Direct high-speed modulation of circular polarization (Pc) of coherent light will open the way for new communication technology and offers the possibility to overcome the main bottleneck of the optical telecommunications. Here, by using spin-orbit torque (SOT) with spin Hall effect to control the spin injector magnetization, we report for the first time to achieve electrical control of the circular polarization of light emitted from a quantum dot based light emitting diode (LED) at room temperature [1]. The circular polarization can be modulated between ±25% at 250K and ±16% at 290K after pulsed current switching injector magnetization. A repetition of more than 60 times do not reveal any degradation at the injector/semiconductor interface. Our achievement will directly contribute the implementation of the new optical telecommunication technology with Pc modulation.
[1] P. A. Dainone, et al. “Controlling the helicity of light by electrical magnetization switching”, Nature, to be published.
The hot carrier dynamics of thermally stable triple halide perovskite solar cells are investigated through power dependent transient absorption (TA) measurements. The TA measurements from both front and back sides of the solar cells were done to better understand the cooling processes. After extracting the PV parameters of the solar cells from the J-V characteristics, the TA measurements were repeated in-operando conditions and under varying external biases to monitor the thermalization of the carriers in more practical conditions.
The PV parameters of triple cation perovskite solar cells are studied focusing on the electro-optical properties and differences in performance at low and high temperatures. A parasitic barrier to carrier extraction at low temperatures causes a loss of performance at T < 200 K. Combined Intensity and temperature dependent measurements suggest that extraction across this parasitic interface is constrained by a combination of the binding energy of the excitons and thermionic emission. However, the performance of the device is restored at low intensity_ where the thermionic extraction rate exceeds the photocarrier generation.
Metal halide perovskites are emerging as an intriguing class of solution-based semiconductors with significant potential for photovoltaics. In this study we investigate the triple halide perovskite (FA,Cs)Pb(I,Br,Cl)3, which is known to be amongst the most stable metal halide perovskite systems available. This stability allows a comprehensive study of the hot carrier dynamics to be assessed under steady-state conditions at high fluence and various temperatures in a device structure.Here, we show measurements support the presence of hot carriers in the device in advance of any negative effects due to halide segregation or decomposition.
Metal-halide perovskites are emerging as an intriguing class of semiconductors with significant potential for photovoltaics. Here, several perovskites are discussed that have been assessed via various experimental techniques to determine the effects of their composition, dimensionality, and structural stability on hot carriers and polaron formation. It will be shown that polarons formed in these systems are strongly affected by the binding energy and nature of the excitons in the materials. Notably, the hot carrier dynamics in perovskites is strongly affected by their low thermal conductivity, which inhibits the dissipation of heat in the material.
Isolating spectral signatures and/or the carrier dynamics that are specific to semiconductor junctions and not just the interface or bulk is challenging. Junctions that form between a semiconductor surface and a contacting layer are the key to their function. Equilibration of chemical potential at such junctions creates an internal electric field and establishes a region where mobile charges are driven away (depletion region). Absorption of light produces electrons and holes within the depletion region where the charges are separated. We developed transient photoreflectance (TPR) as an innovative time-resolved spectroscopic probe that can directly monitor carrier dynamics within and across such junctions. In the TPR method, the change in reflectance (ΔR) of a broadband probe from a specific interface is monitored as a function of pump-probe delay. The spectral nature of the reflected beam provides quantitative information about the built-in field; thus, TPR is a non-contact probe of the electric field at that interface. We applied TPR to study charge transfer at p-type gallium-indium phosphide (p-GaInP2) and n-type gallium-arsenide (n-GaAs) interfaces. We monitored the formation and decay of transient electric fields that form upon photoexcitation within bare p-GaInP2, p-GaInP2/platinum (Pt), and p-GaInP2/amorphous titania (TiO2) interfaces. A field at both the p-GaInP2/Pt and p-GaInP2/TiO2 interfaces forms that drives charge separation, however, recombination at the p-GaInP2/TiO2 interface is significantly reduced compared the p-GaInP2/Pt interface. On the other hand, n-GaAs forms an ohmic contact with TiO2 while only a small field forms at the n- GaAs/NiO interface that promotes hole transfer to nickel oxide (NiO).
PbS and PbSe quantum dots (QDs) are promising strong infrared emitters. We have developed several synthetic routes to producing PbS and PbSe QDs with a variety of sizes such that the bandgap can be continuously tuned from 2000 to 1000 nm. We provide a simple and accurate synthetic route to reproducibly produce PbS QDs with a narrow size-distribution and high chemical yield. The different synthetic routes lead to differences in their surface chemistry and to differences in their air stability and photoluminescence quantum yields (PLQY). To characterize the PLQY we directly measured the PLQY IR-26 (a standard IR emitting organic dye) at a range of concentrations as well as the PLQY of PbS and PbSe QDs for a range of sizes. We find that the PLQY of IR-26 has a weak concentration dependence due to reabsorption, with a PLQY of 0:048_0:002% for low concentrations, lower than previous reports by a full order of magnitude. We also find a dramatic size dependence for both PbS and PbSe QDs, with the smallest dots exhibiting a PLQY in excess of 60% while larger dots fall below 3%. A model, including nonradiative transition between electronic states and energy transfer to ligand vibrations, appears to explain this size dependence. These findings provide both a better characterization of photoluminescence for near infrared emitters. Halogen surface passivation provides both a larger PLQY (~ 30% improvement) as well as increased air stability.
Contrast agents for optical imaging have traditionally been designed for the near-infrared (NIR) spectral range (700-900 nm, Optical Window I) where absorption and scattering of tissue are relatively low. Recently, another window beyond 1000 nm has been discovered known as Optical Window II or the extended Near Infrared (exNIR) with improved transparency. In this work, we present a method to synthesize quantum dots emitting at 1300 nanometers, the optimal wavelength. The quantum dots were synthesized in organic solvents, and a method of transforming them into water is discussed. Optical characterizations including absolute quantum yield and the fluorescence lifetime are presented.
The transient photoconductivity of dye-sensitized nanocrystalline colloidal TiO2 has been measured time-resolved THz spectroscopy (TRTS), a non-contact electrical probe with sub-picosecond temporal resolution. The photoconductivity deviates strongly from Drude behavior and is explained by disorder-induced carrier localization and/or backscattering of the photogenerated carriers. In addition, the carriers are found to thermally equilibrate with the lattice in roughly 300 femtoseconds. The size-dependent photoconductivity of CdSe nanoparticles ranging from 2.54 nm up to >25 nm has also been measured using TRTS. The measured change in the frequency-dependent optical density and change in phase of the transmitted THz pulse fall into three distinct groupings as a function of size and can be classified for diameters smaller than the Bohr exciton radius, diameters greater than the Bohr exciton radius but smaller than the bulk mean free path, and diameters greater than the bulk mean free path. The underlying cause of the grouping is a size-dependent mobility (or carrier scattering rate).
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