During the past decades, HgCdTe photovoltaic infrared focal plane array (PV-IRFPA) imaging technology has been
matured. Now, it develops into the third generation. The detector fabrication process and testing process should be
optimized to get more advanced performance detector. So the means and methods to evaluate the performance of the
detector is especially important. The passivation films on the surface of the detector chip affect the performance of
detector seriously, which is because the band gap of the HgCdTe is rather narrow. So the surface passivation has been
recognized as a crucial step in the fabrication progress of HgCdTe photovoltaic detectors. In this paper, we do the regular
IV test on back-to-back pixels’ p-n junctions, and then we find out that the resistance of the passivation films is much
lower than we thought. So the I-V test on back-to-back p-n junctions may be a quick and easy evaluation method for the
quality of the passivation films.
Time Delay Integration (TDI) is an effective approach for high sensitive infrared detectors. According to the principle of
the TDI, the central distance of pixel along the time delay integral direction is closely linked with the specific application
requirements. So the optimization design, such as the area of pixels and their distance, plays an important role to improve
the performance of TDI detectors. The crosstalk between pixels is a crucial factor that results in the decline of detector
Modulation Transfer Function (MTF), and then affects the imaging quality. In this paper the optimization design rule for
the arrangement of pixel has been investigated. The results show that the main method to appreciate it is reducing the
crosstalk between pixels and enhancing detectivity. Chips of which pixel areas and edge intervals are different but with
same distance were designed for the experiments. The optical and electrical measurements were carried out for these
chips and the optimized structure was obtained. In addition, relationships between the crosstalk and parameters of
material, pixel structure were analyzed based on the experiment data. According to the comprehensive analysis of the
measurement data, we obtained the optimum design for specific HgCdTe TDI infrared detector. Meanwhile it is also a
well reference for other HgCdTe TDI detector structure design.
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