Silicon photonics for telecommunication applications has garnered much attention recently. The optical transparency and the large refractive index contrast of silicon in the telecommunication wavelengths allow the implementation of high-density photonic integrated circuits. The drawback of silicon photonics is that there is no native efficient light source. Integration of III-V material, which offers outstanding optical emission properties, on silicon provides a potential solution. One of the approaches for large-scale integration is through heterogeneous integration of a III-V membrane using adhesive bonding. Here, we will report on the integration of telecom C-band emitting InAs QDs on a silicon platform through such bonding.
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