Dr. Michael E. Adel Profile

Dr. Michael E. Adel

Researcher at KLA Israel

SPIE Involvement:

Author

Publications (32)

Proceedings Article | 30 March 2017 Paper

Paper

Process resilient overlay target designs for advanced memory manufacture

Joonseuk Lee, Mirim Jung, Honggoo Lee, Youngsik Kim, Sangjun Han, Michael Adel, Tal Itzkovich, Vladimir Levinski, Victoria Naipak, Anna Golotsvan, Amnon Manassen, Yuri Paskover, Tom Leviant, Efi Megged, Myungjun Lee, Mark Smith, Do-Hwa Lee, DongSub Choi, Zephyr Liu

Proceedings Volume 10145, 1014524 (2017) https://doi.org/10.1117/12.2258376

KEYWORDS: Overlay metrology, Metrology, Lithography, Manufacturing, Semiconducting wafers, Optical lithography, Polarization, Modulation, Critical dimension metrology, Image segmentation

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Proceedings Article | 28 March 2017 Paper

Paper

Impact of stochastic process variations on overlay mark fidelity "towards the 5nm node"

Michael Adel, Roel Gronheid, Chris Mack, Philippe Leray, Evgeni Gurevich, Bart Baudemprez, Dieter Vandenheuvel, Antonio Mani, Sharon Aharon, Dana Klein, Jungtae Lee, Mark Smith

Proceedings Volume 10145, 1014509 (2017) https://doi.org/10.1117/12.2258353

KEYWORDS: Overlay metrology, Line edge roughness, Lithography, Stochastic processes, Process control, Manufacturing, Semiconducting wafers, Extreme ultraviolet, Statistical analysis, Line width roughness, Extreme ultraviolet lithography, Image segmentation, Scanning electron microscopy

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Proceedings Article | 24 March 2016 Paper

Paper

Overlay metrology performance prediction fidelity: the factors enabling a successful target design cycle

Inna Tarshish-Shapir, Eitan Hajaj, Greg Gray, Jeffery Hodges, Jianming Zhou, Sarah Wu, Sam Moore, Guy Ben-Dov, Chen Dror, Ze'ev Lindenfeld, David Gready, Mark Ghinovker, Mike Adel

Proceedings Volume 9778, 97782J (2016) https://doi.org/10.1117/12.2219181

KEYWORDS: Metrology, Overlay metrology, Electromagnetic simulation, Reflectivity, Diffraction, Semiconducting wafers, Inspection, Scatterometry, Polarization, Device simulation, Interference (communication), Optical design, Light sources

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Proceedings Article | 24 March 2016 Paper

Paper

Lithography aware overlay metrology target design method

Myungjun Lee, Mark Smith, Joonseuk Lee, Mirim Jung, Honggoo Lee, Youngsik Kim, Sangjun Han, Michael Adel, Kangsan Lee, Dohwa Lee, Dongsub Choi, Zephyr Liu, Tal Itzkovich, Vladimir Levinski, Ady Levy

Proceedings Volume 9778, 97781L (2016) https://doi.org/10.1117/12.2218653

KEYWORDS: Overlay metrology, Metrology, Lithography, Scanners, Lithographic illumination, Personal protective equipment, Optical lithography, Resolution enhancement technologies, Optical proximity correction, Photomasks, SRAF

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Proceedings Article | 24 March 2016 Paper

Paper

Root cause analysis of overlay metrology excursions with scatterometry overlay technology (SCOL)

Karsten Gutjahr, Dongsuk Park, Yue Zhou, Winston Cho, Ki Cheol Ahn, Patrick Snow, Richard McGowan, Tal Marciano, Vidya Ramanathan, Pedro Herrera, Tal Itzkovich, Janay Camp, Michael Adel

Proceedings Volume 9778, 97781M (2016) https://doi.org/10.1117/12.2219668

KEYWORDS: Overlay metrology, Semiconducting wafers, Scatterometry, Diffractive optical elements, Metrology, Photovoltaics, Etching, Detection and tracking algorithms, Signal processing, Optical properties

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Proceedings Article | 8 March 2016 Paper

Paper

Metrology target design simulations for accurate and robust scatterometry overlay measurements

Guy Ben-Dov, Inna Tarshish-Shapir, David Gready, Mark Ghinovker, Mike Adel, Eitan Herzel, Soonho Oh, DongSub Choi, Sang Hyun Han, Mohamed El Kodadi, Chan Hwang, Jeongjin Lee, Seung Yoon Lee, Kuntack Lee

Proceedings Volume 9778, 97783B (2016) https://doi.org/10.1117/12.2219108

KEYWORDS: Overlay metrology, Metrology, Critical dimension metrology, Scatterometry, Optical testing, Image processing, Scatter measurement, Optical metrology, Diffraction gratings, Diffraction, Semiconducting wafers, Wafer testing, Device simulation

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Proceedings Article | 8 March 2016 Paper

Paper

Metrology target design (MTD) solution for diagonally orientated DRAM layer

Myungjun Lee, Mark Smith, Michael Adel, Chia-Hung Chen, Chin-Chang Huang, Hao-Lun Huang, Hsueh-Jen Tsai, I-Lin Wang, Jen-Chou Huang, Jo-Lan Chin, Kuo-Yao Chou, Yuan-Ku Lan, Hsien-Yen Lung, Jui-Chin Yang, Tal Itzkovich, Healthy Huang, Yaniv Abramovitz, Jinyan Song, Chen Dror, Harvey Cheng, Ady Levy

Proceedings Volume 9778, 97782R (2016) https://doi.org/10.1117/12.2218659

KEYWORDS: Personal protective equipment, Metrology, Lithography, Overlay metrology, Photomasks, Scanners, Lithographic illumination, SRAF, Neodymium, Optical proximity correction

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Proceedings Article | 10 April 2015 Paper

Paper

Stack and topography verification as an enabler for computational metrology target design

Michael Adel, Inna Tarshish-Shapir, David Gready, Mark Ghinovker, Chen Dror, Stephane Godny

Proceedings Volume 9424, 94240D (2015) https://doi.org/10.1117/12.2086084

KEYWORDS: Metrology, Scanning electron microscopy, Diffraction gratings, Overlay metrology, Uncertainty analysis, Performance modeling, Diffraction, Scatterometry, Critical dimension metrology, Image processing

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Proceedings Article | 23 March 2009 Paper

Paper

Overlay metrology for double patterning processes

Philippe Leray, Shaunee Cheng, David Laidler, Daniel Kandel, Mike Adel, Berta Dinu, Marco Polli, Mauro Vasconi, Bartlomiej Salski

Proceedings Volume 7272, 72720G (2009) https://doi.org/10.1117/12.814182

KEYWORDS: Overlay metrology, Double patterning technology, Semiconducting wafers, Diffraction, Scanners, Calibration, Metrology, Diffraction gratings, Spectroscopy, Polarizers

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The double patterning (DPT) process is foreseen by the industry to be the main solution for the 32 nm technology node and even beyond. Meanwhile process compatibility has to be maintained and the performance of overlay metrology has to improve. To achieve this for Image Based Overlay (IBO), usually the optics of overlay tools are improved. It was also demonstrated that these requirements are achievable with a Diffraction Based Overlay (DBO) technique named SCOL^TM [1]. In addition, we believe that overlay measurements with respect to a reference grid are required to achieve the required overlay control [2]. This induces at least a three-fold increase in the number of measurements (2 for double patterned layers to the reference grid and 1 between the double patterned layers). The requirements of process compatibility, enhanced performance and large number of measurements make the choice of overlay metrology for DPT very challenging. In this work we use different flavors of the standard overlay metrology technique (IBO) as well as the new technique (SCOL) to address these three requirements. The compatibility of the corresponding overlay targets with double patterning processes (Litho-Etch-Litho-Etch (LELE); Litho-Freeze-Litho-Etch (LFLE), Spacer defined) is tested. The process impact on different target types is discussed (CD bias LELE, Contrast for LFLE). We compare the standard imaging overlay metrology with non-standard imaging techniques dedicated to double patterning processes (multilayer imaging targets allowing one overlay target instead of three, very small imaging targets). In addition to standard designs already discussed [1], we investigate SCOL target designs specific to double patterning processes. The feedback to the scanner is determined using the different techniques. The final overlay results obtained are compared accordingly. We conclude with the pros and cons of each technique and suggest the optimal metrology strategy for overlay control in double patterning processes.

Proceedings Article | 4 December 2008 Paper

Paper

An update on the DPL overlay discontinuity

Mike Adel

Proceedings Volume 7140, 71400K (2008) https://doi.org/10.1117/12.808005

KEYWORDS: Overlay metrology, Scatterometry, Metrology, Double patterning technology, Lithography, Diamond, Contamination, Logic, Signal processing, Signal detection

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Proceedings Article | 22 March 2008 Paper

Paper

Diffraction based overlay metrology: accuracy and performance on front end stack

Philippe Leray, Shaunee Cheng, Daniel Kandel, Michael Adel, Anat Marchelli, Irina Vakshtein, Mauro Vasconi, Bartlomiej Salski

Proceedings Volume 6922, 69220O (2008) https://doi.org/10.1117/12.772516

KEYWORDS: Overlay metrology, Scatterometry, Semiconducting wafers, Diffraction, Chemical mechanical planarization, Silicon, Etching, Metrology, Scanners, Detection and tracking algorithms

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Proceedings Article | 14 March 2008 Paper

Paper

Diffraction order control in overlay metrology: a review of the roadmap options

Mike Adel, Daniel Kandel, Vladimir Levinski, Joel Seligson, Alex Kuniavsky

Proceedings Volume 6922, 692202 (2008) https://doi.org/10.1117/12.773243

KEYWORDS: Scatterometry, Overlay metrology, Metrology, Diffraction, Imaging systems, Detection and tracking algorithms, Spectroscopy, Optical lithography, Sensors, Image processing

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Proceedings Article | 27 November 2007 Paper

Paper

The challenges of transitioning from linear to high-order overlay control in advanced lithography

M. Adel, P. Izikson, D. Tien, C. K. Huang, J. C. Robinson, B. Eichelberger

Proceedings Volume 6827, 682722 (2007) https://doi.org/10.1117/12.778457

KEYWORDS: Data modeling, Semiconducting wafers, Overlay metrology, Scanners, Reticles, Lithography, Metrology, Optimization (mathematics), Statistical modeling, Source mask optimization

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Proceedings Article | 18 June 2007 Paper

Paper

Differential signal scatterometry overlay metrology: an accuracy investigation

Daniel Kandel, Mike Adel, Berta Dinu, Boris Golovanevsky, Pavel Izikson, Vladimir Levinski, Irina Vakshtein, Philippe Leray, Mauro Vasconi, Bartlomiej Salski

Proceedings Volume 6616, 66160H (2007) https://doi.org/10.1117/12.725929

KEYWORDS: Overlay metrology, Scatterometry, Semiconducting wafers, Detection and tracking algorithms, Computer simulations, Silicon, Standards development, Electromagnetism, Metrology, Algorithms

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Proceedings Article | 5 April 2007 Paper

Paper

Improved overlay control through automated high order compensation

S. Wakamoto, Y. Ishii, K. Yasukawa, A. Sukegawa, S. Maejima, A. Kato, J. Robinson, B. Eichelberger, P. Izikson, M. Adel

Proceedings Volume 6518, 65180J (2007) https://doi.org/10.1117/12.712710

KEYWORDS: Scanners, Distortion, Databases, Semiconducting wafers, Overlay metrology, Reticles, Control systems, Optical alignment, Lithography, Error analysis

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Proceedings Article | 5 April 2007 Paper

Paper

45nm design rule in-die overlay metrology on immersion lithography processes

Yu-Hao Shih, George KC Huang, Chun-Chi Yu, Mike Adel, Chin-Chou Kevin Huang, Pavel Izikson, Elyakim Kassel, Sameer Mathur, Chien-Jen Huang, David Tien, Yosef Avrahamov

Proceedings Volume 6518, 651831 (2007) https://doi.org/10.1117/12.711754

KEYWORDS: Overlay metrology, Metrology, Semiconducting wafers, Scanners, Immersion lithography, Statistical modeling, Optical lithography, Data modeling, Optical alignment, Reticles

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Proceedings Article | 24 March 2006 Paper

Paper

In-field overlay uncertainty contributors: a back end study

Mike Adel, Aviv Frommer, Elyakim Kassel, Pavel Izikson, Philippe Leray, Bernd Schulz, Rolf Seltmann, Jens Busch

Proceedings Volume 6152, 615213 (2006) https://doi.org/10.1117/12.656467

KEYWORDS: Reticles, Overlay metrology, Scanners, Data modeling, Semiconducting wafers, Metrology, Chemical mechanical planarization, Manufacturing, Polishing, Optical alignment

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Proceedings Article | 24 March 2006 Paper

Paper

Imaging simulations of optimized overlay marks with deep sub-resolution features

Daniel Kandel, Michael Adel, Aviv Frommer, Vladimir Levinski, Alexandra Rapoport, Richard Silver

Proceedings Volume 6152, 61522X (2006) https://doi.org/10.1117/12.656494

KEYWORDS: Overlay metrology, Oxides, Metrology, Silicon, Image analysis, Finite-difference time-domain method, Lithography, Process control, Electromagnetic simulation, Imaging systems

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Proceedings Article | 10 May 2005 Paper

Paper

In field overlay uncertainty contributors

Aviv Frommer, Elyakim Kassel, Pavel Izikson, Mike Adel, Philippe Leray, Bernd Schulz

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.599397

KEYWORDS: Reticles, Overlay metrology, Semiconducting wafers, Scanners, Dysprosium, Metrology, Data modeling, Personal protective equipment, Lithography, Manufacturing

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Proceedings Article | 24 May 2004 Paper

Paper

Test of a new sub-90-nm DR overlay mark for DRAM production

Stefan Gruss, Ansgar Teipel, Carsten Fuelber, Elyakim Kassel, Mike Adel, Mark Ghinovker, Pavel Izikson

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.534518

KEYWORDS: Overlay metrology, Aluminum, Carbon, Photomasks, Semiconducting wafers, Metrology, Error analysis, Etching, Metals, Reticles

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Proceedings Article | 24 May 2004 Paper

Paper

A comparison of methods for in-chip overlay control at the 65-nm node

John Robinson, Mark Stakely, Jorge Poplawski, Pavel Izikson, Elyakim Kassel, Mike Adel

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.534510

KEYWORDS: Overlay metrology, Metrology, Scanners, Error analysis, Reticles, Semiconducting wafers, Personal protective equipment, Lithography, Data modeling, Data acquisition

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Proceedings Article | 24 May 2004 Paper

Paper

Target noise in overlay metrology

Joel Seligson, Mike Adel, Pavel Izikson, Vladimir Levinski, Dan Yaffe

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.534515

KEYWORDS: Overlay metrology, Aluminum, Reticles, Scanners, Metrology, Back end of line, Metals, Semiconducting wafers, Copper, Diagnostics

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Proceedings Article | 24 May 2004 Paper

Paper

Improved overlay metrology device correlation on 90-nm logic processes

Atsushi Ueno, Kouichirou Tsujita, Hiroyuki Kurita, Yasuhisa Iwata, Mark Ghinovker, Jorge Poplawski, Elyakim Kassel, Mike Adel

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.534522

KEYWORDS: Overlay metrology, Personal protective equipment, Scanning electron microscopy, Metrology, Scanners, Lithography, Optical design, Metals, Semiconducting wafers, Monochromatic aberrations

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Proceedings Article | 2 June 2003 Paper

Paper

Performance study of new segmented overlay marks for advanced wafer processing

Mike Adel, John Allgair, David Benoit, Mark Ghinovker, Elyakim Kassel, C. Nelson, John Robinson, Gary Seligman

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.483477

KEYWORDS: Overlay metrology, Semiconducting wafers, Metrology, Optical design, Data modeling, Lithography, Metals, Image segmentation, Optical lithography, Imaging metrology

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Proceedings Article | 2 June 2003 Paper

Paper

Overlay metrology simulations: analytical and experimental validations

Joel Seligson, Boris Golovanevsky, Jorge Poplawski, Michael Adel, Richard Silver

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.483661

KEYWORDS: Semiconducting wafers, Overlay metrology, Metrology, Monte Carlo methods, Silicon, Diffraction, Wafer-level optics, Standards development, Electromagnetism, Optical testing

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Proceedings Article | 2 June 2003 Paper

Paper

Characterization of overlay mark fidelity

Mike Adel, Mark Ghinovker, Jorge Poplawski, Elyakim Kassel, Pavel Izikson, Ivan Pollentier, Philippe Leray, David Laidler

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.483430

KEYWORDS: Overlay metrology, Semiconducting wafers, Reticles, Chemical mechanical planarization, Statistical analysis, Error analysis, Silicon, Manufacturing, Optical lithography, Metrology

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In this publication we introduce a new metric for process robustness of overlay metrology in microelectronic manufacturing. By straightforward statistical analysis of overlay metrology measurements on an array of adjacent, nominally identical overlay targets the Overlay Mark Fidelity (OMF) can be estimated. We present the results of such measurements and analysis on various marks, which were patterned using a DUV scanner. The same reticle set was used to pattern wafers on different process layers and process conditions. By appropriate statistical analysis, the breakdown of the total OMF into a reticle-induced OMF component and a process induced OMF component was facilitated. We compare the OMF of traditional box-in-box overlay marks with that of new gratingbased overlay marks and show that in all cases the grating marks are superior. The reticle related OMF showed an improvement of 30 % when using the new grating-based overlay mark. Furthermore, in a series of wafers run through an STI-process with different Chemical Mechanical Polish (CMP) times, the random component of the OMF of the new grating-based overlay mark was observed to be 40% lower and 50% less sensitive to process variation compared with Box in Box marks. These two observations are interpreted as improved process robustness of the grating mark over box in box, specifically in terms of reduced site by site variations and reduced wafer to wafer variations as process conditions change over time. Overlay Mark Fidelity, as defined in this publication, is a source of overlay metrology uncertainty, which is statistically independent of the standard error contributors, i.e. precision, TIS variability, and tool to tool matching. Current overlay metrology budgeting practices do not take this into consideration when calculating total measurement uncertainty (TMU). It is proposed that this be reconsidered, given the tightness of overlay and overlay metrology budgets at the 70 nm design rule node and below.

Proceedings Article | 9 June 1998 Paper

Paper

New compact-design interferometer-based spectral imaging system for biomedical applications

Mosik Lavi, Uri Milman, Dario Cabib, Yuval Garini, Amir Gil, Ton Juta, Michael Adel

Proceedings Volume 3261, (1998) https://doi.org/10.1117/12.310567

KEYWORDS: Imaging spectroscopy, Interferometers, Imaging systems, Spectral resolution, Sagnac interferometers, Image enhancement, Optical components, Charge-coupled devices, Interferometry, Remote sensing

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Proceedings Article | 16 September 1994 Paper

Paper

True wafer temperature during metallization in physical vapor deposition cluster tools

Michael Adel, Shmuel Mangan, Howard Grunes, Vijay Parkhe

Proceedings Volume 2336, (1994) https://doi.org/10.1117/12.186796

KEYWORDS: Semiconducting wafers, Temperature metrology, Silicon, Plasma, Aluminum, Reflectivity, Physical vapor deposition, Tin, Pyrometry, Oxides

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Proceedings Article | 15 February 1994 Paper

Paper

Emissivity compensated radiance-contrast-tracking pyrometry for semiconductor processing

Michael Adel, Shmuel Mangan, Yaron Ish-Shalom

Proceedings Volume 2091, (1994) https://doi.org/10.1117/12.167353

KEYWORDS: Semiconducting wafers, Pyrometry, Temperature metrology, Error analysis, Wafer-level optics, Semiconductor manufacturing, Sensors, Reflectivity, Black bodies, Absorption

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Proceedings Article | 16 April 1993 Paper

Paper

Noncontact temperature monitoring of semiconductors by optical absorption edge sensing

Michael Adel, Yaron Ish-Shalom, Shmuel Mangan, Dario Cabib, Haim Gilboa

Proceedings Volume 1803, (1993) https://doi.org/10.1117/12.142924

KEYWORDS: Semiconducting wafers, Absorption, Temperature metrology, Reflection, Semiconductors, Wafer-level optics, Reflectance spectroscopy, Reflectivity, Databases, Plasma etching

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Proceedings Article | 1 April 1991 Paper

Paper

Laser boresighting by second-harmonic generation

Michael Adel, Robert Buckwald, Dario Cabib

Proceedings Volume 1442, (1991) https://doi.org/10.1117/12.49052

KEYWORDS: Crystals, Laser crystals, Second-harmonic generation, Collimators, Optical engineering, Visualization, Laser damage threshold, Crystal optics, Ferroelectric materials, Pulsed laser operation

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Proceedings Article | 1 November 1990 Paper

Paper

Boresighting of laser range finder or designator systems with and without laser/FLIR synchronization

Arnold Daniels, Michael Adel, Dario Cabib, Mosik Lavi, Robert Buckwald

Proceedings Volume 1341, (1990) https://doi.org/10.1117/12.23086

KEYWORDS: Forward looking infrared, Infrared technology, Laser range finders, Thermography, Infrared radiation, Laser energy, Collimators, Pulsed laser operation, Laser induced damage, Coating

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Showing 5 of 32 publications

Conference Committee Involvement (1)

Metrology, Inspection, and Process Control for Microlithography XXIII

23 February 2009 | San Jose, California, United States

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