Mr. Michael J. Cangemi Profile

Michael J. Cangemi

at Corning Tropel Corp

SPIE Involvement:

Author

Publications (21)

Proceedings Article | 11 May 2017 Presentation + Paper

Characterization of reactive plasma ion assisted HfO2 films for low loss optical coatings in the DUV and MWIR

Jue Wang, Michael Cangemi, Christopher Chinhong, Michael D'lallo, Jim Platten, Jean Francois Oudard, Leonard Wamboldt

Proceedings Volume 10181, 101810P (2017) https://doi.org/10.1117/12.2271889

KEYWORDS: Deep ultraviolet, Plasma, Ions, Mid-IR, Absorption, Optical properties, Optical coatings, Thin films, Refractive index, Hafnium, Hybrid fiber optics, Surface roughness, Reflectivity

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Proceedings Article | 20 October 2006 Paper

Improved prediction of across chip linewidth variation (ACLV) with photomask aerial image CD metrology

Eric Poortinga, Axel Zibold, Will Conley, Lloyd Litt, Bryan Kasprowicz, Michael Cangemi

Proceedings Volume 6349, 63490N (2006) https://doi.org/10.1117/12.686449

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Metrology, Scanners, Photoresist processing, Data acquisition, Lithography, Image acquisition, Manufacturing

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Critical dimension (CD) metrology is an important process step within the wafer fab. Knowledge of the CD values at resist level provides a reliable mechanism for the prediction of device performance. Ultimately tolerances of device electrical performance drive the wafer linewidth specifications of the lithography group. Staying within this budget is influenced mainly by the scanner settings, resist process and photomask quality. At the 65nm node the ITRS roadmap calls for sub-3nm photomask CD uniformity to support a sub-3nm wafer level CD uniformity. Meeting these targets has proven to be a challenge. What can be inferred from these specifications is that photomask level CD performance is the direct contributor to wafer level CD performance. With respect to phase shift masks, criteria such as phase and transmission control are also tightened with each technology node. A comprehensive study is presented supporting the use of photomask aerial image emulation CD metrology to predict wafer level Across Chip Linewidth Variation (ACLV). Using the aerial image can provide more accurate wafer level prediction because it inherently includes all contributors to image formation such as the physical CD, phase, transmission, sidewall angle, and other material properties. Aerial images from different photomask types were captured to provide across chip CD values. Aerial image measurements were completed using an AIMS^TMfab193i with its through-pellicle data acquisition capability including the Global CDU Map^TM software option for AIMS^TM tools. The through-pellicle data acquisition capability is an essential prerequisite for capturing final CD data (after final clean and pellicle mounting) before the photomask ships or for re-qualification at the wafer fab. Data was also collected on these photomasks using a conventional CD-SEM metrology system with the pellicles removed. A comparison was then made to wafer prints demonstrating the benefit of using aerial image CD metrology.

Proceedings Article | 20 October 2006 Paper

Feasibility study of embedded binary masks

Michael Cangemi, Vicky Philipsen, Leonardus Leunissen, Darren Taylor

Proceedings Volume 6349, 63490L (2006) https://doi.org/10.1117/12.686290

KEYWORDS: Photomasks, Electron beam melting, Binary data, Diffraction, Nanoimprint lithography, Polarization, Lithography, Manufacturing, Resolution enhancement technologies, Semiconducting wafers

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Proceedings Article | 21 June 2006 Paper

Manufacturability and printability of AAPSM with transparent etch stop layer

Michael Cangemi, Vicky Philipsen, Rudi De Ruyter, Leonardus Leunissen, Nicolo Morgana, Pierre Sixt, Marc Cangemi, Rand Cottle, Bryan Kasprowicz

Proceedings Volume 6281, 62810T (2006) https://doi.org/10.1117/12.692803

KEYWORDS: Etching, Quartz, Photomasks, Semiconducting wafers, Polarization, Manufacturing, Chromium, Reticles, Lithography, Phase shifts

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Phase-shift mask (PSM) technology in combination with 193nm illumination remains a viable option for high contrast imaging towards 45nm half-pitch applications. The advent of hyper NA (immersion) lithography increases the imaging sensitivity towards the photomask properties, such as mask-induced polarization. In addition, the use of PSM technology implies taking into account the inherent photomask topography effects for a balanced through pitch imaging. A good quartz etch depth control of +/-1^o through pitch is required for optimized wafer imaging [1]. Therefore, a new PSM material stack was proposed based on a transparent etch stop layer (TESL) in order to meet the stringent phase depth requirements beyond 65nm half-pitch [2]. This extra layer allows over-etching of the quartz, resulting in a good etch depth linearity and uniformity. This study examines the manufacturability and printability of TESL-based masks. We examine the effect of an improved quartz etch depth linearity on the through-pitch process windows for a TESL-based alternating aperture (AA)PSM. Moreover, due to the different stack of photomask material compared to a classical photomask blank, the impact on printability is investigated by simulations, AIMS and wafer imaging. The image imbalance compensation by trench biasing needs to be optimized for through-pitch process windows. The actual depth and line width of the structures is systematically probed within the photomask field. Based on photomask metrology data, rigorous electro-magnetic field simulations are compared to wafer prints, obtained on an ASML XT1250Di ArF immersion scanner working with a 0.85NA projection lens and to AIMS results from Zeiss AIMS fab 193i. Furthermore, feature sizes on the order of the lithography wavelength induce photomask polarization effects in the imaging path [3]. The degree of polarization is compared to the polarization behavior of a conventional PSM. In summary, this study assesses the capability of TESL PSM towards the 65nm node through-pitch imaging.

Proceedings Article | 21 June 2006 Paper

Polarization effects: EAPSM vs. TT EAPSM

Nicoló Morgana, Will Conley, Michael Cangemi, Marc Cangemi, Bryan Kasprowicz

Proceedings Volume 6281, 628109 (2006) https://doi.org/10.1117/12.692729

KEYWORDS: Photomasks, Polarization, Etching, Manufacturing, Lithography, Optical lithography, Plasma etching, Plasma, Semiconducting wafers, Chromium

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Proceedings Article | 21 March 2006 Paper

Mask substrate birefringence requirements for hyper-NA lithography

Mark van de Kerkhof, Wim de Boeij, Marcel Demarteau, Bernd Geh, Leonardus Leunissen, Patrick Martin, Mike Cangemi

Proceedings Volume 6154, 615444 (2006) https://doi.org/10.1117/12.659057

KEYWORDS: Birefringence, Photomasks, Reticles, Polarization, Critical dimension metrology, Lithography, Optical lithography, Fiber optic illuminators, Pellicles, Wave plates

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Proceedings Article | 21 March 2006 Paper

High transmission mask technology for 45nm node imaging

Will Conley, Nicoló Morgana, Bryan Kasprowicz, Mike Cangemi, Matt Lassiter, Lloyd Litt, Marc Cangemi, Rand Cottle, Wei Wu, Jonathan Cobb, Young-Mog Ham, Kevin Lucas, Bernie Roman, Chris Progler

Proceedings Volume 6154, 615411 (2006) https://doi.org/10.1117/12.659353

KEYWORDS: Photomasks, Polarization, Etching, Plasma etching, Manufacturing, Plasma, Semiconducting wafers, Chromium, Lithography, Chlorine

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Proceedings Article | 15 March 2006 Paper

High transmission mask technology for 45nm node imaging

Will Conley, Nicoló Morgana, Bryan Kasprowicz, Mike Cangemi, Matt Lassiter, Lloyd Litt, Marc Cangemi, Rand Cottle, Wei Wu, Jonathan Cobb, Young-Mog Ham, Kevin Lucas, Bernie Roman, Chris Progler

Proceedings Volume 6154, 61541D (2006) https://doi.org/10.1117/12.659390

KEYWORDS: Photomasks, Polarization, Etching, Plasma etching, Manufacturing, Plasma, Semiconducting wafers, Chromium, Lithography, Chlorine

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Proceedings Article | 15 March 2006 Paper

EMF simulation with DDM to enable EAPSM masks in 45-nm manufacturing

Patrick Martin, C. Progler, Michael Cangemi, Kostas Adam, George Bailey, Pat LaCour

Proceedings Volume 6154, 61541G (2006) https://doi.org/10.1117/12.659487

KEYWORDS: SRAF, Polarization, Photomasks, Data modeling, Optical proximity correction, Refractive index, Manufacturing, System on a chip, Critical dimension metrology, Resolution enhancement technologies

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Proceedings Article | 15 March 2006 Paper

Optical properties and process impacts of high transmission EAPSM

Young Mog Ham, Nicolo Morgana, Pierre Sixt, Mike Cangemi, Bryan Kasprowicz, Chris Progler, Pat Martin

Proceedings Volume 6154, 615413 (2006) https://doi.org/10.1117/12.659238

KEYWORDS: Photomasks, Critical dimension metrology, Optical proximity correction, Semiconducting wafers, Lithography, Chromium, Polarization, Image processing, SRAF, Resolution enhancement technologies

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Proceedings Article | 28 June 2005 Paper

Through-pitch characterization and printability for 65nm half-pitch alternating aperture phase shift applications

Vicky Philipsen, Leonardus Leunissen, Rudi De Ruyter, Rik Jonckheere, Patrick Martin, Clare Wakefield, Stephen Johnson, Michael Cangemi, Alex Buxbaum, Troy Morrison

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617438

KEYWORDS: Etching, Photomasks, Quartz, Semiconducting wafers, Phase shifts, Chromium, Wet etching, Dry etching, Metrology, Chemistry

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Alternating aperture phase shift masks (AAPSM) continue to offer high contrast imaging for 65nm half-pitch using conventional 193nm illumination. The transition to high NA lithography systems including immersion lithography, and the ever-decreasing feature sizes have made the topography of the photomask a significant issue in the final resist image. Therefore, the influence of the alternating phase shift depth, the trench profile, and the critical dimension control through variable feature width must be considered and understood for optimized wafer imaging. This paper will examine the impact on imaging based on three photomasks, each employing different quartz etch chemistries. The three methods used to define the well structures include two all dry and a partial wet etch approach. As the photomask features continue to decrease, slight changes in the quartz etched trench profile and depth can severely affect the wafer prints, as the effective 180 degree phase shift for imaging is not achieved. In this work we correlate the imaging performance through pitch to a systematic evaluation of the photomask topography using complementary photomask metrology techniques. The actual depth and profile of the structures is obtained on a FEI Stylus nano-profilometer (SNP-XT) and from destructive cross sections. The CD linearity is measured on a top-down reticle CD SEM (KLA 8100XR). Based on photomask metrology data, rigorous electro-magnetic field (EMF) simulations of the various topographic profiles are performed. As a first printing performance estimate the photomasks are evaluated on a Zeiss AIMSfab193. Comparisons between the different evaluations will be made against wafer prints, obtained on an ASML PAS5500/1100 ArF scanner working with a 0.75NA projection lens. This study will lead to an understanding of the impact of possible limitations of the current quartz etching processes on the imaging performance of alternating phase-shift masks for 65nm half-pitch.

Proceedings Article | 12 May 2005 Paper

High transmission mask technology for 45nm node imaging

Will Conley, Mike Cangemi, Bryan Kasprowicz, Matt Lassiter, Lloyd Litt, Marc Cangemi, Rand Cottle, Mark Smith, Wei Wu, Jonathan Cobb, Rusty Carter, Young-mog Ham, Kevin Lucas, Bernie Roman, Chris Progler

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.601584

KEYWORDS: Photomasks, Image processing, Manufacturing, Image transmission, Lithography, Photoresist materials, Nanoimprint lithography, Image resolution, Semiconductors, 193nm lithography

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Proceedings Article | 12 May 2005 Paper

Tunable transmission phase mask options for 65/45nm node gate and contact processing

Bryan Kasprowicz, Will Conley, Young-Mog Ham, Michael Cangemi, Nicolo Morgana, Marc Cangemi, Rand Cottle, Christopher Progler, Wei Wu, Lloyd Litt, Jonathan Cobb, Bernie Roman

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.601011

KEYWORDS: Photomasks, Manufacturing, Etching, Plasma etching, Lithography, Chromium, Phase shifts, Reticles, Semiconducting wafers, Sputter deposition

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Proceedings Article | 6 December 2004 Paper

AAPSM repair utilizing transparent etch stop layer

Darren Taylor, Michael Cangemi, Matthew Lassiter, Marc Cangemi, Eric Poortinga

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.566596

KEYWORDS: Etching, Quartz, Photomasks, Manufacturing, Inspection, Phase shifts, Lithography, Software development, Binary data, Scanning electron microscopy

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Proceedings Article | 2 June 2004 Paper

Implementation of a transparent etch stop layer for an improved alternating PSM

Michael Cangemi, Darren Taylor, Matthew Lassiter

Proceedings Volume 5504, (2004) https://doi.org/10.1117/12.568018

KEYWORDS: Etching, Quartz, Manufacturing, Phase shifts, Silica, Photomasks, Standards development, Resolution enhancement technologies, Optics manufacturing, Fluorine

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Proceedings Article | 17 December 2003 Paper

193-nm EAPSM inspection comparison: commercial versus alternative absorber material

Darren Taylor, Matthew Lassiter, Michael Cangemi

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518069

KEYWORDS: Inspection, Phase shifts, Photomasks, Manufacturing, Optical properties, Semiconducting wafers, Reticles, Inspection equipment, Etching, Lithography

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Proceedings Article | 17 December 2003 Paper

Improved phase uniformity control using a new AAPSM etch stop layer technique

Matthew Lassiter, Michael Cangemi, Darren Taylor

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518130

KEYWORDS: Etching, Silica, Phase shifts, Quartz, Photomasks, Refraction, Fluorine, Chemistry, Glasses, Aluminum

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Proceedings Article | 17 December 2003 Paper

Comparisons of 9% versus 6% transmission attenuated phase-shift mask for the 65-nm device mode

Patrick Montgomery, Kevin Lucas, Lloyd Litt, Will Conley, Eric Fanucchi, Johannes Van Wingerden, Geert Vandenberghe, Vincent Wiaux, Darren Taylor, Michael Cangemi, Bryan Kasprowicz

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518022

KEYWORDS: Photomasks, Inspection, Printing, Reticles, Critical dimension metrology, Optical lithography, Manufacturing, Metals, 193nm lithography, Nanoimprint lithography

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Proceedings Article | 5 July 2000 Paper

Properties and potential of VUV lithographic thin film materials

Michael Cangemi, Matthew Lassiter, Anatoly Bourov, Bruce Smith

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.388995

KEYWORDS: Vacuum ultraviolet, Thin films, Optical coatings, Chromium, Lithography, Metals, Binary data, Absorption, Autoregressive models, Refraction

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Proceedings Article | 30 December 1999 Paper

Masking materials for 157-nm lithography

Bruce Smith, Anatoly Bourov, Matthew Lassiter, Michael Cangemi

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373337

KEYWORDS: Chromium, Thin films, Reflection, Photomasks, Vacuum ultraviolet, Binary data, Phase shifts, Silicon films, Refractive index, Lithography

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Proceedings Article | 25 June 1999 Paper

Design and development of thin film materials for 157-nm and VUV wavelengths: APSM, binary masking, and optical coatings applications

Bruce Smith, Anatoly Bourov, Lena Zavyalova, Michael Cangemi

Proceedings Volume 3676, (1999) https://doi.org/10.1117/12.351108

KEYWORDS: Thin films, Chromium, Dielectrics, Optical coatings, Vacuum ultraviolet, Reflectivity, Optical properties, Silicon, Silica, Refractive index

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Showing 5 of 21 publications

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