Dr. Michael E. Levinshtein Profile

Dr. Michael E. Levinshtein

at Ioffe Institute

SPIE Involvement:

Author

Publications (4)

Proceedings Article | 22 June 2007 Paper

Generation-recombination noise in forward-biased 4H-SiC p-n diode

Sergey Rumyantsev, Alexander Dmitriev, Michael Levinshtein, Dmitri Veksler, Michael Shur, John Palmour, Mrinal Das, Brett Hull

Proceedings Volume 6600, 66001J (2007) https://doi.org/10.1117/12.723444

KEYWORDS: Diodes, Silicon carbide, Doping, Systems modeling, Diffusion, Transistors, Microwave radiation, Semiconductors, Data modeling, Resistors

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Proceedings Article | 25 May 2004 Paper

Low frequency noise in 4H-SiC BJTs

Sergey Rumyantsev, Michael Levinshtein, Anant Agarwal, John Palmour

Proceedings Volume 5470, (2004) https://doi.org/10.1117/12.546075

KEYWORDS: Silicon carbide, Resistance, Silicon, Transistors, Diodes, Oscillators, Microwave radiation, Optical communications, Telecommunications, Etching

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Proceedings Article | 11 June 2003 Paper

Origin of the 1/f noise in GaN-based HFETs: Is it tunneling?

Michael Levinshtein

Proceedings Volume 5023, (2003) https://doi.org/10.1117/12.514280

KEYWORDS: Gallium nitride, Information operations, Heterojunctions, Field effect transistors, Semiconductors, Silicon, Transistors, Metalorganic chemical vapor deposition, Semiconducting wafers, Microwave radiation

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Proceedings Article | 12 May 2003 Paper

Generation-recombination noise in GaN and GaN-based devices

Nezih Pala, Sergey Rumyantsev, Michael Shur, Michael Levinshtein, M. Asif Khan, Grigory Simin, Remis Gaska

Proceedings Volume 5113, (2003) https://doi.org/10.1117/12.488468

KEYWORDS: Gallium nitride, Field effect transistors, Heterojunctions, Thin films, Gallium, Aluminum, Diodes, Temperature metrology, Silicon, Photodetectors

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