Ms. Michaela Grosser Profile

Michaela Grosser

Ph.D. Student at Univ des Saarlandes

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Proceedings Article | 19 May 2009 Paper

Electrical and mechanical characterization of low temperature co-fired ceramics for high temperature sensor applications

C. Bienert, A. Roosen, M. Grosser, M. Ziegler, U. Schmid

Proceedings Volume 7362, 73620V (2009) https://doi.org/10.1117/12.822665

KEYWORDS: Glasses, Crystals, Ceramics, Composites, Temperature metrology, Chemical analysis, Oxides, Corundum, Silver, X-rays

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To make use of metals with improved conductivity like Ag, AgPd, Au or Cu for metallization pastes in ceramic multilayer technology, Low-Temperature Co-fired Ceramics (LTCC) are densified at temperatures below 900°C. The densification mechanism can be attributed to viscous sintering in combination with the crystallization of the glass matrix. Lifetime prediction and extension of the application range to elevated temperatures strongly depend on the transition range of the remaining amorphous phase as well as on the final crystallization products. Due to the fact that multilayer ceramics based on LTCCs are gaining increasing interest in the manufacturing of highly integrated devices for microelectronic and sensor applications, there is the need to establish a better understanding of their mechanical and electrical behaviour in the elevated temperature regime. In this study, four commercial LTCC substrate materials in addition to a test product in the sintered state, namely DP 951, DP 943, both from DuPont, CT 800 and AHT-01, both from Heraeus, and GC from CeramTec were investigated in respect to the temperature dependence of their mechanical and electrical properties up to temperatures of 950 °C. Mechanical characterization included three-point bending tests on single layer substrates. Furthermore, the surface resistivity as a function of temperature up to 500°C was determined under vacuum for DP 951. Next, these results were correlated to the composition of the glasses, determined by inductively coupled plasma (ICP) analysis, as well as the crystallization products apparent in the composites, which were determined by XRD of the sintered substrates and in-situ HT-XRD for DP 951. Results gained from these investigations of the commercial LTCC products were compared to measurements carried out on glass-ceramic composites developed in-house exhibiting improved electrical behaviour and good temperature stability.

Proceedings Article | 19 May 2009 Paper

Influence of back pressure and plasma power on grain size, phase composition and resistivity of tantalum thin films

M. Grosser, U. Schmid

Proceedings Volume 7362, 736216 (2009) https://doi.org/10.1117/12.821332

KEYWORDS: Tantalum, Thin films, Plasma, Thin film deposition, Scanning electron microscopy, Resistance, X-ray diffraction, Sputter deposition, Eye, Actuators

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We determined the growth rate, electrical performance and morphology of tantalum (Ta) thin films in a wide range of back pressure (i.e. 0,003-0,06 mbar) and plasma power P_p (i.e. 100-900 W) levels at nominally unheated substrate conditions during deposition. First, Ta thin films with nearly constant thickness (mean value: 230 (±50) nm) were deposited by varying the sputter time in dependence of the plasma power. Next, we increased the sputter time at constant plasma power to demonstrate that we get a higher resistivity with increasing film thickness as well as at high back pressures when depositing Tantalum predominantly in the beta phase. Doing so, the resistivity of the tantalum thin films can be tailored over two decades at constant film thickness only by tuning these important deposition parameters. Furthermore, X-ray diffraction (XRD) measurements showed a decreasing grain size at samples with a higher resistivity proving the physical basis of this finding. All results can be explained based on the variation in microstructure of the thin films at different deposition parameters such as the grain size. Furthermore, when knowing the growth rate (i.e. film thickness and sputter time) the corresponding microstructure present in the Ta thin films can be estimated.

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