Photonic materials suitable for the mid-infrared wavelength range are in high demand for future astronomical instruments, particularly for space missions like the Large Interferometer For Exoplanets (LIFE). In this work, we have developed a high-performance photonic integrated platform with the potential to operate in the entire wavelength range required by the LIFE mission (6-16 μm; goal: 4–18.5 μm). Buried InGaAs waveguides with InP cladding are used, with wet-etch fabrication patterning and Fe doping incorporation during material growth. Thanks to these approaches, the first experimental results demonstrate remarkably low propagation losses below 2.5 dB/cm at 9.5 wavelengths in both TE and TM polarization modes. The achieved results of this new platform are the starting point for more complex photonic devices including nulling beam-combiners among other astronomical applications.
Periodically patterning silicon with a subwavelength pitch opens new degrees of freedom to control the propagation of light and sound in silicon photonic circuits with unprecedented flexibility. In this invited presentation, we will show our most recent results on the use suspended silicon waveguides for supercontinuum generation in the near-IR and mid-IR. We will also discuss our recent demonstrations of subwavelength engineering of photons and phonons in suspended and non-suspended silicon optomechanical cavities
Bulk whispering gallery mode optical resonators like spheres and disks provide a wide range of remarkable optical properties and ultra-high quality factors. In this invited presentation we will show our most recent results on the use of subwavelength metamaterial engineering to couple bulk resonators and integrated Si waveguides. We experimentally achieve up to 99% light coupling efficiency for microspheres and microdisks made of silica, lithium niobate, and calcium fluoride, with diameters between 300 µm and 3.6 mm. These results open promising prospects for the implementation of a new generation of devices combining high-performance bulk resonators and complex Si photonic circuits.
The large mode size mismatch between standard single-mode optical fibers and silicon-on-insulator (SOI) waveguides poses a significant challenge to efficiently couple light from the optical fiber to the chip, and vice versa. Surface grating couplers are often used for this purpose, however, their operational bandwidth is limited to a few tens of nanometers, as a consequence of the wavelength-dependent radiation angle. This constraint seriously hampers the use of surface grating couplers for next-generation passive optical networks (PONs), in which the wavelengths used for the upstream and downstream channels are separated more than 150 nm.
In this work, we present a dual-band grating coupler for 10 Gbit symmetric PONs. Our device operates as a wavelength multiplexer/demultiplexer, simultaneously coupling and combining/splitting two optical signals at the wavelengths of λ_1=1270 nm and λ_2=1577 nm. The coupler is based on engineering a surface grating coupler to obtain opposite radiation angles for the two respective wavelengths. To achieve a higher coupling efficiency, the material platform thicknesses were optimized as a tradeoff between the waveguide propagation loss and the substrate reflectivity. By judiciously choosing the period (Λ=500 nm) and the duty cycle (DC=55%) of the grating section, an efficient dual-band grating coupler is designed with a minimum feature size of 225 nm. The coupler was fabricated in ST Crolles using their 300 mm SOI platform and 193-nm deep-ultraviolet lithography, demonstrating that large-scale fabrication is feasible. Measured fiber-chip coupling efficiencies were -4.9 dB and -5.2 dB with a 3-dB bandwidth of >27 nm and 56 nm at λ_1=1270 nm and λ_2=1577 nm, respectively.
Mid-infrared (mid-IR) spectroscopy is a nearly universal way to identify chemical and biological substances, as most of the molecules have their vibrational and rotational resonances in the mid-IR wavelength range. The development of silicon-based mid-IR photonic circuits has recently gained a lot of attention. Among the different materials available in silicon photonics, germanium (Ge) and silicon-germanium (SiGe) alloys with a high Ge concentration are particularly interesting because of the wide transparency window of Ge extending up to 15 µm.
In this work we will review recent results in the development of photonics circuit based on Ge-rich SiGe waveguides.
The Si transparency (1.1 μm – 8 μm wavelength) contains the strongest absorption features of a wide range of chemical and biological substances. However, the use of SOI in the mid-IR is hampered by the large absorption of the buried oxide (BOX) for wavelengths above 4 μm. Silicon membranes have garnered great interest for their unique capability to overcome the BOX limitation while leveraging the advantages of Si photonics. On the other hand, silicon is uniquely poised for the implementation of wideband mid-IR sources based on nonlinear frequency generation.
Promising supercontinuum and frequency comb generation have already been demonstrated in Si. Still, current implementations have a limited flexibility in the engineering of phase-matching conditions and dispersion, which complicates the shaping of the nonlinear spectrum. Patterning Si with features smaller than half of the wavelength (well within the capabilities of standard large-volume fabrication processes) has proven to be a simple and powerful tool to implement metamaterials with optimally engineered properties.
Here, we present the design of nanostructured silicon membrane waveguides with ultra-wideband flat anomalous dispersion in a wavelength span exceeding 5 µm. Our three-dimensional finite difference time domain (FDTD) calculations predict flat anomalous dispersion near 50 ps/km⋅nm between 2.5 µm and 8 µm wavelength. These results illustrate the potential of subwavelength metamaterial engineering to control chromatic dispersion in Si membrane waveguides. This is a promising step towards the implementation of wideband nonlinear sources in the mid-IR for silicon photonics.
Photonics integration in the mid-Infrared (mid-IR) spectral range, and more specifically the fingerprint region between 5 and 20 μm wavelength has garnered a great interest as it provides an immense potential for applications in spectroscopy and sensing. The unique vibrational and rotational resonances of the molecules at these wavelengths can be exploited for non-intrusive, unambiguous detection of the molecular composition of a broad variety of gases, liquids or solids, with a great interest for many high-impact applications. Fourier-transform spectrometers (FTS) are a particularly interesting solution for the on-chip integration due to their superior robustness against fabrication imperfections. However, the performance of current on-chip FTS implementations is limited by tradeoffs between bandwidth and resolution, for a given footprint. In this work we propose and experimentally demonstrate a new FTS approach that gathers the advantages of spatial heterodyning and optical path tuning by thermo-optic effect. The high resolution is provided by spatial multiplexing among different interferometers with increasing imbalance length, while the broadband operation is enabled by fine sampling interval of the optical path delay in each interferometer harnessing the thermo-optic effect. This novel approach overcomes the bandwidth-resolution tradeoff in conventional counterparts. The fabricated device enables a bandwidth as wide as 603 cm-1 (instead of 74 cm-1 with no-thermal tuning) near 7.7 μm wavelength, keeping a resolution better than 15 cm-1 with the same footprint. This device is fabricated in a Ge-rich graded-index SiGe platform with experimentally proven low loss operation up to 8.5 μm wavelength.
Mid-infrared racetrack resonators are demonstrated working at 8μm wavelength. The devices are based on a graded SiGe platform providing low propagation loss on a large wavelength range in the mid-IR. Different resonators designs have been fabricated, with varying gap distances in the directional coupler. Q factors of more than 3000 have been experimentally demonstrated. These results pave the way towards compact mid-IR sensors or efficient active devices.
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