The possibility of obtaining hexagonal modification zinc selenide heterolayers by isovalent substitution method is considered. Optical reflection is investigated and the basic parameters of α-ZnSe energy structure in the center of the Brilloiun zone are determined. Photoluminescence of undoped heterolayers is studied and the role of intrinsic point defects formed by singly charged vacancies of selenium V•Se and zinc V'Zn in the formation of radiation is discussed.
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