For propose of achieving the high coherent quantum dots or the expected spectral emission, we have proposed the
epitaxial method solved by using self-organized grown on the InxGa1-xAs relaxed layer and the mis-orientated GaAs
substrates. In this study, using extra slow growth rate of 0.075ML/sec to grow the quantum dot matrix under the
temperature of 500°C by the general Riber 32P solid-source MBE system, the high surface density and uniformity in size
of two-stacked of quantum dot (QD) matrix have been established. The temperature dependences of the full widths at
half-maximum (FWHM) and the positions of photoluminescence (PL) bands are studied experimentally by adding
In0.1Ga0.9As surfactant layer and using mis-orientated substrate, respectively. The 3-dimensional QD images using
atomic force microscopy (AFM) well agree with the results of above mentioned. Therefore, a systematic estimate is
given of the QD structures grown on different epitaxial conditions.
We present results concerning the influence of organometrallic vapro phase epitaxy (OMVPE) grwoth paramters under ultra low V/III ratio on the surface morphology and temperature-dependent photoluminescence. Due to Indium segregation inteh 2D InAs wetting layers and accumulation from multi-atomic step edge on (001) 2° off toward (111) n-type GaAs substrate, self-assembled InAs quatnum dot formation takes pace aroudn or above 2D InAs islands while ~ one monolayer of InAs is regularly grown on GaAs substrate. It is attributed that the desorbed Indium Recaptured and nucleated effect on edge along (110)-orientation of GaAs substrate.
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