High power diode laser systems with homogenized intensity distribution have been widely used in laser annealing, cladding and surface heating. New applications such as semiconductor wafer annealing prefer adjustable laser beam size for process optimization, especially during process development stage. Here we report a development of a diode laser system with an adjustable beam size and highly uniform line beam intensity. Beam size in two dimensions perpendicular to its propagation direction can be adjusted independently with higher than 97% intensity uniformity in length dimension. The beam width is adjustable from 60 to 90um (FWHM) and the beam length is adjustable from 11mm to 12mm (FWHM). The output power can reach 1500W at 808nm wavelength with a power density reaches ~170KW/cm2. Detailed misalignment sensitivities of the Micro-Lens Arrays (MLAs), with respect to the lateral position, the rotating angle, and the distance between the two MLAs are studied. Beam back reflection isolation is also considered in the design to accommodate for high reflectivity materials processing. This new laser system can adapt to the requirement of different beam size quickly and precisely by simply adjusting the lens group position, without interrupting production process and increasing manufacturing cost.
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