This paper discusses the use of wide bandgap devices (SiC-MOSFET) in the design of a push-pull inverter which
provides inexpensive low power dc-ac inverters. The parameters used were 1200V SiC MOSFET(C2M0040120D) made
by power company ROHM. This modeling was created using parameters that were provided from a device datasheet.
The spice model is provided by this company to study the effect of adding this component on push-pull inverter ordinary
circuit and compared results between SiC MOSFET and silicon MOSFET (IRFP260M). The results focused on Vout and
Vmos stability as well as on output power and MOSFET power loss because it is a very crucial aspect on DC-AC inverter
design. These results are done using the National Instrument simulation program (Multisim 14). It was found that power
loss is better in the 12 and 15 vdc inverter. The Vout in the SIC MOSFET circuit shows more stability in the high current
low resistance load in comparison to the Silicon MOSFET circuit and this will improve the overall performance of the
circuit.
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