We investigated the effect of the alloy composition of InGaAsP barrier layers on the photoluminescence (PL) properties
of InAs columnar quantum dots (CQDs) grown by metal organic vapor phase epitaxy (MOVPE). The PL wavelength of
the CQDs was controlled by the strain of the InGaAsP barrier layers for fixed bandgap wavelength conditions. The PL
intensity of the CQDs showed significant increase with the bandgap energy of the barrier layers, that is, with increasing
indium and phosphorus composition, due to the reduced defects and dislocation in the samples. The result is considered
to be related to the miscibility of the InGaAsP quaternary alloy at a low growth temperature. By applying a larger
bandgap energy to the barrier layers, triple-stacked CQDs with high crystalline quality was demonstrated in the 1.55-μm
region.
We have investigated the temperature dependence of InAs columnar quantum dots (CQDs) surrounded by InGaAsP
barriers with different bandgap energies toward high-temperature performance for semiconductor optical amplifiers. It
was found that larger bandgap energy in InGaAsP side barriers enabled to increase the quasi-Fermi level (F) separation
between the conduction and valence bands from theory. We have fabricated two types of CQD-SOAs with different side
barrier energies and compared temperature characteristics. Decrease in the material gains for CQD with a larger side
barrier bandgap was suppressed by 20% with increasing temperature from 25 °C to 85 °C.
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