One of the ways to create highly sensitive gas sensors based on graphene is to modify graphene by forming nanometer-sized channels in it. In this work, ion beam etching was used for these purposes. The necessary doses of Ga+ focused ion beam (FIB) were found to etch graphene. Several different structures based on modified graphene have been manufactured and investigated. A method for manufacturing graphene structures with a width of less than 10 nm by Ga+ FIB has been found. Also, high conductivity for structures of nanogap with polyaniline (PANi) was found, which can be used as selective gas sensing structures. The paper presents the responses of structures with nano-channel of PANi between modified graphene electrodes to different concentrations of ammonia and water.
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