Dr. Nikolay N. Mikhailov Profile

Dr. Nikolay N. Mikhailov

at Rzhanov Institute of Semiconductor Physics

SPIE Involvement:

Author

Publications (25)

SPIE Journal Paper | 23 November 2020

Mid-infrared stimulated emission in HgCdTe/CdHgTe quantum well heterostructures at room temperature

Mikhail Fadeev, Alexander Troshkin, Alexander Dubinov, Vladimir Utochkin, Anna Razova, Vladimir Rumyantsev, Vladimir Aleshkin, Vladimir Gavrilenko, Nikolay Mikhailov, Sergey Dvoretsky, Sergey Morozov

OE, Vol. 60, Issue 08, 082006, (November 2020) https://doi.org/10.1117/12.10.1117/1.OE.60.8.082006

KEYWORDS: Quantum wells, Heterojunctions, Mid-IR, Mercury cadmium telluride, Photons, Absorption, Cadmium, Optical engineering, Autoregressive models, Semiconductors

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SPIE Journal Paper | 23 November 2020

Urbach tail and nonuniformity probe of HgCdTe thin films and quantum well heterostructures grown by molecular beam epitaxy

Vladimir Rumyantsev, Anna Razova, Mikhail Fadeev, Vladimir Utochkin, Nikolai Mikhailov, Sergey Dvoretsky, Vladimir Gavrilenko, Sergey Morozov

OE, Vol. 60, Issue 08, 082007, (November 2020) https://doi.org/10.1117/12.10.1117/1.OE.60.8.082007

KEYWORDS: Quantum wells, Mercury cadmium telluride, Absorption, Cadmium, Thin films, Heterojunctions, Electrons, Molecular beam epitaxy, Mercury, Liquids

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Proceedings Article | 23 August 2017 Paper

Paper

Temperature-driven massless fermions in HgCdTe heterostructures

F. Teppe, S. Ruffenach, S. Krishtopenko, M. Marcinkiewicz, C. Consejo, J. Torres, M. Orlita, W. Knap, D. Smirnov, S. Morozov, V. Gavrilenko, N. Mikhailov, S. Dvoretskii

Proceedings Volume 10383, 103830C (2017) https://doi.org/10.1117/12.2275037

KEYWORDS: Heterojunctions, Particles, Quantum wells, Cadmium, Magnetism, Quantum electrodynamics, Electrons

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SPIE Journal Paper | 10 December 2015

Mercury–cadmium–telluride thin layers as subterahertz and infrared detectors

Fedir Sizov, Zinoviia Tsybrii, Vyacheslav Zabudsky, Oleksandr Golenkov, Volodymyr Petryiakov, Sergey Dvoretsky, Nikolai Michailov, Anna Shevchik-Shekera, Ihor Lysiuk, Ernesto Dieguez

OE, Vol. 54, Issue 12, 127102, (December 2015) https://doi.org/10.1117/12.10.1117/1.OE.54.12.127102

KEYWORDS: Sensors, Terahertz radiation, Infrared sensors, Infrared detectors, Antennas, Mercury cadmium telluride, Infrared imaging, Infrared radiation, Semiconductors, Bolometers

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Proceedings Article | 26 September 2013 Paper

Paper

Magnetospectroscopy of HgTe based topological insulators

F. Teppe, M. Zholudev, M. Orlita, C. Consejo, N. Diakonova, D. But, D. Coquillat, W. Knap, N. Mikhailov, S. Dvoretskii, V. Aleshkin, V. Gavrilenko

Proceedings Volume 8813, 88130L (2013) https://doi.org/10.1117/12.2022854

KEYWORDS: Quantum wells, Magnetism, Fermions, Terahertz radiation, Dielectrics, Cadmium, Absorption, Systems modeling, Heterojunctions, Oscillators

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Proceedings Article | 22 September 2011 Paper

Paper

THz/sub-THz detector based on electrons and holes heating by electromagnetic wave propagating along Hg1-xCdxTe layer

F. Sizov, V. Zabudsky, V. Dobrovolsky, N. Momot, Z. Tsybrii, M. Apats'ka, M. Smoliy, N. Dmytruk, S. Bunchuk, N. Mikhailov, V. Varavin

Proceedings Volume 8167, 816728 (2011) https://doi.org/10.1117/12.896580

KEYWORDS: Sensors, Electrons, Bolometers, Terahertz radiation, Antennas, Semiconductors, Electromagnetic radiation, Waveguides, Signal detection, Wave propagation

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Proceedings Article | 5 November 2010 Paper

Paper

THz/sub-THz narrow-gap semiconductor detector

F. Sizov, V. Dobrovolsky, V. Zabudsky, N. Momot, Z. Tsybrii, N. Michailov, S. Dvoretskii

Proceedings Volume 7854, 785433 (2010) https://doi.org/10.1117/12.869983

KEYWORDS: Bolometers, Electrons, Sensors, Semiconductors, Terahertz radiation, Antennas, Resistance, Electromagnetic radiation, Mercury cadmium telluride, Waveguides

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Proceedings Article | 27 September 2008 Paper

Paper

MCT detectors: from IR to sub-mm and mm wavelength bands

F. Sizov, V. Vasiliev, J. Gumenjuk-Sichevska, Yu. Kamenev, S. Dvoretsky, N. Mikhailov

Proceedings Volume 7100, 71002C (2008) https://doi.org/10.1117/12.797436

KEYWORDS: Sensors, Terahertz radiation, Photodiodes, Bolometers, Semiconductors, Photons, Infrared sensors, Manufacturing, Infrared detectors, Superconductors

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Modern technology advances combined with unique physical properties of mercury cadmium telluride (MCT) material, empower low-signal applications in technical vision systems. Properties of MCT detectors manufactured from LPE and MBE epilayers and their dependences on thickness and doping both for IR and THz regions are discussed. It is shown by comparison of experimental data and modeling of I-V dark current characteristics that MCT photodiode ultimate electrical characteristics are limited by diffusion current in n⁺-n^--p junctions and by current via the deep traps in the gap with position E_t= 0.7 E_g above the valence band and concentrations N_t = (1.0-5.5)•10¹⁵ cm^-3 which are comparable with donor concentration in n^--region Nd = (1.1-1.8)•1015 cm^-3. Detector array parameters for a wavelength range 8-12 microns are: detectivity D*=1.9•10¹¹ cm•Hz^1/2/W, noise equivalent difference temperature NEDT ≈ 9 mK, dynamical resistance R ≈ 4·10⁹ Ohm for the reverse biases ΔV = 0.1-0.2 V. Also, it is shown that MCT layers can be successfully used as sub-mm or mm wave ambient temperature or moderately cooled hot electron bolometers. Thus, in addition to the wavelength range from SWIR to VLIR, where the MCT detectors are employed mainly as photodiodes or photoresistors, they can be used as sub-mm or mm wave detectors in the range from 190 microns to 8 mm. They can be employed here as semiconductor hot electron bolometers (SHEB). Measurements performed at electromagnetic wave frequencies ν = 37, 55, 77 GHz, and also at 0.89 and 1.58 THz with non-optimized Hg_0.8Cd_0.2Te bolometer prototype, has confirmed the basic concepts of SHEB. At ν = 0.89 THz, 77 GHz and 37 GHz the signal temperature dependencies were measured too. At 77 K the SHEB sensitivity at ν = 37 and 77 GHz is increasing up to two orders compared to room temperature data. The sensitivity S_ν ≈ 2 V/W at 300 K, and calculated both Johnson-Nyquist and generation-recombination noise values give estimations of SHEB NEP ~ 4•10^-10 W at band-width Δf = 1 Hz and ν = 37 GHz.

Proceedings Article | 22 April 2006 Paper

Paper

MCT infrared photodiodes on the basis of graded gap Р-р heterojunction grown by MBE HgCdTe epilayers on GaAs

V. Vasiliev, V. Remesnik, S. Dvoretsky, V. Varavin, N. Mikhailov, Yu. Sidorov, A. Suslyakov, A. Aseev

Proceedings Volume 6189, 61892A (2006) https://doi.org/10.1117/12.663506

KEYWORDS: Staring arrays, Photodiodes, Heterojunctions, Diodes, Gallium arsenide, Signal to noise ratio, Temperature metrology, Mercury cadmium telluride, Sensors, Diffusion

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Proceedings Article | 15 October 2005 Paper

Paper

MWIR and LWIR detectors based on HgCdTe/CdZnTe/GaAs heterostructures

Sergey Dvoretsky, Vasiliy Varavin, Nikolay Mikhailov, Yuri Sidorov, Tamara Zakharyash, Vladimir Vasiliev, Victor Ovsyuk, Galina Chekanova, Mikhail Nikitin, Ivan Lartsev, Alexander Aseev

Proceedings Volume 5964, 59640A (2005) https://doi.org/10.1117/12.624912

KEYWORDS: Staring arrays, Long wavelength infrared, Photovoltaics, Sensors, Mid-IR, Heterojunctions, Interfaces, Resistance, Gallium arsenide, Photoresistors

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Proceedings Article | 30 September 2005 Paper

Paper

The boron implantation in the graded-band MBE HgCdTe epilayer

Alexander Voitsekhovskii, Denis Grigor'ev, Andrey Kokhanenko, Alexander Korotaev, Yuriy Sidorov, Vasiliy Varavin, Sergey Dvoretsky, Nicolay Mikhailov, Niyaz Kh. Talipov

Proceedings Volume 5957, 595718 (2005) https://doi.org/10.1117/12.622158

KEYWORDS: Boron, Ions, Mercury, Cadmium, Tellurium, Ion implantation, Statistical analysis, Mercury cadmium telluride, Manufacturing, Diffusion

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Proceedings Article | 30 September 2005 Paper

Paper

Electrical properties of MIS-photodetectors in base of MBE graded-band HgCdTe

A. Voitsekhovskii, S. Nesmelov, A. Kokhanenko, Yu. Sidorov, V. Varavin, S. Dvoretsky, N. Mikhailov, V. Vasiliev, Yu. Mashukov, T. Zakharyash

Proceedings Volume 5957, 595717 (2005) https://doi.org/10.1117/12.622117

KEYWORDS: Silicon, Mercury cadmium telluride, Resistance, Semiconductors, Capacitance, Electrodes, Mercury, Cadmium, Epitaxy, Dielectrics

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Proceedings Article | 29 September 2005 Paper

Paper

V-defects at MBE MCT heteroepitaxy on GaAs(310) and Si(310) substrates

Maxim Yakushev, Alexander Babenko, Danil Ikusov, Vladimir Kartashov, Nicolai Mikhailov, Irina Sabinina, Yuri Sidorov, Vladimir Vasiliev

Proceedings Volume 5957, 59570G (2005) https://doi.org/10.1117/12.622424

KEYWORDS: Tellurium, Cadmium, Heterojunctions, Mercury cadmium telluride, Diodes, Photodetectors, Silicon, Etching, Heteroepitaxy, Gallium arsenide

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Proceedings Article | 7 April 2005 Paper

Paper

4x288 linear array with hybrid ROIC (CCD + CMOS)

Fiodor Sizov, Victor Ovsyuk, Vladimir Vasil’ev, Tamara Zakhar'yash, Alexandr Suslyakov, Nikolai Talipov, Nikolai Mikhailov, Vasiliy Varavin, Vladimir Reva, Alexandr Golenkov, Yuriy Derkach, Vyacheslav Zabudsky, Sergei Korinets

Proceedings Volume 5726, (2005) https://doi.org/10.1117/12.591699

KEYWORDS: Charge-coupled devices, Readout integrated circuits, Silicon, CMOS technology, Manufacturing, Photodiodes, Diodes, Transistors, Staring arrays, Design for manufacturability

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Proceedings Article | 22 October 2003 Paper

Paper

Radiation effects in photoconductive MCT MBE heterostructures

Aleksander Voitsekhovskii, Andrej Kokhanenko, Aleksander Korotaev, D. Grigor'ev, Vasily Varavin, Sergey Dvoretsky, Yuri Sidorov, Nikolay Mikhailov

Proceedings Volume 5136, (2003) https://doi.org/10.1117/12.519767

KEYWORDS: Heterojunctions, Magnetism, Gamma radiation, Radiation effects, Crystals, Mercury cadmium telluride, Semiconductor physics, Molecular beam epitaxy, Electron beams, Statistical analysis

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Proceedings Article | 22 October 2003 Paper

Paper

Conductivity anisotropy of CdHgTe MBE layers with a periodic surface microrelief

Aleksander Voitsekhovskii, Andrej Kokhanenko, N. Nesterovich, Vasily Varavin, Sergey Dvoretsky, Yuri Sidorov, Nikolay Mikhailov

Proceedings Volume 5136, (2003) https://doi.org/10.1117/12.519765

KEYWORDS: Anisotropy, Temperature metrology, Annealing, Microscopy, Epitaxy, Gallium arsenide, Crystals, Absorption, Solids, Scattering

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Proceedings Article | 22 October 2003 Paper

Paper

HgCdTe epilayers on GaAs: growth and devices

Vasily Varavin, V. Vasiliev, Sergey Dvoretsky, Nikolay Mikhailov, Victor Ovsyuk, Yuri Sidorov, A. Suslyakov, M. Yakushev, Alexander Aseev

Proceedings Volume 5136, (2003) https://doi.org/10.1117/12.519761

KEYWORDS: Hassium, Gallium arsenide, Diodes, Tellurium, Crystals, Staring arrays, Mercury, Resistance, Photodiodes, Photoresistors

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Proceedings Article | 30 September 2003 Paper

Paper

The state of the art and prospects of Cd_xHg_1-xTe molecular beam epitaxy

V. Varavin, A. Gutakovsky, S. Dvoretsky, V. Kartashev, A. Latyshev, N. Mikhailov, D. Pridachin, V. Remestnik, S. Rukhlitsky, I. Sabinina, Yu. Sidorov, V. Titov, V. Shvetz, M. Yakushev, A. Aseev

Proceedings Volume 5126, (2003) https://doi.org/10.1117/12.517366

KEYWORDS: Silicon, Gallium arsenide, Tellurium, Molecular beam epitaxy, Mercury, Annealing, Heterojunctions, Photodetectors, Temperature metrology, Photodiodes

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Proceedings Article | 14 April 2003 Paper

Paper

Status of molecular beam epitaxy of CdxHg1-xTe

A. Antsiferov, L. Burdina, Vasily Varavin, A. Gutakovsky, Sergey Dvoretsky, V. Kartashev, Nikolay Mikhailov, D. Pridachin, V. Remesnik, S. Rykhlitskii, I. Sabinina, Yuri Sidorov, E. Spesivtsev, V. Titov, V. Shvets, M. Yakushev, Alexander Aseev

Proceedings Volume 5065, (2003) https://doi.org/10.1117/12.502290

KEYWORDS: Hassium, Silicon, Gallium arsenide, Control systems, Tellurium, Process control, Photodiodes, Interfaces, Molecular beam epitaxy, Molecular beams

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Proceedings Article | 29 July 2002 Paper

Paper

Ellipsometric measurements of the optical constants of solids under impulse heating

V. Shvets, Nikolay Mikhailov, M. Yakushev, E. Spesivtsev

Proceedings Volume 4900, (2002) https://doi.org/10.1117/12.484591

KEYWORDS: Temperature metrology, Optical testing, Solids, Annealing, Etching, Silicon, Refractive index, Ellipsometry, Molecular beam epitaxy, Time metrology

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Proceedings Article | 22 February 2001 Paper

Paper

MCT heterostructure design and growth by MBE for IR devices

Yuri Sidorov, Sergey Dvoretsky, Nikolay Mikhailov, M. Yakushev, Vasily Varavin, Vladimir Vasilyev, A. Suslyakov, Victor Ovsyuk

Proceedings Volume 4355, (2001) https://doi.org/10.1117/12.417790

KEYWORDS: Manufacturing, Palladium, Interfaces, Resistance, Photodiodes, Photoresistors, Oxides, Tellurium, Molecular beam epitaxy, Solids

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Proceedings Article | 28 November 2000 Paper

Paper

MCT heterostructure design and growth by MBE for IR devices

Yuri Sidorov, Sergey Dvoretsky, Nikolay Mikhailov, M. Yakushev, Vasily Varavin, Vladimir Vasilyev, A. Suslyakov, Victor Ovsyuk

Proceedings Volume 4340, (2000) https://doi.org/10.1117/12.407736

KEYWORDS: Manufacturing, Palladium, Interfaces, Resistance, Photodiodes, Photoresistors, Oxides, Tellurium, Molecular beam epitaxy, Gallium arsenide

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Proceedings Article | 13 August 1997 Paper

Paper

Focal plane arrays based on HgCdTe epitaxial layers MBE-grown on GaAs substrates

Vladimir Vasilyev, Dmitrii Esaev, Anatoly Klimenko, A. Kozlov, Alexander Krymsky, I. Marchishin, Victor Ovsyuk, Larisa Romashko, A. Suslyakov, N. Talipov, V. Voinov, T. Zakhariash, Yuri Sidorov, Vasily Varavin, Sergey Dvoretsky, Nikolay Mikhailov

Proceedings Volume 3061, (1997) https://doi.org/10.1117/12.280314

KEYWORDS: Sensors, Photodiodes, Detector arrays, Multiplexers, Staring arrays, Photodetectors, Gallium arsenide, Indium, Mercury cadmium telluride, Long wavelength infrared

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Proceedings Article | 17 June 1996 Paper

Paper

Infrared photoconductors fabricated on Hg1-xCdxTe film grown by molecular beam epitaxy

Victor Ovsyuk, A. Suslyakov, T. Zahariash, S. Studenikin, Vladimir Vasilyev, Yuri Sidorov, Sergey Dvoretsky, Vasily Varavin, Nikolay Mikhailov, V. Liberman

Proceedings Volume 2746, (1996) https://doi.org/10.1117/12.243050

KEYWORDS: Photoresistors, Molecular beam epitaxy, Infrared radiation, Infrared photography, Heterojunctions, Interfaces, Ellipsometry, Gallium arsenide, Long wavelength infrared, Mid-IR

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Proceedings Article | 17 June 1996 Paper

Paper

Fabrication and characteristics of long-wavelength infrared planar photodiodes on molecular beam epitaxial p-HgCdTe films

Victor Ovsyuk, S. Studenikin, A. Suslyakov, N. Talipov, Vladimir Vasilyev, T. Zahariash, Yuri Sidorov, Sergey Dvoretsky, Nikolay Mikhailov, Vasily Varavin

Proceedings Volume 2746, (1996) https://doi.org/10.1117/12.243041

KEYWORDS: Photodiodes, Diffusion, Long wavelength infrared, Diodes, Oxides, Molecular beams, Annealing, Resistance, Surface roughness, Epitaxy

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Showing 5 of 25 publications

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