We present InP-based Triple Barrier Resonant Tunneling Diodes monolithically integrated with an on-wafer resonant or broad band antenna. Biasing these diodes in the negative differential resistance regime provides a fundamental mode oscillation of preliminary 90 μW at f0 = 260 GHz. At 280 GHz an estimated high zero-bias resonant responsivity of 50.000 V/W is modeled. A broad band average responsivity of 900 V·W-1 was determined in the frequency range from 230 … 330 GHz along with a minimum Noise Equivalent Power of 1 pW·Hz-0.5. This concept is expected to provide very high sensitivities at frequencies up to f ≥ 1 THz.
We demonstrate high-reflectivity crack-free Al0.18Ga0.82N/Al0.8Ga0.2N distributed Bragg reflectors (DBR) and
monolithic microcavities grown by molecular beam epitaxy on thick c-axis GaN templates. The elastic strain energy in
the epilayer is minimized by compensating the compressive and tensile stress in every period of the DBR structure. A
25 period DBR mirror provides a 26nm-wide stop band centered at 347 nm with the maximum reflectivity higher than
99%. The high-reflectivity DBRs can be used to form high Q-factor monolithic AlGaN/AlGaN microcavities.
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