This paper presents design and analysis of a 10GHz inductance-capacitance (LC)-Voltage-Controlled Oscillators (VCO)
implemented with a very high quality (Q) factor on-chip Micro-Electro-Mechanical Systems (MEMS) inductor using
0.25μm silicon-on-sapphire (SOS) technology. A new symmetric topology of suspended MEMS inductor is proposed to
reduce the length of the conductor strip and achieve the lowest series resistance in the metal tracks. This MEMS inductor
has been suspended above the high resistivity SOS substrate to minimise the substrate loss and therefore, achieve a very
high Q-factor inductor. A maximum Q-factor of 191.99 at 11.7GHz and Q-factor of 189 at 10GHz has been achieved for
a 1.13nH symmetric MEMS inductor. The proposed inductor has been integrated with a VCO on the same substrate
using the Metal layers in SOS technology removing the need for additional bond wire. The 10GHz LC-VCO has
achieved a phase noise of -116.27dBc/Hz and -126.19dBc/Hz at 1MHz and 3MHz of offset frequency, respectively. It
consumes 4.725mW of power from 2.5V supply voltage while achieving a Figure of Merit (FOM) of -189.5dBc/Hz.
This paper presents design of a Film Bulk Acoustic Wave Resonators (FBARs) consisting of piezoelectric film,
aluminium nitride (AlN) with top and bottom electrodes of ruthenium (Ru). The lumped Butterworth-Van Dyke (BVD)
Circuit model is used to investigate the theoretical harmonic response and extraction equivalent circuit of the FBAR. A
three-dimensional (3D) Finite Element Method (FEM) is used to evaluate the electro-mechanical performance of the
FBAR. The one-dimension (1D) numerical and the 3D FEM simulation results are analysed and compared. The results
show that coupling coefficient (k2eff) up to 7.0% can be obtained with optimised thickness ratio of electrode/piezoelectric
layers. A Figure of Merit (FOM) that considers k2eff and quality (Q) factor is used for comparison. The area of FBAR is
900μm2 and the active filter area size of the FBAR filter is 5400μm2. The FBAR filter is designed for operation in Kuband
with centre frequency of 15.5 GHz and fractional bandwidth of 2.6%. The proposed FBAR filter has insertion loss
of -2.3dB which will improve the performance of Ku-band transceiver and improve communication range and data rates
in Ku-band communication links.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.