This paper reports on SiGeSn/GeSn multi-quantum-well microdisk lasers. The fabrication of the devices includes a selective under-etching step, which enhances the guiding of the whispering gallery modes inside the cavity. Lasing occurs under different electrical pumping conditions with a very low threshold current and for long, quasi-continuous wave pulses compared to previously reported GeSn-based microdisk lasers. Furthermore, the lasing threshold current is reduced by a factor of ten compared to similar double-heterostructure devices.
Group IV materials suffers from a lack of efficient light generation for the on-chip integration of active photonic component on silicon (Si). One of the solutions is to use new material like Germanium-tin alloys (GeSn) that can provide direct band gap alignment of the band structure. The use quantum well (QW) is known, in principle, to favor room temperature laser operation at reasonable thresholds over bulk material. While most of advances were performed with bulk materials, exploring adequate designs of GeSn/SiGeSn based QW including strain engineering should be helpful for futures developments of Si-based active photonic devices.
Here we demonstrate up to 290 K laser operation in GeSn/GeSn multi-QW microdisks cavities under optical pumping. The QW and barrier were performed by varying the Sn content. We used specific layer transfer technology and a Silicon Nitride (SiN) stressor layer was introduced to inject tensile strain in the active region such to enhance the directness of the transition. Interestingly this is the highest temperature of operation for GeSn quantum wells lasers. This progress opens the route towards room temperature electrically pumped laser operating.
Advancements in semiconductor materials, particularly within Group IV, are crucial to meet the demand for efficient and adaptable laser sources. Germanium-tin (GeSn) alloys have emerged as promising candidates, facilitating full monolithic integration into silicon photonics. Progress in optically pumped GeSn lasers is remarkable, but electrically injected ones face challenges due to low index contrast to effectively confine the optical mode. We propose an electrically pumped laser design based on GeSnOI (GeSn On Insulator) scheme. Modal analysis was performed at 2500 nm wavelength using finite element method, optimizing electromagnetic wave confinement, and mitigating direct electrical contact deposition on the active zone. Simulation results indicated that the most effective fabrication approach involves bonding with another silicon substrate using SiN dielectric layer as cladding, thus taking advantage of high optical index contrast. This advancement heralds the potential for room temperature operation of electrically pumped lasers.
Group IV materials suffers from a lack of efficient light generation for the on-chip integration of active photonic component on silicon (Si). One of the solutions is to use new material like Germanium-tin alloys (GeSn) that can provide direct band gap alignment of the band structure. The use quantum well (QW) is known, in principle, to favor room temperature laser operation at reasonable thresholds over bulk material. While most of advances were performed with bulk materials, exploring adequate designs of GeSn/SiGeSn based QW including strain engineering should be helpful for futures developments of Si-based active photonic devices.
Here we demonstrate up to 290 K laser operation in GeSn/GeSn multi-QW microdisks cavities under optical pumping. The QW and barrier were performed by varying the Sn content. We used specific layer transfer technology and a Silicon Nitride (SiN) stressor layer was introduced to inject tensile strain in the active region such to enhance the directness of the transition. Interestingly this is the highest temperature of operation for GeSn quantum wells lasers. This progress opens the route towards room temperature electrically pumped laser operating.
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