Dr. Paul Boieriu Profile

Dr. Paul Boieriu

Senior Scientist at Sivananthan Laboratories., Inc.

SPIE Involvement:

Conference Program Committee | Author

Proceedings Article | 7 June 2024 Presentation + Paper

Energy harvesting using HgCdTe devices

Z. Yu, S. Krishnamurthy, P. Boieriu, R. Pimpinella, J. Howell, S. Fan

Proceedings Volume 13027, 1302703 (2024) https://doi.org/10.1117/12.3013711

KEYWORDS: Mercury cadmium telluride, Device simulation, Energy harvesting, Diodes

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Proceedings Article | 8 March 2019 Presentation

Inductively coupled plasma hydrogenation of LWIR type-II superlattices

Paul Boieriu, Christoph Grein, Christopher Buurma, Jered Feldman, Richard Pimpinella, Anthony Ciani, Alexander Soibel, David Ting

Proceedings Volume 10926, 109260I (2019) https://doi.org/10.1117/12.2514077

KEYWORDS: Long wavelength infrared, Plasma, Superlattices, Photodiodes, Hydrogen, Infrared materials, Infrared radiation, Structural engineering, Mercury cadmium telluride, Photodetectors

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Type-II superlattices (T2SLs) have several fundamental advantages over bulk infrared-sensitive materials due to larger band edge effective masses and the ability to have their band structures engineered to suppress Auger recombination, leading to lowering tunneling currents, longer carrier lifetimes and higher ideal sensitivity. Realizing in practice the potential performance gains relies heavily on reducing the number or efficacy of defects that form Shockley-Read-Hall (SRH) recombination centers, which otherwise limit carrier lifetimes. InAs/GaInSb T2SLs typically have relatively short minority carrier lifetimes in comparison with bulk HgCdTe, which has limited the detectivities of photodetectors based on these T2SLs at both cryogenic and ambient operating temperatures. Studies have shown that InAs/InAsSb T2SLs lattice matched to GaSb substrates are comparable in ideal photodiode performance to InAs/GaInSb ones. Reducing the electrical activity of defects by passivating them with hydrogen is equivalent to lowering their density, and has proven successful in other semiconductor systems. We report here results from Ga-free and Ga-containing T2SLs exposed to inductively-coupled plasmas (ICPs). Our technical approach consisted of characterizing the basic material properties of LWIR InAs/InAsSb T2SL wafers and device performance of LWIR InAs/GaSb T2SL photodiodes that were bulk-passivated with atomic hydrogen, and comparing with unpassivated samples. On average, the in-plane Hall electron mobility increased from 1800 cm2/Vs to 6800 cm²/Vs after hydrogenation. ICP hydrogenation also improved the minority carrier lifetime for each of the explored ICP conditions. Lifetime values increased from an average of 80 ns before hydrogenation to almost 200 ns, a relative increase of over 200%, suggest that some recombination-mediating defects have been at least partially passivated. The Hall mobility improvements were found to be rather stable over the considered short periods of room temperature storage.

Proceedings Article | 19 September 2016 Presentation + Paper

SWIR HgCdTe photodiodes for LADAR applications

Paul Boieriu, J. H. Park, S.-R. Hahn, Priyalal Wijewarnasuriya, Barry Stan, S. Sivananthan

Proceedings Volume 9974, 99740D (2016) https://doi.org/10.1117/12.2239949

KEYWORDS: LIDAR, Short wave infrared radiation, Mercury cadmium telluride, Photodiodes, Sensors, Capacitance, Receivers, Signal to noise ratio, Optical amplifiers, Mirrors

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Proceedings Article | 4 February 2013 Paper

High operation temperature of HgCdTe photodiodes by bulk defect passivation

Paul Boieriu, S. Velicu, R. Bommena, C. Buurma, C. Blisset, C. Grein, S. Sivananthan, P. Hagler

Proceedings Volume 8631, 86311J (2013) https://doi.org/10.1117/12.2004708

KEYWORDS: Mercury cadmium telluride, Hydrogen, Long wavelength infrared, Silicon, Diodes, Doping, Photodiodes, Plasmas, Mid-IR, Infrared radiation

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Proceedings Article | 14 May 2007 Paper

Uniformity studies of inductively coupled plasma etching in fabrication of HgCdTe detector arrays

R. Bommena, S. Velicu, P. Boieriu, T. S. Lee, C. Grein, K. Tedjojuwono

Proceedings Volume 6542, 65420J (2007) https://doi.org/10.1117/12.719350

KEYWORDS: Etching, Mercury cadmium telluride, Plasma, Scanning electron microscopy, Argon, Plasma etching, Photoresist materials, Chemistry, Ions, Surface roughness

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Proceedings Article | 17 May 2006 Paper

Development of high performance radiation hardened antireflection coatings for LWIR and multicolor IR focal plane arrays

Ashok Sood, Yash Puri, Latika Becker, Meimei Tidrow, Raymond Balcerak, Gregory Brill, Priyalal Wijewarnasuriya, Nibir Dhar, Paul Boieriu, Chad Fulk, Siva Sivananthan, Joseph Yehoda, Steve Finke

Proceedings Volume 6206, 620615 (2006) https://doi.org/10.1117/12.667812

KEYWORDS: Silicon, Antireflective coatings, Silicon films, Long wavelength infrared, Semiconducting wafers, Ozone, Staring arrays, Thin films, Coating, Diamond

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Proceedings Article | 28 February 2006 Paper

Single- and two-color HgTe/CdTe superlattice based infrared detectors

C. Grein, P. Boieriu, M. Flatté

Proceedings Volume 6127, 61270W (2006) https://doi.org/10.1117/12.640090

KEYWORDS: Stereolithography, Long wavelength infrared, Sensors, Electrons, Mercury, Absorption, Mercury cadmium telluride, Cadmium, Tellurium, Photodiodes

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Proceedings Article | 22 October 2004 Paper

MWIR detectors on HgCdTe grown by MBE on 3-in. diameter silicon substrates

Tae-Seok Lee, Jun Zhao, Yong Chang, Renganathan Ashokan, Sivalingam Sivananthan, Paul Boieriu, Yuanping Chen, Gregory Brill, Priyalal Wijewarnasuriya, Nibir Dhar

Proceedings Volume 5564, (2004) https://doi.org/10.1117/12.568012

KEYWORDS: Mercury cadmium telluride, Mid-IR, Annealing, Arsenic, Heterojunctions, Silicon, Interfaces, Mercury, Sensors, Diffusion

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Proceedings Article | 8 December 2003 Paper

Monolithically integrated HgCdTe focal plane arrays

Silviu Velicu, Tae-Seok Lee, Renganathan Ashokan, Christoph Grein, Paul Boieriu, Y. Chen, John Dinan, Dimitrios Lianos

Proceedings Volume 5209, (2003) https://doi.org/10.1117/12.504038

KEYWORDS: Readout integrated circuits, Mercury cadmium telluride, Silicon, Staring arrays, Metals, Semiconducting wafers, Infrared radiation, Etching, Crystals, Sensors

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Proceedings Article | 10 October 2003 Paper

Composite substrate for large-format HgCdTe IRFPA

Nibir Dhar, Y. Chen, Gregory Brill, Paul Amirtharaj, Silviu Velicu, Paul Boieriu, Anthony Birdwell, Priyalal Wijewarnasuriya

Proceedings Volume 5074, (2003) https://doi.org/10.1117/12.487725

KEYWORDS: Silicon, Mercury cadmium telluride, Long wavelength infrared, Composites, Tellurium, Selenium, Semiconducting wafers, Zinc, X-rays, Sensors

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Proceedings Article | 12 November 2001 Paper

High-temperature HgCdTe/CdTe/Si infrared photon detectors by MBE

Silviu Velicu, Renganathan Ashokan, Christoph Grein, Sivalingam Sivananthan, Paul Boieriu, Don Rafol

Proceedings Volume 4454, (2001) https://doi.org/10.1117/12.448173

KEYWORDS: Mercury cadmium telluride, Infrared detectors, Doping, Infrared radiation, Silicon, Sensors, Diodes, Infrared photography, Photodetectors, Mid-IR

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Proceedings Article | 12 November 2001 Paper

Electrical activation and electrical properties of arsenic-doped Hg1-xCdxTe epilayers grown by MBE

Yusuf Selamet, Giacomo Badano, Christoph Grein, Paul Boieriu, Vaidya Nathan, Sivalingam Sivananthan

Proceedings Volume 4454, (2001) https://doi.org/10.1117/12.448162

KEYWORDS: Arsenic, Annealing, Mercury cadmium telluride, Mercury, Doping, Temperature metrology, Magnetism, Nonmetals, Chemical species, Mid-IR

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Proceedings Article | 12 November 2001 Paper

Hg1-xCdxTe(112) nucleation on silicon composite substrates

Paul Boieriu, G. Brill, Y. Chen, Silviu Velicu, Nibir Dhar

Proceedings Volume 4454, (2001) https://doi.org/10.1117/12.448190

KEYWORDS: Mercury cadmium telluride, Long wavelength infrared, Mid-IR, Mercury, Tellurium, Information operations, Silicon, Composites, Diodes, Doping

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Showing 5 of 13 publications

Conference Committee Involvement (11)

Energy Harvesting and Storage: Materials, Devices, and Applications XIV

22 April 2024 | National Harbor, Maryland, United States

Energy Harvesting and Storage: Materials, Devices, and Applications XIII

2 May 2023 | Orlando, Florida, United States

Energy Harvesting and Storage: Materials, Devices, and Applications XII

5 April 2022 | Orlando, Florida, United States

Energy Harvesting and Storage: Materials, Devices, and Applications XI

12 April 2021 | Online Only, Florida, United States

Energy Harvesting and Storage: Materials, Devices, and Applications X

27 April 2020 | Online Only, California, United States

Showing 5 of 11 Conference Committees

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