We present a new-generation atomic layer deposition (ALD) technology that revolutionizes the production of conformal optical coatings: the spatial ALD. In spatial ALD, the substrate is rotated across successive process zones to achieve ultra-fast and high-precision thin film deposition. We present our latest results obtained with our novel C2R spatial ALD system, including the fabrication of SiO2, Ta2O5 and Al2O3 with deposition rates reaching > 1 µm/h. We also show that these materials exhibit low surface roughness (<1 Å RMS), low optical loss (<10 ppm @ 1064 nm), excellent uniformity (< 2% over 200 mm) and high damage threshold (up to 40 J/cm2).
With more than 40 years of experience in ALD and thin film deposition technology, Beneq has developed a new-generation ALD technology that revolutionizes high volume manufacturing of plasma-enhanced thin films: the spatial ALD. In spatial ALD, the substrate is rotated across successive process zones to achieve ultra-fast and high-precision thin film deposition. In this work, we present the latest results obtained with the novel Beneq C2R spatial ALD system, including the fabrication of SiO2, Ta2O5 and Al2O3 with deposition rates reaching > 1 µm/h on 200 mm wafers. Ultimately, our technology overcomes the challenges of traditional ALD and paves the way for the large volume production of optical components on the most challenging surfaces found in the industry.
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