This paper reviews arsenic (As) dopant activation processes in the various forms of epitaxial MCT. Extrinsic doping of
MCT is an important part of MCT technology and As doping is preferred as it is a shallow acceptor dopant with low
diffusivity and 100% activation can be achieved under the correct growth and/or post-growth annealing conditions. It is,
however, amphoteric so that under Te-rich growth conditions it can be incorporated as a donor (AsHg) and under metal-rich
conditions as an acceptor (As'Te). For As concentrations up to ~ 2 × 1018 cm-3 the amphoteric model provides a
satisfactory basis for explaining the behavior on annealing layers at temperatures above ~ 250 oC. Under Te-rich
conditions in LPE- and MBE-grown layers can be either compensated n-type or the As can be inactive. The quantitative
model of Schaake is used to obtain an expression for the activation anneal time in terms of As concentration, layer
thickness, composition and temperature. Layers grown by MOVPE can show up to 100% acceptor activation if the
stoichiometric conditions during the CdTe growth cycle of the interdiffused multilayer (IMP) process are maintained as
metal-rich. In as-grown MBE layers the evidence indicates that As is incorporated in the form of tetramers that can
dissociate at higher temperatures. The issue of establishing whether layers are electrically intrinsic at the annealing
temperatures used to activate the As acceptor in LPE and MBE layers is also discussed.
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