Dr. Ping-Hung Lu Profile

Dr. Ping-Hung Lu

Senior Research & Development Manager at EMD Electronics

SPIE Involvement:

Author

Publications (37)

Proceedings Article | 9 April 2024 Poster + Paper

Negative tone i-line photoresist with controlled undercut profile designed for metal deposition to form metal interconnects

Anupama Mukherjee, Medhat Toukhy, Ping-Hung Lu, Chunwei Chen, Tomotsugu Yano

Proceedings Volume 12957, 129571N (2024) https://doi.org/10.1117/12.3009919

KEYWORDS: Metals, Photoresist materials, Sputter deposition, Ions, Quenching, Photoresist processing, Photoacid generators, Industry, Polymers, Semiconducting wafers

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Proceedings Article | 1 May 2023 Poster + Paper

Positive tone i-line photoresist with controlled undercut profile for advanced packaging

Walter Weihong Liu, Chunwei Chen, Ping-Hung Lu, SookMee Lai, Yoshiharu Sakurai

Proceedings Volume 12498, 124981K (2023) https://doi.org/10.1117/12.2657694

KEYWORDS: Photoresist materials, Copper, Semiconducting wafers, Film thickness, Advanced packaging, Metals, Plating, Baking, Silicon, Photoresist processing

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Proceedings Article | 1 April 2009 Paper

Reworkable spin-on trilayer materials: optimization of rework process and solutions for manufacturability

Ruzhi Zhang, Allen Timko, John Zook, Yayi Wei, Lyudmila Pylneva, Yi Yi, Chenghong Li, Hengpeng Wu, Dalil Rahman, Douglas McKenzie, Clement Anyadiegwu, Ping-Hung Lu, Mark Neisser, Ralph Dammel, Ron Bradbury, Timothy Lee

Proceedings Volume 7273, 72732O (2009) https://doi.org/10.1117/12.814708

KEYWORDS: Semiconducting wafers, Silicon, Coating, Inspection, Manufacturing, Chemistry, Fourier transforms, Defect inspection, Polymers, Photoresist materials

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Trilayer stacks with alternating etch selectivity were developed and extensively investigated for high NA immersion lithography at 32nm node and beyond. The conveyance of pattern transfer function from photoresist to Si-containing bottom anti-reflective coating (Si-BARC) and carbonrich underlayer hard-mask (UL) elegantly solved the small etch budget issue for ultra-thin photoresists in immersion lithography. However, due to the hybrid nature of Si-BARC, many different behaviors were observed in comparison to conventional BARC. Lithographic performance, stability, and reworkability were among the most challenging issues for trilayer scheme. Despite of the rapid improvement in lithographic performance and stability of trilayer materials reported by several papers, the rework and cleaning of trilayer materials by wet chemistry remained a challenging problem for manufacturability. The dual function requirement of reflection control and pattern transfer (i.e. hard-masking) for spin-on Si-BARC mandates hybrid materials. Si-BARC containing both organic moiety and inorganic backbone were extensively studied and demonstrated excellent performance. However, the hybrid nature of Si-BARC necessitates the revisit of different wet chemistries and process adjustment is essential to achieve desirable results. In addition, the similarity in chemical structures between Si-BARC and low-κ dielectrics demands subtle rework differentiation by wet chemistry from a chemistry point of view. In our development, we strived to identify rework solutions for trilayer materials in both front-end-of-line (FEOL) and back-end-of-line (BEOL) applications. Rework solutions including diluted HF, Piranha, and low-κ compatible strippers were extensively investigated. The optimization of solution mixture ratios and processing conditions was systematically studied. Thorough defect inspection after rework was performed to ensure the readiness for manufacturability. Extensive Piranha rework study on stack wafers and monitor wafers were carried out and excellent results are reported.

Proceedings Article | 1 April 2009 Paper

Radiation sensitive developable bottom anti-reflective coatings (DBARC): recent results

Francis Houlihan, Alberto Dioses, Takanori Kudo, Meng Li, Lin Zhang, Sumathy Vasanthan, Srinivasan Chakrapani, Deepa Parthasarathy, Charito Antonio, Edward Ng, Ping-Hung Lu, Mark Neisser, Munirathna Padmanaban

Proceedings Volume 7273, 727316 (2009) https://doi.org/10.1117/12.816375

KEYWORDS: Prototyping, Polymers, Binary data, Fourier transforms, Bottom antireflective coatings, Arsenic, Plasma etching, Head-mounted displays, Electroluminescence, Coating

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Proceedings Article | 4 December 2008 Paper

Spin-on trilayer scheme: enabling materials for extension of ArF immersion lithography to 32nm node and beyond

Ruzhi Zhang, Allen Timko, Lyudmila Pylneva, Jennifer Loch, Hengpeng Wu, David Abdallah, Richard Collett, Yayi Wei, Dalil Rahman, Douglas McKenzie, Ping-Hung Lu, Mark Neisser

Proceedings Volume 7140, 71402T (2008) https://doi.org/10.1117/12.804748

KEYWORDS: Silicon, Etching, Reflectivity, Semiconducting wafers, Polymers, Lithography, Photoresist materials, Immersion lithography, Coating, Fourier transforms

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Proceedings Article | 15 April 2008 Paper

Etching spin-on trilayer masks

David Abdallah, Shinji Miyazaki, Aritaka Hishida, Allen Timko, Douglas McKenzie, Dalil Rahman, WooKyu Kim, Lyudmila Pylneva, Hengpeng Wu, Ruzhi Zhang, Ping-Hung Lu, Mark Neisser, Ralph Dammel

Proceedings Volume 6923, 69230U (2008) https://doi.org/10.1117/12.772691

KEYWORDS: Etching, Oxygen, Carbon, Semiconducting wafers, Reactive ion etching, Photomasks, Photoresist materials, Fourier transforms, Silicon, Lithography

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Proceedings Article | 15 April 2008 Paper

Second-generation radiation sensitive 193-nm developable bottom antireflective coatings (DBARC): recent results

Francis Houlihan, Alberto Dioses, Lin Zhang, Joseph Oberlander, Alexandra Krawicz, Sumathy Vasanthan, Meng Li, Yayi Wei, PingHung Lu, Mark Neisser

Proceedings Volume 6923, 692330 (2008) https://doi.org/10.1117/12.781587

KEYWORDS: Reflectivity, Polymers, Fourier transforms, Bottom antireflective coatings, Plasma etching, Coating, Silicon, Reticles, Plasma, Prototyping

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Proceedings Article | 2 April 2007 Paper

Spin-on trilayer approaches to high NA 193nm lithography

D. Abdallah, D. McKenzie, A. Timko, A. Dioses, F. Houlihan, D. Rahman, S. Miyazaki, R. Zhang, W. Kim, H. Wu, L. Pylneva, P.-H. Lu, M. Neisser, R. Dammel, J. Biafore

Proceedings Volume 6519, 65190M (2007) https://doi.org/10.1117/12.712700

KEYWORDS: Silicon, Etching, Fourier transforms, Carbon, Lithography, Antireflective coatings, Reflectivity, Semiconducting wafers, Photomasks, Silicon carbide

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Proceedings Article | 2 April 2007 Paper

Second-generation radiation sensitive developable bottom anti-reflective coatings (DBARC) and implant resists approaches for 193-nm lithography

Francis Houlihan, Alberto Dioses, Medhat Toukhy, Andrew Romano, Joseph Oberlander, HengPeng Wu, Salem Mullen, Alexandra Krawicz, PingHung Lu, Mark Neisser

Proceedings Volume 6519, 65190L (2007) https://doi.org/10.1117/12.713436

KEYWORDS: Arsenic, Resistance, Fluorine, Polymers, Prototyping, Lithography, Photoresist processing, Semiconducting wafers, Fourier transforms, Bottom antireflective coatings

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Proceedings Article | 23 March 2007 Paper

Radiation sensitive developable bottom anti-reflective coating (DBARC) for 193nm lithography: first generation

Medhat Toukhy, Joseph Oberlander, Salem Mullen, PingHung Lu, Mark Neisser

Proceedings Volume 6519, 651936 (2007) https://doi.org/10.1117/12.717114

KEYWORDS: Polymers, Coating, 193nm lithography, Lithography, Photoresist processing, Bottom antireflective coatings, Semiconducting wafers, Standards development, Image processing, Plasma etching

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Proceedings Article | 23 March 2007 Paper

Development of nanocomposite resists with high plasma etch resistance

Chunwei Chen, Hong Zhuang, Ping-Hung Lu, Mark Neisser, Georg Pawlowski

Proceedings Volume 6519, 65192E (2007) https://doi.org/10.1117/12.711601

KEYWORDS: Silica, Etching, Nanocomposites, Photoresist materials, Plasma etching, Nanoparticles, Plasma, Resistance, Deep reactive ion etching, Particles

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Proceedings Article | 29 March 2006 Paper

The effects of etch chemistry on the etch rates of ArF BARC products

Hong Zhuang, Dave Abdallah, Zhong Xiang, Hengpeng Wu, Jianhui Shan, Ping-Hung Lu, Mark Neisser, Eugene Karwacki, Bing Ji, Peter Badowski

Proceedings Volume 6153, 61530N (2006) https://doi.org/10.1117/12.657128

KEYWORDS: Etching, Reactive ion etching, Chemistry, Polymers, Anisotropic etching, Ions, Semiconducting wafers, Photoresist materials, Oxygen, Gases

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Proceedings Article | 4 May 2005 Paper

A comparison of new thick photoresists for solder bumping

Warren Flack, Ha-Ai Nguyen, Mark Neisser, Ernesto Sison, Ping Hung Lu, Bob Plass, Toshimichi Makii, Yoshio Murakami

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.598469

KEYWORDS: Photoresist materials, Semiconducting wafers, Electroplating, Chemistry, Photoresist developing, Lithography, Reticles, Scanning electron microscopy, Standards development, Packaging

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The performance requirements for ultra-thick photoresists are rapidly increasing with the dramatic growth in lithographic applications that require electroplating processes. Two of the main applications for ultra-thick photoresists are advanced packaging and nanotechnology (MEMS). Flipchip packaging has become widely adopted to address electrical device performance and chip form factor considerations. The growth in the nanotechnology market is driven by a wide range of products, which include accelerometers, ink jet print heads, biomedical sensors and optical switches. The requirements of thick photoresists for solder electroplating are significantly different from typical thin photoresists used in front end of line applications. As the photoresist becomes thicker, processing times increase for many process steps. Photospeed gets slower due to the requirements for more chemical reactions per area of coating. Coating uniformity and edge bead control also become more difficult as photoresist films get thicker and time delay issues between process steps can arise. This result has led to the requirement for special photoresist formulations for thick photoresist films. These are traditionally positive tone DNQ-Novolak materials such as AZ 50XT. Such materials can be designed to work for a particular range of thicknesses, but as the desired thicknesses increases the processing times can become very long for high volume manufacturing. Many new bumping schemes require photoresists in a 60 to 70 μm thickness range. While DNQ-Novolak chemistry can work, there is a desire for faster alternatives to improve total cost of ownership (COO) of the lithography cell. In order to have fast photospeeds and reasonable processing times a chemistry that is very photo efficient is needed. Negative tone cross linking chemistries, which can give tens of thousands of chemical events for one photochemical event, provide excellent photospeed and process times. Positive tone chemically amplified photoresist provide hundreds or thousands of chemical events per photochemical event. They are somewhat slower in photospeed than free radical materials, but still provide reasonable photospeeds. This paper compares the lithography and processing performance of these two newer types of thick film chemistries with the performance of a state of the art DNQ-Novolak thick film photoresist. The lithographic performance of these three ultra-thick positive photoresists were optimized to control critical dimensions (CD), sidewall angles and aspect ratios. The experimental results includes process latitude studies, electroplating performance and stripping performance. The general result is that negative free radical chemistry has the edge in photo-speed and processing times, but positive photoresist is better for stripping and perhaps for process integration.

Proceedings Article | 4 May 2005 Paper

All i-line lift-off T-gate process and materials

Medhat Toukhy, Ping-Hung Lu, Salem Mullen

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.602636

KEYWORDS: Photoresist processing, Metals, Coating, Materials processing, Gallium arsenide, Diffusion, Semiconducting wafers, Lithography, Fourier transforms, Photomasks

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Proceedings Article | 14 May 2004 Paper

High-temperature negative resist tunable for new lift-off applications

Medhat Toukhy, PingHung Lu, Kate Kao, Robert Plass, Ching-Hui Chen, Gerald Faerber

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.537561

KEYWORDS: Photoresist processing, Metals, Semiconducting wafers, Lithography, 193nm lithography, Deep ultraviolet, Organic light emitting diodes, Deposition processes, Resistance, Chemistry

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Proceedings Article | 12 June 2003 Paper

Optimized thick film processing for bumping layers

Stanley Wanat, Robert Plass, Ernesto Sison, Hong Zhuang, Ping-Hung Lu, Clifford Hamel, Jeffrey Guevremont

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485181

KEYWORDS: Semiconducting wafers, Connectors, Thin film coatings, Metals, Photoresist processing, Plating, Solids, Photoresist developing, Copper, Photoresist materials

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Proceedings Article | 12 June 2003 Paper

TMAH soak process optimization with DNQ positive resist for lift-off applications

Salem Mullen, Medhat Toukhy, Ping-Hung Lu, Sunit Dixit, Paul Sellers

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485198

KEYWORDS: Photoresist processing, Standards development, Semiconducting wafers, Floods, Photoresist developing, Metals, Scanning electron microscopy, Photoresist materials, Coating, Metrology

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Proceedings Article | 24 July 2002 Paper

High resolution negative i-line resist and process for metal lift-off applications

Medhat Toukhy, Salem Mullen, Ping-Hung Lu, Mark Neisser

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474287

KEYWORDS: Absorption, Photoresist processing, Metals, Polymers, Resolution enhancement technologies, Semiconducting wafers, Image processing, Gallium arsenide, Lithography, Resist chemistry

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Proceedings Article | 23 June 2000 Paper

Studies directed to the design and development of a high-energy implant resist

Warren Montgomery, PingYong Xu, PingHung Lu, Salem Methsun, Ralph Dammel, Nara Meyyappan, Noriyuki Kobayashi, David Pritchard

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388291

KEYWORDS: Photoresist materials, Semiconducting wafers, Ions, Ion beams, Lithography, Photoresist processing, Ultraviolet radiation, Photoresist developing, Arsenic, Metals

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Proceedings Article | 11 June 1999 Paper

Performance impact of novel polymeric dyes in photoresist applications

Ping-Hung Lu, Salem Mehtsun, John Sagan, Jianhui Shan, Eleazar Gonzalez, Shuji Ding, Dinesh Khanna

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350175

KEYWORDS: Polymers, Semiconducting wafers, Photoresist materials, Reflectivity, Chromophores, Quartz, Absorption, Lithography, Thin films, Dysprosium

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