A series of self-organized InAs/GaAs quantum dots with spacer layer under different thermal-treat
(annealing) temperature and environments were prepared by molecular beam epitaxy. They were investigated
by atomic force microscope and temperature-dependent photoluminescence (PL). Results showed that the
sample annealed at lower temperature has lager size quantum dots and smaller density of quantum dots. The
size of quantum dots is getting smaller and the density of quantum dots is getting larger as the annealing
temperature increase. Two broad PL peaks are attributed to the combined size distribution of the bimodal
quantum dots.
Surface and material properties of dielectric Ga2O3 thin films deposited onto GaAs substrate with different
annealing temperature were studied via a variety of techniques, including X-ray diffraction (XRD), X-ray
Photoelectron Spectroscopy (XPS), scanning electron microscope (SEM) and energy dispersive X-ray
spectroscopy (EDX). The effects of annealing are investigated. The increase of ratio of oxygen to gallium
assuredly as the annealing temperature increased was found. The relationship between the interface quality
and annealing temperature is identified.
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