Perovskite is an emerging low-cost and high-quality material, that show significant potential to revolutionize photovoltaic and lighting sectors in Organic and Large Area Electronics (OLAE) devices. Their simple and inexpensive processing methods, such as solution-based synthesis and printing, make them attractive for flexible and lightweight electronic devices. In this work, perovskite suitability has been tested for telecommunication applications, particularly Li-Fi links. The perovskite devices were integrated into a telecom system, including an FPGA handling signal processing, LED array, analog transmitter circuitry, and driving electronics for the perovskite photodiode. 4-PPM modulation format has been adopted due to resilience in low SNR. The purpose is to thoroughly characterize the setup to assess the suitability of perovskite devices for Li-Fi scenarios or combined PV and Li-Fi usage. This research aims to advance the application of perovskites in telecommunication and expand their potential in various electronic devices.
Zinc and tin oxides are both earth-abundant materials with demonstrated applicability as electrodes in several optoelectronic devices. The presence of grain boundaries in these polycrystalline films generally limits the electron mobility. By a combinatorial study of ZnO and SnO2, a transparent conducting amorphous zinc tin oxide (ZTO) electrode, free of grain boundaries, with a dense (void-free) microstructure has been developed. We show how tuning the stoichiometry (Zn4.5Sn30.2O65.3) and film’s microstructure during sputtering deposition, allows achieving electron mobilities up to 25 cm2/Vs and free carrier concentrations of ~ 7 x 1019 cm-3. The effects of post-deposition thermal treatments are furthermore studied. The ZTO films keep their dense amorphous microstructure upon annealing up to 500°C, as confirmed by cross-section TEM and XRD, while presenting a clear improvement in electron mobility up to 35 cm2/Vs when annealed in oxygen-rich atmospheres.
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