MOCVD technology has widely grown compound semiconductors for various applications, like Power/RF GaN and micro-LEDs. Precise control of wafer uniformity, defect density, and run-to-run consistency is essential for optimal results and reducing COO.
High-speed rotation vertical reactors, with uniform deposition capabilities, enable a wide process window. Implementing these in a single wafer configuration enhances film uniformity through concentric temperature and flow patterns. The Propel® MOCVD 300mm single wafer reactor made 300mm semiconductor fabrication accessible to the nitride material system, critical for RF and micro-LEDs.
This presentation covers latest Propel® 300mm MOCVD single wafer reactor advancements, including uniformity, repeatability, crystal quality for GaN/Si, GaN HEMT structure characterization, and GaN on Si LED wavelength uniformity. We'll discuss recent progress in red InGaN LED performance on 6” sapphire and 8” Si wafers, highlighting how Propel® MOCVD enhances high indium composition materials with Turbodisc® single wafer reactor technology.
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