Multi-wavelength laser sources on silicon photonics can enable large spectral coverage for DWDM optical I/O links and leverage the scalability of a CMOS compatible process simultaneously. In this work, we report a laser array of four four-wavelength distributed feedback lasers that produce in total sixteen wavelength channels simultaneously with a wavelength spacing of 200 GHz and output power of 17 dBm per laser. We show integrated III-V/Si hybrid lasers on the same die with wafer-level bonded epitaxial III-V layer that spans a spectral coverage of 17 nm through the 16 wavelength channels. We also measured the relative intensity noise (RIN) of all sixteen wavelength channels to be under -135 dB/Hz and the Lorentzian linewidth to be less than 300 kHz.
Multi-wavelength laser sources have gained significant interest for future high-bandwidth density DWDM optical links, enabling improved energy efficiency and bandwidth scaling. In this work, we present an integrated III-V/Si hybrid four-wavelength DFB laser with 200 GHz wavelength spacing and <10 dBm output power per wavelength. The wavelength spacing and total output power variations are <±25 GHz and <1 dB, respectively, for an ambient temperature change of 30°C. We also measured the relative intensity noise (RIN) and Lorentzian linewidth of the laser to be <-135 dB/Hz and <300 kHz, respectively.
Silicon photonics has drawn a lot of attention over the last decades, mainly in telecom-related application fields where the nonlinear optical properties of silicon are ignored or minimized. However, silicon’s high χ(3) Kerr optical nonlinearity in sub-micron-scale high-confinement waveguides can enable significant improvements in traditional nonlinear devices, such as for wavelength conversion, and also enable some device applications in quantum optics or for quantum key distribution. In order to establish the viability of silicon photonics in practical applications, some big challenges are to improve the optical performance (e.g., optimize nonlinearity or minimize loss) and integration of optics with microelectronics. In this context, we discuss how electronic PIN diodes improve the performance of wavelength conversion in a microring resonator based four-wave mixing device, which achieves a continuous-wave four-wave mixing conversion efficiency of −21.3 dB at 100 mW pump power, with enough bandwidth for the wavelength conversion of a 10 Gbps signal. In the regime of quantum optics, we describe a coupled microring device that can serve as a tunable source of entangled photon pairs at telecommunications wavelengths, operating at room temperature with a low pump power requirement. By controlling either the optical pump wavelength, or the chip temperature, we show that the output bi-photon spectrum can be varied, with implications on the degree of frequency correlation of the generated quantum state.
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