This paper takes published improvements in fabricator metrics that result from Advanced Process Control,and, applying an International SEMATECH cost model to the results, quantifies the expected economic
impact. By converting the improvements in factory metrics to dollars, they can be compared. The benefits are given by equipment type, and by factory benefit mechanism. The majority of these calculations are
based on Run-to-Run control.
KEYWORDS: Semiconducting wafers, Control systems, Sensors, Semiconductors, Manufacturing, Data acquisition, Optical inspection, Scanning electron microscopy, High volume manufacturing, Metrology
We will discuss Advanced Micro Devices's (AMD) Fault Detection and Classification (FDC) program strategy and our six-step project template that we have identified that must be addressed for any successful FDC effort. We will discuss the recent development and implementation of a wafer-level FDC system on a TEL CLEAN TRAC ACT 8 photo track system in AMD's Fab25, a high volume microprocessor factory. We will present our approach to designing and implementing this FDC system and demonstrate its ability to automatically identify specific wafers within a lot that require manual review. Upon manual review, the decision can be made to rework the specific wafers or the lot.
Scatterometry is a non-destructive optical metrology based on the analysis of light scattered form a periodic sample. In this research angular scatterometry measurements were performed on three wafers processed using shallow trench isolation (STI) technology. The periodic features that were measured on these wafers were composite etched gratings comprised of SiN on oxide on Si. The wafers were processed at three different etch times in order to generate different etch depths (shallow, nominal and deep). It was at this point in the process that the scatterometry measurements were performed. The scatterometry model was comprised of four parameters: Si thickness, SiN thickness, linewidth and sidewall angle. For comparison purposes measurements were also performed using a critical dimension scanning electron microscope (CD-SEM), a cross-section SEM and an atomic force microscope (AFM). The results show good agreement between the scatterometry measurements and the other technologies.
Optical emission spectroscopy (OES) data for 495 wavelengths and wafer measurements (pre- and post-oxide film thickness) from a commercial etch tool were collected for 18 oxide wafers to explore the feasibility of using OES as an in-situ sensor to estimate average oxide etch rate. A variable selection method is proposed based on the principle of partial least square (PLS) regression, which select several most informative wavelengths to build ordinary least square (OLS) regression models. Compared with the PLS models, it is found that OLS regression models based on selected wavelengths are more robust.
Conference Committee Involvement (1)
Process and Materials Characterization and Diagnostics in IC Manufacturing II
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.