Dr. Richard E. Wistrom Profile

Dr. Richard E. Wistrom

Process Engineer at GLOBALFOUNDRIES Inc

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Publications (16)

Proceedings Article | 13 July 2017 Paper

Etch bias inversion during EUV mask ARC etch

Alexander Lajn, Haiko Rolff, Richard Wistrom

Proceedings Volume 10454, 104540L (2017) https://doi.org/10.1117/12.2278718

KEYWORDS: Oxygen, Process control, Chemistry, Polymers, Extreme ultraviolet lithography, Photoresist processing, High volume manufacturing, Etching, Extreme ultraviolet, Photomasks, Photomask technology

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Proceedings Article | 4 October 2016 Paper

7-nm e-beam resist sensitivity characterization

Amy Zweber, Yusuke Toda, Yoshifumi Sakamoto, Thomas Faure, Jed Rankin, Steven Nash, Masayuki Kagawa, Michael Fahrenkopf, Takeshi Isogawa, Richard Wistrom

Proceedings Volume 9985, 99851J (2016) https://doi.org/10.1117/12.2243683

KEYWORDS: Photomasks, Line edge roughness, Electron beam lithography, Electrons, SRAF, Extreme ultraviolet, Image resolution, EUV optics, Inspection, Manufacturing

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Proceedings Article | 10 May 2016 Paper

Development of a new high transmission phase shift mask technology for 10 nm logic node

Thomas Faure, Yoshifumi Sakamoto, Yusuke Toda, Karen Badger, Kazunori Seki, Mark Lawliss, Takeshi Isogawa, Amy Zweber, Masayuki Kagawa, Richard Wistrom, Yongan Xu, Granger Lobb, Ramya Viswanathan, Lin Hu, Yukio Inazuki, Kazuhiro Nishikawa

Proceedings Volume 9984, 998402 (2016) https://doi.org/10.1117/12.2241480

KEYWORDS: Photomasks, Phase shifts, Logic, Lithography, Chromium, Inspection, Opacity, SRAF, Etching, Attenuators

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Proceedings Article | 1 April 2016 Paper

Lithographic qualification of high-transmission mask blank for 10nm node and beyond

Yongan Xu, Tom Faure, Ramya Viswanathan, Granger Lobb, Richard Wistrom, Sean Burns, Lin Hu, Ioana Graur, Ben Bleiman, Dan Fischer, Yann Mignot, Yoshifumi Sakamoto, Yusuke Toda, John Bolton, Todd Bailey, Nelson Felix, John Arnold, Matthew Colburn

Proceedings Volume 9780, 978006 (2016) https://doi.org/10.1117/12.2219778

KEYWORDS: Photomasks, Semiconducting wafers, Optical proximity correction, Lithography, Transmittance, Resolution enhancement technologies, Printing, SRAF, Critical dimension metrology, Phase shifts

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Proceedings Article | 23 October 2015 Paper

Photomask etch system and process for 10nm technology node and beyond

Madhavi Chandrachood, Michael Grimbergen, Keven Yu, Toi Leung, Jeffrey Tran, Jeff Chen, Darin Bivens, Rao Yalamanchili, Richard Wistrom, Tom Faure, Peter Bartlau, Shaun Crawford, Yoshifumi Sakamoto

Proceedings Volume 9635, 963516 (2015) https://doi.org/10.1117/12.2199030

KEYWORDS: Etching, Photomasks, Opacity, Chromium, Critical dimension metrology, Process control, Phase shifts, Photoresist processing, Line edge roughness, Phase modulation

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Proceedings Article | 9 September 2013 Paper

Controlling the sidewall angle of advanced attenuated phase-shift photomasks for 14nm and 10nm lithography

Richard Wistrom, Yoshifumi Sakamoto, Jeffery Panton, Thomas Faure, Takeshi Isogawa, Anne McGuire

Proceedings Volume 8880, 88800W (2013) https://doi.org/10.1117/12.2026853

KEYWORDS: Etching, Photomasks, Atomic force microscopy, Scanning electron microscopy, Chromium, 3D metrology, Lithography, Data modeling, Quartz, Plasma

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Proceedings Article | 14 October 2011 Paper

High resolution mask process and substrate for 20nm and early 14nm node lithography

Tom Faure, Satoshi Akutagawa, Karen Badger, Louis Kindt, Jun Kotani, Takashi Mizoguchi, Satoru Nemoto, Kazunori Seki, Tasuku Senna, Richard Wistrom, Shinich Igarashi, Yukio Inazuki, Kazuhiro Nishikawa, Hiroki Yoshikawa

Proceedings Volume 8166, 816617 (2011) https://doi.org/10.1117/12.898889

KEYWORDS: Photomasks, SRAF, Opacity, Inspection, Chromium, Etching, Optical proximity correction, Photoresist processing, Resistance, Lithography

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The lithography challenges posed by the 20 nm and 14 nm nodes continue to place strict minimum feature size requirements on photomasks. The wide spread adoption of very aggressive Optical Proximity Correction (OPC) and computational lithography techniques that are needed to maximize the lithographic process window at 20 nm and 14 nm groundrules has increased the need for sub-resolution assist features (SRAFs) down to 50 nm on the mask. In addition, the recent industry trend of migrating to use of negative tone develop and other tone inversion techniques on wafer in order to use bright field masks with better lithography process window is requiring mask makers to reduce the minimum feature size of opaque features on the reticle such as opaque SRAFs. Due to e-beam write time and pattern fidelity requirements, the increased use of bright field masks means that mask makers must focus on improving the resolution of their negative tone chemically amplified resist (NCAR) process. In this paper we will describe the development and characterization of a high resolution bright field mask process that is suitable for meeting 20 nm and early 14 nm optical lithography requirements. Work to develop and optimize use of an improved chrome hard mask material on the thin OMOG binary mask blank¹ in order to resolve smaller feature sizes on the mask will be described. The improved dry etching characteristics of the new chrome hard mask material enabled the use of a very thin (down to 65 nm) NCAR resist. A comparison of the minimum feature size, linearity, and through pitch performance of different NCAR resist thicknesses will also be described. It was found that the combination of the improved mask blank and thinner NCAR could allow achievement of 50 nm opaque SRAFs on the final mask.. In addition, comparisons of the minimum feature size performance of different NCAR resist materials will be shown. A description of the optimized cleaning processes and cleaning durability of the 50 nm opaque SRAFs will be provided. Furthermore, the defect inspection results of the new high resolution mask process and substrate will be shared.

Proceedings Article | 14 October 2011 Paper

Dry etching performance of advanced EUV mask blanks

John Whang, Madhavi Chandrachood, Emily Gallagher, Tom Faure, Michael Grimbergen, Shaun Crawford, Keven Yu, T. Y .B Leung, Richard Wistrom, Amitabh Sabharwal, Jeff Chen, Banqiu Wu

Proceedings Volume 8166, 81661W (2011) https://doi.org/10.1117/12.898815

KEYWORDS: Etching, Photomasks, Extreme ultraviolet, Ruthenium, Line edge roughness, Multilayers, Binary data, Manufacturing, Extreme ultraviolet lithography, Tantalum

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Proceedings Article | 25 September 2010 Paper

Development and characterization of a thinner binary mask absorber for 22-nm node and beyond

Tom Faure, Karen Badger, Louis Kindt, Yutaka Kodera, Toru Komizo, Shinpei Kondo, Takashi Mizoguchi, Satoru Nemoto, Kazunori Seki, Tasuku Senna, Richard Wistrom, Amy Zweber, Kazuhiro Nishikawa, Yukio Inazuki, Hiroki Yoshikawa

Proceedings Volume 7823, 78230J (2010) https://doi.org/10.1117/12.864130

KEYWORDS: Photomasks, Etching, Binary data, Opacity, Inspection, Image processing, Photoresist processing, Dry etching, Mask making, Thin films

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Proceedings Article | 11 May 2009 Paper

Etch characterization of binary mask dependence on mask material and resist thickness for 22nm mask fabrication

Satoru Nemoto, Thomas Faure, Richard Wistrom, Shaun Crawford, Gary Reid, Peter Bartlau, Toru Komizo, Amy Zweber

Proceedings Volume 7379, 737907 (2009) https://doi.org/10.1117/12.824248

KEYWORDS: Etching, Photomasks, Opacity, Critical dimension metrology, Dry etching, Binary data, Photoresist processing, Mask making, Standards development, Quartz

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Proceedings Article | 17 October 2008 Paper

Integrating Cr and MoSi etch for optimal photomask critical dimension uniformity and phase uniformity

Richard Wistrom, Toru Komizo, Satoru Nemoto, A. Gary Reid

Proceedings Volume 7122, 71220F (2008) https://doi.org/10.1117/12.801570

KEYWORDS: Etching, Chromium, Photomasks, Plasma etching, Quartz, Phase shift keying, Phase shifts, Plasma, Photoresist materials, Critical dimension metrology

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Proceedings Article | 17 October 2008 Paper

Characterization of binary and attenuated phase shift mask blanks for 32nm mask fabrication

Thomas Faure, Emily Gallagher, Michael Hibbs, Louis Kindt, Ken Racette, Richard Wistrom, Amy Zweber, Alfred Wagner, Yasutaka Kikuchi, Toru Komizo, Satoru Nemoto

Proceedings Volume 7122, 712209 (2008) https://doi.org/10.1117/12.801950

KEYWORDS: Photomasks, Binary data, Opacity, Chromium, Etching, Photoresist processing, Critical dimension metrology, Quartz, Phase shifts, Mask making

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Proceedings Article | 30 October 2007 Paper

Development and characterization of a new low stress molybdenum silicide film for 45 nm attenuated phase-shift mask manufacturing

Thomas Faure, Emily Gallagher, Louis Kindt, Steven Nash, Ken Racette, Richard Wistrom, Toru Komizo, Yasutaka Kikuchi, Satoru Nemoto, Yushin Sasaki, Atsushi Kominato, Toshiyuki Suzuki

Proceedings Volume 6730, 67300C (2007) https://doi.org/10.1117/12.748664

KEYWORDS: Photomasks, Etching, Distortion, Manufacturing, Line edge roughness, Photoresist processing, Dry etching, Image processing, Transmittance, Opacity

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Proceedings Article | 30 October 2007 Paper

Characterizing photomask etch processes by phase component analysis (PCA)

Richard Wistrom, Toru Komizo, Michael Hibbs, Gary Reid

Proceedings Volume 6730, 673007 (2007) https://doi.org/10.1117/12.746421

KEYWORDS: Etching, Quartz, Photomasks, Chromium, Phase measurement, Principal component analysis, Diagnostics, Manufacturing, Molybdenum, Phase shifts

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Proceedings Article | 20 May 2006 Paper

Influence of the pellicle on final photomask flatness

Richard Wistrom, Dennis Hayden, Kenneth Racette, Monica Barrett, Andrew Watts

Proceedings Volume 6283, 628326 (2006) https://doi.org/10.1117/12.681775

KEYWORDS: Pellicles, Photomasks, Adhesives, Distortion, Manufacturing, Optics manufacturing, Optical lithography, Lithography, Optical mounts, Reticles

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Proceedings Article | 6 December 2004 Paper

Mask defect reduction through automated pellicle mounting

Richard Wistrom, Dennis Hayden, Timothy Neary

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569061

KEYWORDS: Pellicles, Photomasks, Inspection, Particles, Manufacturing, Adhesives, Chromium, Phase shifts, Fermium, Frequency modulation

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Showing 5 of 16 publications

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