Advanced AI systems require more exotic packaging solutions to increase performance and manage power loads. Packaging designers not only need increased interconnect density through pitch scaling, but also seek to print this advantage over areas beyond the capability of standard lithography. These demands call for innovations in materials, processes, integrations, and tools for packaging. In a bid to find solutions for finer L/S pattern in redistribution layers, photo-imageable polyimides (PIDs) from different vendors were tested for performance properties (resolution, dose to size, sidewall quality) using direct write exposure methods, and then assessed for compatibility in a dual damascene (DD) integration for FOWLP packaging.
InGaN based blue and green LEDs are quite attractive owing to their high efficiency, low power consumption, and high performance even at scaled dimensions. However, for red emission higher indium content in the QWs leads to poor performance due to increased strain in the structure. We will discuss a novel elastic strain relaxation technique using porous GaN pseudo-substrates which will allow enhanced indium uptake in the quantum wells for high-efficiency red InGaN micro-LEDs outperforming AlInGaP based micro-LEDs. Results including green and orange luminescence from micro-LEDs (<5 µm) fabricated on these pseudo-substrates will be discussed.
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