Dr. Salvador Mir Profile

Dr. Salvador Mir

at TIMA Lab

SPIE Involvement:

Author

Proceedings Article | 1 November 2012 Paper

Effects of doping concentrations on the photocurrent and dark current of a CMOS photodiode

Andrei Drӑgulinescu, Livier Lizarraga, Salvador Mir

Proceedings Volume 8411, 84112G (2012) https://doi.org/10.1117/12.966394

KEYWORDS: Doping, Photodiodes, Diffusion, CMOS sensors, Charge-coupled devices, CCD image sensors, Sensors, Active sensors, Diodes, Metals

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Proceedings Article | 31 May 2007 Paper

Defect and fault modelling of a CMOS n-diffusion photodiode

Andrei Dragulinescu, Livier Lizarraga, Salvador Mir, Gilles Sicard

Proceedings Volume 6635, 663517 (2007) https://doi.org/10.1117/12.742105

KEYWORDS: Photodiodes, CMOS sensors, Doping, Diodes, Charge-coupled devices, Modeling, Chemical elements, CCD image sensors, Data modeling, Optoelectronics

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Proceedings Article | 10 May 2007 Paper

Test measures evaluation for VCO and charge pump blocks in RF PLLs

Anna Asquini, Jean-Louis Carbonero, Salvador Mir

Proceedings Volume 6590, 65901A (2007) https://doi.org/10.1117/12.721819

KEYWORDS: Monte Carlo methods, Phase measurement, Device simulation, Analog electronics, Picosecond phenomena, System on a chip, Telecommunications, Sensors, VHF band, Oscillators

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Proceedings Article | 30 June 2005 Paper

Digital test of a sigma-delta modulator in a mixed-signal BIST architecture

Luis Rolindez, Salvador Mir, Guillaume Prenat

Proceedings Volume 5837, (2005) https://doi.org/10.1117/12.607615

KEYWORDS: Modulators, Binary data, Digital filtering, Optical filters, Digital electronics, Quantization, Analytical research, Electronic filtering, Power supplies, Sinc filters

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Proceedings Article | 19 April 2002 Paper

Behavioral modeling and simulation of a MEMS-based ultrasonic pulse-echo system

L. Rufer, C. Domingues, Salvador Mir

Proceedings Volume 4755, (2002) https://doi.org/10.1117/12.462809

KEYWORDS: Acoustics, Microelectromechanical systems, Resistors, Ultrasonics, Resistance, Transducers, Microsystems, Temperature metrology, Control systems, Modeling and simulation

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Proceedings Article | 5 April 2001 Paper

Self-testable CMOS thermopile-based infrared imager

Benoit Charlot, F. Parrain, Salvador Mir, Bernard Courtois

Proceedings Volume 4408, (2001) https://doi.org/10.1117/12.425341

KEYWORDS: Imaging systems, Infrared radiation, Infrared imaging, Thermography, Electronics, Resistors, Analog electronics, Sensors, Infrared detectors, Prototyping

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This paper describes a CMOS-compatible self-testable uncooled InfraRed (IR) imager that can be used in multiple applications such as overheating detection, night vision, and earth tracking for satellite positioning. The imager consists of an array of thermal pixels that sense an infrared radiation. Each pixel is implemented as a front-side bulk micromachined membrane suspended by four arms, each arm containing a thermopile made of Poly/Al thermocouples. The imager has a pixel self-test function that can be activated off-line in the field for validation and maintenance purposes, with an on-chip test signal generation that requires only slight modifications in the pixel design. The self-test of a pixel takes about 15 ms. The area overhead required by the test electronics does not imply any reduction of the pixel fill factor, since the electronics fits in the pixel silicon boundary. However, the additional self-test circuitry contributes to a small increase in the thermal conductance of a pixel due to the wiring of a heating resistor over the suspended arms. The self-test capability of the imager allows for a production test with a standard test equipment, without the need of special infrared sources and the associated optical equipment. A prototype with 8 X 8 pixels is currently in fabrication for validation of the self-test approach. In this prototype, each pixel occupies an area of 200 X 200 micrometer², with a membrane size of 90 X 90 micrometer² (fill factor of 0.2). Simulation results indicate a pixel thermal conductance of 22.6 (mu) W/K, giving a responsivity of 138 V/W, with a thermocouple Seebeck coefficient that has been measured at 248 (mu) V/K for the 0.6 micrometer CMOS technology used. The noise equivalent power (considering only Johnson noise in the thermopile) is calculated as 0.18 nW.H^-1/2 with a detectivity of 5.03 X 10⁷ cm.Hz^1/2.W^-1, in line with current state-of-the-art. Since the imager may need to measure irradiation intensities below 1(mu) W, with a pixel output voltage much smaller than 1 mV, the analog front-end electronics incorporated on the chip uses modulation and correlated-double-sampling to reduce the amplifier offset and the noise floor.

Proceedings Article | 10 April 2000 Paper

High-thermal-impedance beams for suspended MEMS

Salvador Mir, Benoit Charlot, F. Parrain, D. Veychard

Proceedings Volume 4019, (2000) https://doi.org/10.1117/12.382266

KEYWORDS: Microelectromechanical systems, Resistors, Amplifiers, Electronics, Control systems, Resistance, Capacitance, Convection, Antimony, Germanium

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Proceedings Article | 10 March 1999 Paper

Fault simulation of MEMS using HDLs

Benoit Charlot, Salvador Mir, Erika Cota, Marcelo Lubaszewski, Bernard Courtois

Proceedings Volume 3680, (1999) https://doi.org/10.1117/12.341215

KEYWORDS: Microelectromechanical systems, Resistors, Instrument modeling, Systems modeling, Finite element methods, Analog electronics, Failure analysis, Device simulation, Thermal modeling, Etching

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Proceedings Article | 10 March 1999 Paper

Fault modeling of electrostatic comb-drives for MEMS

Benoit Charlot, Spiridon Moussouris, Salvador Mir, Bernard Courtois

Proceedings Volume 3680, (1999) https://doi.org/10.1117/12.341226

KEYWORDS: Microelectromechanical systems, Computer aided design, Microresonators, Resonators, Analog electronics, Transducers, Systems modeling, Instrument modeling, 3D modeling, Motion models

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Showing 5 of 9 publications

Conference Committee Involvement (5)

VLSI Circuits and Systems VI

24 April 2013 | Grenoble, France

VLSI Circuits and Systems

18 April 2011 | Prague, Czech Republic

VLSI Circuits and Systems

4 May 2009 | Dresden, Germany

VLSI Circuits and Systems

2 May 2007 | Maspalomas, Gran Canaria, Spain

VLSI Circuits and Systems II

9 May 2005 | Sevilla, Spain

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