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Sanghak Kim

at Lam Research Corp.

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Proceedings Article | 10 April 2024 Presentation

Patterning-induced metal damage reduction using low energy radical source

Minbok Jung, Yong Hee Choi, Seung Park, Se Myoung Oh, Sanghak Kim, Jongjin Park, Sangjun Cho, Jeongyeon Seo, Chul Woong Lee, David Lo, Keun Hee Bai

Proceedings Volume 12958, 1295803 (2024) https://doi.org/10.1117/12.3009115

KEYWORDS: Metals, Resistance, Optical lithography, Ions, Transmission electron microscopy, Plasma, Oxygen, Oxides, Oxidation, Nanostructures

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In semiconductor manufacturing, the selective removal of the carbon mask after etching has become increasingly challenging with the introduction of Gate-All-Around (GAA) technologies. This transition has brought greater procedural complexity, necessitating more process steps to accommodate intricate and vertically structured designs. Consequently, there arises a need to reassess the appropriateness of traditional methods. Traditionally, the process relied on high RF power plasma to eliminate the carbon mask, resulting in the generation of large quantities of ions that could potentially compromise the integrity of thin film materials. As materials refine and designs require increased vertical scaling, associated risk factors are accentuated. Over-cleaning leads to ion damage, exemplifying the limitations in enhancing device performance. To overcome these challenges, an innovative selective mask removal (SMR) technology has been developed using Metastable Activated Radical Source (MARS). Utilizing MARS, radicals derived from hydrogen or oxygen exhibit lower energy levels, minimizing material damage on the wafer surface during the SMR process. This revolutionary technique significantly reduces the thickness of native oxide layers after SMR, lessening electrical resistance in critical processing steps and enhancing device performance. Furthermore, it enables improved surface passivation strategies, preventing the formation of native oxide and enabling multivalent passivation. These advancements mark a significant step in reducing pattern-induced damage in the GAA era, aligning with sustained progression in line with Moore's Law.

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