Dr. Scott J. Bukofsky Profile

Dr. Scott J. Bukofsky

Senior Engineering Manager at GlobalFoundries

SPIE Involvement:

Author

Proceedings Article | 21 March 2007 Paper

Improving the power-performance of multicore processors through optimization of lithography and thermal processing

A. Gabor, T. Brunner, S. Bukofsky, S. Butt, F. Clougherty, S. Deshpande, T. Faure, O. Gluschenkov, K. Greene, J. Johnson, N. Le, P. Lindo, A. Mahorowala, H-J. Nam, D. Onsongo, D. Poindexter, J. Rankin, N. Rohrer, S. Stiffler, A. Thomas, H. Utomo

Proceedings Volume 6521, 65210K (2007) https://doi.org/10.1117/12.711750

KEYWORDS: Critical dimension metrology, Diffusion, Lithography, Etching, Semiconducting wafers, Integrated circuits, Optical proximity correction, Cadmium, Manufacturing, Optical lithography

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Proceedings Article | 3 May 2004 Paper

High-performance circuit design for the RET-enabled 65-nm technology node

Lars Liebmann, Arnold Barish, Zachary Baum, Henry Bonges, Scott Bukofsky, Carlos Fonseca, Scott Halle, Gregory Northrop, Steven Runyon, Leon Sigal

Proceedings Volume 5379, (2004) https://doi.org/10.1117/12.538242

KEYWORDS: Resolution enhancement technologies, Manufacturing, Lithography, Photomasks, Optical proximity correction, Product engineering, Control systems, Semiconductors, Optical lithography, Electronic design automation

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Proceedings Article | 26 June 2003 Paper

Scaling rules of phase error control for the manufacturing of alternating phase-shifting masks for 193-nm photolithography and beyond

Qiang Wu, Scott Halle, Scott Bukofsky, Shahid Butt, Michael Hibbs

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485504

KEYWORDS: Photomasks, Critical dimension metrology, Diffraction, Lithography, Error control coding, Phase shifting, Control systems, Tolerancing, Optical lithography, Phase shifts

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The use of alternating phase shifting masks (alt-PSM) can significantly improve lithographic process windows. However, the existence of phase error between the nominal 0 and 180 degree phase regions can cause printed lines to shift laterally toward each other in pairs at image planes away from the best focus. Such asymmetry, especially evident with small ground rules, challenges both overlay and critical dimension (CD) control. To minimize such effect, tight control in phase angle has been implemented, which contributes to the higher fabrication cost for an alt-PSM. Since the effect of the phase error varies with different lithographic conditions, knowing how much phase control is necessary for a given lithographic situation becomes essential to the reduction of the mask fabrication cost. Although this phenomenon has been studied in the past with a number of simulations and experiments, a systematic understanding of its mechanism, especially its interaction with CD and numerical aperture has not been reported. This paper explores the theoretical relationship between phase error and important parameters of photolithographic processes, such as CD, numerical apertures (NA), and overlay tolerance. A simple equation of the phase error is developed, which indicates that the effect of the phase error is inversely proportional to both phase error and defocus. We have compared the predictions of this theory to our first experimental results from a test mask and a good agreement is found. Based on this theory, we develop the quantity “tolerable phase error” relating the effect of the phase error to the CD, pitch, and depth of focus of the imaging system. We have found that for a system with depth of focus of +/- 300 nm, a phase error control about 2 degrees is necessary to realize a line shift control of less than 2.5% of the CD for the most aggressive feature size at any NA. We also note that the control of phase error can be relaxed at high NA. Calculations for 193 nm as well as 157 nm lithography are presented.

SPIE Journal Paper | 1 April 2002

Optimum mask and source patterns to print a given shape

Alan Rosenbluth, Scott Bukofsky, Carlos Fonseca, Michael Hibbs, Kafai Lai, Antoinette Molless, Rama Singh, Alfred Wong

JM3, Vol. 1, Issue 01, (April 2002) https://doi.org/10.1117/12.10.1117/1.1448500

KEYWORDS: Photomasks, Optimization (mathematics), Reticles, Diffraction, Wavefronts, Algorithm development, Phase shifts, Tolerancing, Resolution enhancement technologies, Detection and tracking algorithms

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Proceedings Article | 14 September 2001 Paper

Optimum mask and source patterns to print a given shape

Alan Rosenbluth, Scott Bukofsky, Michael Hibbs, Kafai Lai, Antoinette Molless, Rama Singh, Alfred Wong

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435748

KEYWORDS: Photomasks, Optimization (mathematics), Reticles, Wavefronts, Algorithm development, Diffraction, Tolerancing, Resolution enhancement technologies, Detection and tracking algorithms, Phase shifts

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Proceedings Article | 14 September 2001 Paper

DRAM lithographic scaling in the sub-130-nm regime

Scott Bukofsky

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435722

KEYWORDS: Lithography, Photomasks, Signal to noise ratio, Capacitors, Phase shifts, Signal processing, Manufacturing, Semiconductors, Reflectivity, Optical proximity correction

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Proceedings Article | 14 September 2001 Paper

When is bilayer thin-film imaging suitable: comparison with single-layer resists

Scott Halle, Alan Thomas, Michael Armacost, Timothy Dalton, Xiaochun Chen, Scott Bukofsky, Oliver Genz, Zhijian Lu, Shahid Butt, Zheng Chen, Richard Ferguson, Eric Coker, Robert Leidy, Qinghuang Lin, Arpan Mahorowala, Katherina Babich, Karen Petrillo, Marie Angelopoulos, Mark Ignatowicz, Bang Bui

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435797

KEYWORDS: Etching, Photomasks, Dielectrics, Lithography, Oxides, Thin films, Silicon, Reactive ion etching, Photoresist processing, Scanning electron microscopy

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Proceedings Article | 5 July 2000 Paper

Interaction of pattern orientation and lens quality on CD and overlay errors

Scott Bukofsky, Christopher Progler

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389020

KEYWORDS: Reticles, Critical dimension metrology, Semiconducting wafers, Capacitors, Photomasks, Image processing, Monochromatic aberrations, Lithography, Semiconductors, Integrated circuits

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Proceedings Article | 5 July 2000 Paper

Double exposure technique to reduce line shortening and improve pattern fidelity

Gerhard Kunkel, Scott Bukofsky, Shahid Butt, Zhijian Lu

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.388943

KEYWORDS: Photomasks, Reticles, Semiconducting wafers, Double patterning technology, Resolution enhancement technologies, Diffraction, Light sources, Manufacturing, Lithographic illumination, Image processing

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Proceedings Article | 26 July 1999 Paper

Method to budget and optimize total device overlay

Christopher Progler, Scott Bukofsky, Donald Wheeler

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354331

KEYWORDS: Overlay metrology, Error analysis, Instrument modeling, Critical dimension metrology, Semiconducting wafers, Reticles, Lithography, Wavefronts, Optical alignment, Distortion

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Showing 5 of 10 publications

Conference Committee Involvement (2)

Advances in Resist Materials and Processing Technology XXIV

26 February 2007 | San Jose, California, United States

Advances in Resist Materials and Processing Technology XXIII

20 February 2006 | San Jose, California, United States

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