Low-cost tunable lasers are key enablers for wide deployment of dense wavelength division multiplexing (DWDM) technology in upcoming 5G wireless networks. Simple and compact tunable V-cavity laser (VCL) have been previously reported with direct modulation up to 10Gbps. The transmission distance was limited to below 10km due to wavelength chirp and chromatic dispersion of optical fiber in the telecom C-band. Here we present an electro-absorption modulated tunable V-cavity laser (VCL) based on InGaAlAs/InP multiple quantum wells. The modulator is monolithically integrated with the half-wave coupled VCL, which are fabricated with a single shallow etch for ridge waveguides and a single deep etch step for reflecting facets and trenches. No grating nor epitaxial regrowth is required. A deep-etched trench serves as the partial reflecting front mirror for the laser, while providing an excellent electrical isolation between the laser and the modulator. 50-channel wavelength tuning with 100 GHz spacing is achieved, with side-mode suppression ratio as high as 47 dB. Error-free transmission over 50 km is demonstrated at 10 Gbps, with receiver sensitivity better than -23 dBm.
Widely tunable semiconductor lasers based on a novel half-wave coupler are presented. They have been implemented in the form of half-wave coupled V-cavity and ring-FP cavities. By using the novel half-wave coupler, single-mode lasing with high side-mode-suppression-ratio is achieved. Single-electrode controlled wide-band wavelength tuning with Vernier effect is demonstrated. The full-band tuning of 50 channels with 100GHz spacing is realized by further employing temperature induced gain spectrum shift. The laser is packaged into a small-form-factor 9-pin box TOSA, and the electronic driver has been developed for the wavelength tuning and direct modulation. The advantages of compactness, fabrication simplicity, easy wavelength control and direct modulation allow the tunable lasers to be used in low-cost access and datacenter networks, as well as in portable devices for spectroscopic analysis.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.