Prof. Serge Oktyabrsky Profile

Prof. Serge Oktyabrsky

Doctor at SUNY/Univ at Albany

SPIE Involvement:

Author

Publications (21)

Proceedings Article | 24 September 2013 Paper

Engineering of absorbing medium for quantum dot infrared photodetectors

M. Yakimov, A. Sergeev, V. Pogrebnyak, A. Varghese, V. Tokranov, G. Thomain, N. Vagidov, V. Mitin, S. Oktyabrsky

Proceedings Volume 8876, 88760V (2013) https://doi.org/10.1117/12.2024458

KEYWORDS: Doping, Quantum dots, Photodetectors, Infrared radiation, Indium arsenide, Gallium arsenide, Quantum well infrared photodetectors, Infrared photography, Transmission electron microscopy, Luminescence

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Proceedings Article | 29 May 2013 Paper

Charge redistribution in adaptable quantum-dot and quantum-well nanomaterials for infrared sensing

V. Mitin, Jae Kyu Choi, G. Thomain, K. Sablon, S. Oktyabrsky, N. Vagidov, A. Sergeev

Proceedings Volume 8725, 87250D (2013) https://doi.org/10.1117/12.2015830

KEYWORDS: Nanomaterials, Sensors, Quantum wells, Gallium arsenide, Quantum dots, Doping, Optical pumping, Infrared detection, Optoelectronics, Sensing systems

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Proceedings Article | 4 March 2013 Paper

Long-wavelength ( [lambda]≈ 12- 16 µm) and cascaded transition quantum cascade lasers

Xue Huang, Yenting Chiu, Jingyuan Zhang, William Charles, Vadim Tokranov, Serge Oktyabrsky, Claire Gmachl

Proceedings Volume 8640, 864015 (2013) https://doi.org/10.1117/12.2002246

KEYWORDS: Quantum cascade lasers, Laser damage threshold, Laser scattering, Surface plasmons, Temperature metrology, Waveguides, Interfaces, Polarization, Wet etching, Dry etching

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Proceedings Article | 24 October 2012 Paper

Nanoengineered quantum dot medium for space optoelectronic devices

S. Oktyabrsky, V. Tokranov, M. Yakimov, A. Sergeev, V. Mitin

Proceedings Volume 8519, 851907 (2012) https://doi.org/10.1117/12.967124

KEYWORDS: Quantum wells, Gallium arsenide, Quantum dots, Solar cells, Infrared radiation, Indium arsenide, Optoelectronic devices, Semiconductor lasers, Photodetectors, Infrared photography

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Proceedings Article | 23 January 2010 Paper

Quantum dot photodetectors based on structures with collective potential barriers

Li-Hsin Chien, A. Sergeev, V. Mitin, S. Oktyabrsky

Proceedings Volume 7608, 760826 (2010) https://doi.org/10.1117/12.842239

KEYWORDS: Sensors, Quantum wells, Phonons, Quantum dots, Photodetectors, Picosecond phenomena, Gallium arsenide, Quantum well infrared photodetectors, Optoelectronic devices, Optoelectronics

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Proceedings Article | 18 February 2009 Paper

QD VCSELs with InAs/InGaAs short period superlattice QW injector

V. Tokranov, M. Yakimov, S. Oktyabrsky

Proceedings Volume 7224, 72240T (2009) https://doi.org/10.1117/12.809570

KEYWORDS: Vertical cavity surface emitting lasers, Quantum wells, Solids, Indium gallium arsenide, Indium arsenide, Superlattices, Oxides, Quantum dots, Doping

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Proceedings Article | 7 February 2009 Paper

VCSEL with intracavity modulator: fast modulation options

M. Yakimov, V. Tokranov, A. Sergeev, S. Oktyabrsky

Proceedings Volume 7229, 72290K (2009) https://doi.org/10.1117/12.809568

KEYWORDS: Modulation, Modulators, Picosecond phenomena, Vertical cavity surface emitting lasers, Optoelectronics, Absorption, Optoelectronic devices, Instrument modeling, Data modeling, Q switches

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Proceedings Article | 11 February 2008 Paper

Modulation and thermal properties of tunnel-coupled InAs QD 1.13µm VCSELs

V. Tokranov, M. Yakimov, J. van Eisden, S. Oktyabrsky

Proceedings Volume 6902, 69020C (2008) https://doi.org/10.1117/12.764057

KEYWORDS: Vertical cavity surface emitting lasers, Quantum wells, Modulation, Indium arsenide, Indium gallium arsenide, Transmission electron microscopy, Gallium arsenide, Solids, Oxides, Phonons

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Proceedings Article | 29 January 2008 Paper

High frequency resonance-free loss modulation in a duo-cavity VCSEL

J. van Eisden, M. Yakimov, V. Tokranov, M. Varanasi, O. Rumyantsev, E. Mohammed, I. Young, S. Oktyabrsky

Proceedings Volume 6908, 69080M (2008) https://doi.org/10.1117/12.763859

KEYWORDS: Modulation, Modulators, Vertical cavity surface emitting lasers, Absorption, Reflectivity, Diodes, Mirrors, Temperature metrology, Phase shift keying, Quantum wells

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Proceedings Article | 7 February 2007 Paper

Modulation properties of VCSEL with intracavity modulator

J. van Eisden, M. Yakimov, V. Tokranov, M. Varanasi, E. Mohammed, I. Young, S. Oktyabrsky

Proceedings Volume 6484, 64840A (2007) https://doi.org/10.1117/12.701516

KEYWORDS: Modulators, Modulation, Vertical cavity surface emitting lasers, Diodes, Capacitance, Absorption, Quantum wells, Signal attenuation, Optoelectronics, Picosecond phenomena

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Proceedings Article | 6 February 2007 Paper

All-epitaxial VCSELs with tunnel QW-QD InGaAs-InAs gain medium

V. Tokranov, M. Yakimov, J. van Eisden, S. Oktyabrsky

Proceedings Volume 6481, 64810I (2007) https://doi.org/10.1117/12.701639

KEYWORDS: Quantum wells, Vertical cavity surface emitting lasers, Gallium arsenide, Indium gallium arsenide, Transmission electron microscopy, Indium arsenide, Gallium, Quantum dots, Semiconductor lasers, Luminescence

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Proceedings Article | 7 February 2006 Paper

Tunnel quantum well-on-dots InGaAs-InAs high-gain medium for laser diodes

V. Tokranov, M. Yakimov, J. van Eisden, S. Oktyabrsky

Proceedings Volume 6129, 612908 (2006) https://doi.org/10.1117/12.646844

KEYWORDS: Quantum wells, Vertical cavity surface emitting lasers, Modulation, Gallium arsenide, Semiconductor lasers, Indium gallium arsenide, Solids, Transmission electron microscopy, Gallium, Indium arsenide

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Proceedings Article | 4 April 2005 Paper

Tunnel quantum dot/well InAs/InGaAs Structures as active medium for laser diodes

Vadim Tokranov, Michael Yakimov, Gabriel Agnello, Jobert van Eisden, Serge Oktyabrsky

Proceedings Volume 5734, (2005) https://doi.org/10.1117/12.591156

KEYWORDS: Quantum wells, Gallium arsenide, Indium arsenide, Semiconductor lasers, Indium gallium arsenide, Laser damage threshold, Solids, Transmission electron microscopy, Modulation, Gallium

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Proceedings Article | 7 March 2005 Paper

Oxidation lift-off technology

Serge Oktyabrsky, Michael Yakimov, Vadim Tokranov, Jobert van Eisden, Alexei Katsnelson

Proceedings Volume 5730, (2005) https://doi.org/10.1117/12.591112

KEYWORDS: Vertical cavity surface emitting lasers, Aluminum, Silicon, Gallium arsenide, Metals, Epitaxial lateral overgrowth, Etching, Gallium, Oxides, Oxidation

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Proceedings Article | 11 May 2004 Paper

Nanoengineered InAs quantum dot active medium for laser diodes

Vadim Tokranov, Michael Yakimov, Alex Katsnelson, Matthew Lamberti, Gabriel Agnello, Serge Oktyabrsky

Proceedings Volume 5365, (2004) https://doi.org/10.1117/12.529717

KEYWORDS: Gallium arsenide, Semiconductor lasers, Indium arsenide, Transmission electron microscopy, Quantum dots, Vertical cavity surface emitting lasers, Laser damage threshold, Superlattices, Luminescence, Arsenic

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Proceedings Article | 1 July 2003 Paper

Shape Engineered InAs Quantum Dots with Stabilized Electronic Properties

Vadim Tokranov, Michael Yakimov, Alex Katsnelson, Matthew Lamberti, Serge Oktyabrsky

Proceedings Volume 4999, (2003) https://doi.org/10.1117/12.477795

KEYWORDS: Indium arsenide, Gallium arsenide, Semiconductor lasers, Transmission electron microscopy, Laser damage threshold, Quantum dots, Temperature metrology, Scanning electron microscopy, Optical properties, Laser stabilization

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Proceedings Article | 30 May 2003 Paper

Hybrid integration of III-V optoelectronic devices on Si platform using BCB

Alexei Katsnelson, Vadim Tokranov, Michael Yakimov, Matthew Lamberti, Serge Oktyabrsky

Proceedings Volume 4997, (2003) https://doi.org/10.1117/12.479453

KEYWORDS: Silicon, Vertical cavity surface emitting lasers, Gallium arsenide, Etching, Optoelectronic devices, Semiconducting wafers, Polymers, Wet etching, Photodetectors, Metals

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Inadequate performance of interconnects in emerging integrated circuitry has generated a need for alternative signal transmission solutions. Integration of dense arrays of high frequency III-V photoemitters and photodetectors with Si platform is one of the challenging tasks. Comparison of monolithic and hybrid integration technologies highlights the advantages of hybrid approaches at least for emitters highly sensitive to growth defects. A novel protocol for fabrication of III-V optoelectronic components such as LEDs, VCSELs and photodetectors on Si platform is proposed. The simulations of thermal behavior and mechanical stresses of this integration scheme was performed using finite element analysis and revealed adequate heat dissipation. Simulations show that this protocol allows to reduce overheating and mechanical stresses to enhance the optoelectronic devices performance and increase their lifetime. The III-V structures are grown homoepitaxialy on GaAs substrate, then bonded to a Si wafer using low-temperature polymer followed by wet etching of the substrate. The scheme involves VCSEL processing with coplanar metallization on Si with PMGI reflow planarization. MBE-grown reversed VCSEL structure was used for manufacturing of the test devices using this novel protocol. An AlAs etch stop layer was imbedded into the structure. 10 um thick VCSEL structure was bonded on Si using BCB (CycloteneTM). Substrate was completely removed by selective etching to reduce thermal stresses to enhance the optoelectronic devices performance and increase their lifetime. The array of the 3D devices was fabricated using wet etching. A 10 um-thick high frequency VCSEL with coplanar metallization is processed on Si with PMGI reflow planarization. Electro-luminescence spectrum, I-V and P-T characteristics were measured and compared with a reference structure. It was found that measured thermal impedance is about five times higher than for devices on a host GaAs wafer. Simulation of thermal behavior was done for bonded and non-bonded structure. It was found that measured values of thermal impedance are in good agreement with simulation results.

Proceedings Article | 3 June 2002 Paper

Emerging technologies for chip-level optical interconnects

Serge Oktyabrsky, James Castracane, Alain Kaloyeros

Proceedings Volume 4652, (2002) https://doi.org/10.1117/12.469568

KEYWORDS: Silicon, Vertical cavity surface emitting lasers, Gallium arsenide, Free space optics, Optical interconnects, Waveguides, Light emitting diodes, Modulators, Electronics, Optical alignment

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Proceedings Article | 28 March 2002 Paper

InAs quantum dot laser diodes: structure, characteristics, and temperature dependence

Vadim Tokranov, Michael Yakimov, Alex Katsnelson, Katharine Dovidenko, Rene Todt, Serge Oktyabrsky

Proceedings Volume 4656, (2002) https://doi.org/10.1117/12.460804

KEYWORDS: Indium arsenide, Gallium arsenide, Semiconductor lasers, Transmission electron microscopy, Quantum wells, Laser damage threshold, Luminescence, Gallium, Cladding, Electroluminescence

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Proceedings Article | 15 May 2001 Paper

Component development and integration issues for bio/chemometric appliations of VCSEL and MOEMS arrays

James Castracane, Christian Baks, Serge Oktyabrsky, Bai Xu, Yahong Yao

Proceedings Volume 4284, (2001) https://doi.org/10.1117/12.426866

KEYWORDS: Microopto electromechanical systems, Vertical cavity surface emitting lasers, Chemical analysis, Analytical research, Tin, Biological research, System on a chip, Statistical analysis, Quantum wells, Reflectivity

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Proceedings Article | 24 April 1995 Paper

Defects and interfaces in low-temperature grown Ge/Si heterostructures

Serge Oktyabrsky, Jagdish Narayan

Proceedings Volume 2397, (1995) https://doi.org/10.1117/12.206905

KEYWORDS: Interfaces, Germanium, Heterojunctions, Annealing, Thin films, Crystals, Pulsed laser deposition, Transmission electron microscopy, Silicon, Semiconductors

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Showing 5 of 21 publications

Conference Committee Involvement (3)

Nanophotonics and Macrophotonics for Space Environments IX

14 August 2015 | San Diego, California, United States

Nanophotonics and Macrophotonics for Space Environments VIII

18 August 2014 | San Diego, California, United States

Nanophotonics and Macrophotonics for Space Environments VII

25 August 2013 | San Diego, California, United States

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