We have developed a massive on-cell overlay metrology system based on Mueller matrix measurements. By integrating microscopic techniques into ellipsometry, we achieved high-throughput and extensive sampling coverage, with 1-shot/field per 1-field of view (FOV) measurement capability within a 34 x 34 mm2 FOV. Analyzing the off-diagonal components of the Mueller matrix allowed for on-cell overlay measurement across the wafer. This system provides measurement sensitivity comparable to e-beam-based technologies while offering high coverage, enabling precise reticle correction or high-order overlay correction in photolithography processes. This advancement represents a significant improvement in overlay metrology, offering both sensitivity and resolution for enhanced semiconductor manufacturing processes.
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