Scatterometry performance enhancement is demonstrated through a holistic approach by utilizing comprehensive information from various sources, including data from different process steps, different toolsets, multiple structures, and multiple optical channels using samples from magnetic hard disk drive manufacturing. Parameter and spectrum feed-forward are performed across multiple targets at the photo step and the photo results are fed forward to the post-reactive ion etch (RIE) step. For an isolated structure with critical dimensions (CD) much smaller than the incident light wavelengths, feed-forward methods improve CD correlation with a general improvement of 20 to 60% in precision and fleet measurement precision (FMP). A second technique examined is hybrid metrology, where inputs from source tools, such as CD-SEM and CD-AFM, are used to determine critical parameters. Hybridization of line edge roughness results in CD and sidewall angle (SWA) FMP improvement of ∼60%. We also demonstrate improved CD accuracy using azimuthal scatterometry at 0, 45, and 90 deg azimuth angles measuring resist lines with CD larger than the incident light wavelengths. FMP reductions of ∼60 and 30% are obtained for CD and SWA. SWA hybridization after RIE results in CD and SWA FMP improvements by >50 and 30%, respectively.
Optical critical dimension (OCD) metrology using scatterometry has been widely adopted for fast and non-destructive in-line process control and yield improvement. Recently there has been increased interest in metrology performance enhancement through a holistic approach. We investigate the benefits of feed-forward of metrology information from prior process steps using samples from magnetic hard disk drive manufacturing. The scatterometry targets are composed of rather isolated gratings that are designed to have better correlation with device features. Two gratings, one with pitch ≈ 10CD, and the other with pitch ≈ 15CD, are measured at post develop and post reactive ion etch (RIE) steps. Two methods: parameter feed-forward (PFF) and spectrum feedforward (SFF) are studied in which the measurement results or spectrum collected on the blanket target at photo step are fed forward to the measurements on the grating structures at post develop or post RIE step. Compared with standard measurement without FF, for the more isolated grating at photo step, both PFF and SFF improve CD correlation from R2=0.96 to R2=0.975 using CD-SEM results measured on device as the reference. Dynamic precision and fleet measurement precision are improved by 20-60%. For post RIE step, PFF and SFF significantly improve CD correlation from R2=0.95, slope=1.09 to R2=0.975, slope=1.03 for the denser grating, and from R2=0.90, slope=0.79 to R2=0.96, slope=0.96 for the more isolated grating. Dynamic precision is generally improved by 20-40%. It is observed that both PFF and SFF are equally efficient in reducing parameter correlation for the application studied here.
Reducing parameter correlations to enhance scatterometry measurement accuracy, precision and tool matching is a crucial component of every modeling effort. Parameter sensitivity can largely depend on the orientation of the plane of incidence relative to the grating orientation. Conventional scatterometry is done with the plane if incidence normal to the grating orientation, whereas azimuthal scatterometry allows measurements at an arbitrary angle or set of angles. A second technique examined in this paper is hybrid metrology where inputs from source tools such as CD-SEM and CD-AFM are used to determine values of critical parameters. The first examples shows LER sensitivity gains by measuring narrow resist lines in an orientation parallel with the long axis of the grating. Hybridization of LER results in a CD and SWA FMP improvement of about 60%. We also showcase the benefits of azimuthal scatterometry measuring resist lines with CD larger than the wavelengths of the incident light. A CD and SWA FMP reduction of about 60% and 30% is obtained using azimuthal scatterometry at 0, 45 and 90 degrees azimuth angles. Hybridization of the ARC SWA after RIE results in CD and resist SWA FMP improvements by over 60% and 30%, respectively.
KEYWORDS: Scatterometry, Reactive ion etching, 3D metrology, Semiconducting wafers, 3D acquisition, Ions, Metrology, Critical dimension metrology, Scatter measurement, 3D modeling
A non-destructive and fast optical solution for characterization of high aspect ratio and isolated 3D hard disk drive writer head air bearing surface structure is presented in this paper. While 2D gratings are plagued by line bending and accuracy problems, the 3D scatterometry test structures show superior mechanical stability and device resemblance necessary for an accurate measurement capability at a reactive ion etch process step enabling further ion mill shape predictability prior to a point of no return in the process. The scatterometry post RIE measurement on the 3D test targets show R^2 about five times better than dual beam FIB and a correlation slope roughly 3 times closer to unity. The post RIE scatterometry wafer sigma is in average 49% of the post RIE FIB sigma and 77% of the post ion mill FIB sigma.
KEYWORDS: Copper, Scatterometry, Back end of line, Metals, Critical dimension metrology, Semiconducting wafers, Chemical mechanical planarization, Metrology, Inspection, Dielectrics
Implementations of scatterometry in the back end of the line (BEOL) of the devices requires design of advanced
measurement targets with attention to CMP ground rule constraints as well as model simplicity details. In this paper
we outline basic design rules for scatterometry back end targets by stacking and staggering measurement pads to
reduce metal pattern density in the horizontal plane of the device and to avoid progressive dishing problems along
the vertical direction. Furthermore, important characteristics of the copper shapes in terms of their opaqueness and
uniformity are discussed. It is shown that the M1 copper thicknesses larger than 100 nm are more than sufficient for
accurate back end scatterometry implementations eliminating the need for modeling of contributions from the buried
layers. AFM and ellipsometry line scans also show that the copper pads are sufficiently uniform with a sweet spot
area of around 20 μm. Hence, accurate scatterometry can be done with negligible edge and/or dishing contributions
if the measurement spot is placed any where within the sweet spot area. Reference metrology utilizing CD-SEM and
CD-AFM techniques prove accuracy of the optical solutions for the develop inspect and final inspect grating
structures. The total measurement uncertainty (TMU) values for the process of record line width are of the order of
0.77 nm and 0.35 nm at the develop inspect and final inspect levels, respectively.
New material innovations such as Embedded Silicon Germanium (eSiGe) provide a substantial metrology challenge for
the 45 nm node technology and beyond. We discuss the details of how scatterometry provides in-line metrology solution
to measure key features of the eSiGe structure. Critical features to measure are eSiGe to gate proximity and the un-etched
silicon on insulator (SOI) thickness. The proximity measurement is particularly vital because it has a major
influence on device performance, yet there was no high throughput in-line metrology solution until scatterometry.
Results from multiple scatterometry platforms (three) are presented along with a summary of various metrology
performance metrics like precision and accuracy. We also show how scatterometry measurements have been
instrumental in supporting process development efforts. The comparison of scatterometry measurements to reference
data from multiple metrology techniques is presented in order to evaluate the accuracy performance of various supplier
platforms. Reference metrology techniques used are thin-film measurements from un-patterned targets, transmission
electron microscopy (TEM) and cross-section scanning electron microscopy (XSEM). Tool matching uncertainty
(TMU) analysis and weighted reference measurement system (wRMS) technique have been utilized to assist in the
interpretation of correlation data. Scatterometry results from various wafers that were generated to modulate spacer
width and etch cavity are also presented. The results demonstrate good sensitivity for key measurement features,
especially eSiGe proximity and un-etched SOI thickness, which have very tight process control requirements.
This paper discusses the scatterometry-based measurement of a complex thin-spacer PFET structure containing an
embedded SiGe (eSiGe) trench. The thickness of the spacer and the overfill of the eSiGe trench are critical
measurement parameters for such a structure. Although the corresponding NFET structure does not contain the eSiGe-filled
trench, it is also found to be a good barometer of thin-spacer measurement capability and so is also used in the
study. First, the paper discusses the dispersion analysis challenges and approaches for these 45 nm node structures.
Next, two sets of scatterometry hardware, one in production and one under development, are used to measure the critical
parameters in order to understand the differences in measurement performance between the systems. Transmission
Electron Microscopy (TEM) analysis is used as a reference metrology to assess the accuracy performance of the
hardware. Results show that the advanced optics of the newer system significantly improves the dynamic repeatability
of the parameters compared to the older system, while the newer system's extended wavelength range down into the
deep UV (DUV) can provide a noticeable improvement in measurement accuracy due to the significantly greater
parameter sensitivity in this wavelength range.
A non-destructive and fast optical solution for characterization of 3D deep trench mask open structures containing
two holes per unit cell is presented. It is discussed that measurement sensitivity depends on wafer orientation. A
weighted reference measurement system using data from scatterometry combined with CD-SEM and CD-AFM
techniques after HF removal of the top BSG layer demonstrates adequate performance of scatterometry for high
aspect ratio 3D process control implementations. For example the BCD major and minor axis scatterometry total
measurement uncertainty values are about a factor 2 better than the corresponding results obtained using CD-SEM
and CD-AFM. While scatterometry data exhibit close to unity slope for both TCD and BCD, corresponding CD-SEM
and CD-AFM performances show significantly stronger dependence on depth. Hence, Scatterometry
sensitivity to CD variation is less depth sensitive which is a preferred high volume manufacturing property.
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