Dr. ShengWen Xie Profile

Dr. ShengWen Xie

at Institute of Semiconductors CAS

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Author

Publications (11)

Proceedings Article | 8 November 2024 Paper

Photoelectric characteristics of mid-infrared nBn photodetector based on InAs/InAsSb superlattice

Ruiqing Chai, Shengwen Xie, Lili Xie, Qiyang Sun, Jiushuang Zhang, Ruimeng Zhang, Ruiming Chen

Proceedings Volume 13247, 132470B (2024) https://doi.org/10.1117/12.3038953

KEYWORDS: Sensors, Dark current, Photodetectors, Quantum detection, Superlattices, Quantum efficiency, Mid infrared, Infrared detectors, Gallium antimonide

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Proceedings Article | 18 December 2023 Paper

Composition disorder in InAs/InAsSb superlattice by STM

Shengwen Xie, Lili Xie, Ruiqing Chai, Jiushuang Zhang, Qiyang Sun, Xu Zhang, Yao Yao, Ben Fan, Liqun Dai, Hongbo Bu, Ruimeng Zhang, Ruiming Chen

Proceedings Volume 12963, 129630F (2023) https://doi.org/10.1117/12.3005383

KEYWORDS: Antimony, Superlattices, Interfaces, Indium arsenide, Scanning tunneling microscopy, Data modeling, Electrical properties, Modeling

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Proceedings Article | 15 December 2022 Paper

New method to characterize Sb segregation in InAs/GaSb superlattice

Shengwen Xie, Lili Xie, Qiyang Sun, Ruiqing Chai, Ruiming Chen, Faran Chang, Chengao Yang

Proceedings Volume 12478, 1247837 (2022) https://doi.org/10.1117/12.2654812

KEYWORDS: Antimony, Interfaces, Superlattices, Scanning tunneling microscopy, Gallium antimonide

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Proceedings Article | 31 December 2021 Paper

Energy band of InAs/GaSb superlattice by K.p method

ShengWen Xie, Lili Xie, Jiushuang Zhang, Xu Zhang, Qiyang Sun, Ruiqing Chai, Ben Fan, Liqun Dai, Shengya Xu, Liqiang Han, Ruiming Chen, Chang Faran

Proceedings Volume 12061, 1206120 (2021) https://doi.org/10.1117/12.2605121

KEYWORDS: Superlattices, Finite difference methods, Photodetectors, Short wave infrared radiation, Long wavelength infrared, Semiconductors, Photonics, Modeling

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Proceedings Article | 17 May 2019 Paper

Fabrication of GaSb-based distributed Bragg reflector semiconductor lasers

Cheng-Ao Yang, Sheng-Wen Xie, Yi Zhang, Jin-Ming Shang, Ye Yuan, Fu-Hui Shao, Shu-Shan Huang, Qing-Xuan Jia, Yu Zhang, Ying-Qiang Xu, Zhi-Chuan Niu

Proceedings Volume 11170, 111701A (2019) https://doi.org/10.1117/12.2533003

KEYWORDS: Semiconductor lasers, Gallium antimonide, Distributed Bragg reflectors, Chromium, Continuous wave operation, Bragg gratings, Quantum wells, Electron beam lithography, Absorption

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Proceedings Article | 17 May 2019 Paper

Optimum growth parameters of InAs/AlSb superlattices for interband cascade lasers

Yi Zhang, Fu-Hui Shao, Cheng-Ao Yang, Sheng-Wen Xie, Shu-Shan Huang, Ye Yuan, Jin-Ming Shang, Yu Zhang, Ying-Qiang Xu, Hai-Qiao Ni, Zhi-Chuan Niu

Proceedings Volume 11170, 111700V (2019) https://doi.org/10.1117/12.2532548

KEYWORDS: Superlattices, Interfaces, Laser sintering, Gallium antimonide, Atomic force microscopy, Indium arsenide, Luminescence, Antimony, Camera shutters

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Proceedings Article | 17 May 2019 Paper

Micro-stripe broad-area infrared diode lasers without deterioration of output power

Sheng-wen Xie, Zhi-chuan Niu, Cheng-Ao Yang, Yi Zhang, Jin-Ming Shang, Fu-Hui Shao, Yu Zhang, Ying-qiang Xu

Proceedings Volume 11170, 111700Q (2019) https://doi.org/10.1117/12.2532478

KEYWORDS: Semiconductor lasers, Infrared radiation, Infrared lasers, Laser damage threshold, Continuous wave operation, Semiconductors, High power lasers, Semiconducting wafers, Etching, Optoelectronics

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Proceedings Article | 24 January 2019 Paper

Wavelength tuning of type-II “W” quantum well of interband cascade laser

Yi Zhang, Fu-Hui Shao, Cheng-Ao Yang, Sheng-Wen Xie, Shu-Shan Huang, Ye Yuan, Jin-Ming Shang, Yu Zhang, Ying-Qiang Xu, Hai-Qiao Ni, Zhi-Chuan Niu

Proceedings Volume 11052, 110520L (2019) https://doi.org/10.1117/12.2521757

KEYWORDS: Indium arsenide, Quantum wells, Arsenic, Antimony, Wavelength tuning, Luminescence, Continuous wave operation, Gallium antimonide, Atomic force microscopy

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Proceedings Article | 24 January 2019 Paper

Room temperature continuous wave operation of GaSb - based semiconductor disk laser near 2 μm

Jin-Ming Shang, Jian Feng, Cheng-Ao Yang, Shen-Wen Xie, Yi Zhang, Ye Yuan, Shu-Shan Huang, Yu Zhang, Cun-Zhu Tong, Zhi-Chuan Niu

Proceedings Volume 11052, 110520T (2019) https://doi.org/10.1117/12.2521861

KEYWORDS: Semiconductor lasers, Semiconductors, Gallium antimonide, Disk lasers, Quantum wells, Continuous wave operation, Laser countermeasures

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Proceedings Article | 24 January 2019 Paper

Single-mode distributed Bragg reflector lasers at 2.08 μm

Cheng-Ao Yang, Sheng-Wen Xie, Yi Zhang, Jin-Ming Shang, Ye Yuan, Fu-Hui Shao, Shu-Shan Huang, Yu Zhang, Ying-Qiang Xu, Zhi-Chuan Niu

Proceedings Volume 11052, 110520M (2019) https://doi.org/10.1117/12.2521766

KEYWORDS: Semiconductor lasers, Distributed Bragg reflectors, Gallium antimonide, Epitaxy, Bragg gratings, Continuous wave operation, Waveguides, Arsenic, Antimony, Gallium

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Proceedings Article | 24 January 2019 Paper

Output power improvements of antimonide quantum well laser diodes by rapid thermal annealing on the cavity coating films

Sheng-Wen Xie, Cheng-Ao Yang, Ye Yuan, Shu-Shan Huang, Yi Zhang, Jin-ming Shang, Yu Zhang, Ying-Qiang Xu, Zhi-Chuan Niu

Proceedings Volume 11052, 110520Q (2019) https://doi.org/10.1117/12.2521803

KEYWORDS: Reflectivity, Annealing, Coating, Semiconductor lasers, Gallium antimonide, Quantum wells, Aluminum, Scanning electron microscopy, Waveguides, Gallium

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Showing 5 of 11 publications

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