A novel optical gas sensor based on electromagnetically induced transparency (EMT)is proposed. In this paper we propose plasmonic non concentric ring resonators resonate near the absorption regions of many gases in the mid-infrared region. Mid-infrared (MIR) wavelength range is of particular interest because it contains the absorption resonance for several molecules such as methane, carbon dioxide, carbon monoxide, and acetone. The sensing process is controlled by changing the refractive index. The proposed slotted waveguide coupled with double non-concentric ring resonators, both the waveguide and rings are surrounded with doped silicon. Doped silicon can act as a suitable plasmonic alternative instead of metals in the MIR range. When the two coupled non-concentric rings optimize to resonate on the same wavelength; interesting phenomena occurs such as the Fano-resonance and the electromagnetic induced transparency effects. In this paper we show the electromagnetic induced Transparency which is an absence of the resonant spectral lines of the same wavelength, and the creation of two resonance lines at red-shifted and blue-shifted wavelengths. Moreover, we mentioned all the details about the dimensions and the material used for our design. A Small foot print, high sensitivity, and high Figure of merit are achieved.
We propose a fully CMOS compatible optical sensor based on the ring resonator mechanism. The waveguide structure of the sensor utilizes the silicon on insulator slot waveguide configuration. The analyte fills the slot and the cladding of the ring resonator. Since the optical power is enhanced and confined within the slot, then the overlap between the analyte and the optical power is maximized. The sensitivity of the sensor was measured to be 350 nm/RIU at the optical wavelength of 1.55 μm.
An optical modulator based on the racetrack resonator configuration is introduced. The structure of the resonator modulator is built from silicon nanowires on silica. The cladding and voids between the silicon nanowires are filled with an electro-optic polymer. The proposed modulator is fully CMOS compatible. When the resonance is tuned to the 1.55μm wavelength, it experiences a wavelength shift upon voltage application, which is measured at the output as a change in the power level.
We introduce an ultra-compact plasmonic sensor for lab on chip applications. The device utilizes the heavily doped Si for introducing plasmonic effects. The use of heavily doped silicon instead of metals for plasmonic excitation has the advantage of reduced losses and CMOS compatibility. The proposed device has a simple structure, also it can be easily fabricated using the mature CMOS fabrication technology. The device structure is made of a heavily doped silicon layer, on a silicon dioxide substrate, while the silicon layer is etched to form a slot waveguide, and a rectangular cavity. The proposed plasmonic resonator is operational in the mid infrared spectral region. The sensor possesses a high sensitivity of 5000nm/RIU in the mid infrared range.
We demonstrate an ultracompact integrated silicon-based plasmonic sensor for lab-on-chip applications in the mid-infrared (MIR) spectral range. Our sensor possesses desirable features such as design simplicity and very high sensitivity. The sensor is designed using a platform for plasmonic effects in the MIR using highly doped silicon. This platform is exploited to create a metal-less plasmonic slot waveguide in the MIR range. This plasmonic waveguide is highly sensitive to any environmental change. Full wave electromagnetic simulations were carried out to design and optimize the structure. The proposed sensor covers a large wavelength span in the MIR range. High spectral sensitivity of 5000 nm/RIU was achieved for our sensor device. Further development of the structure was conducted to extend the sensor operation to multigas sensing.
We introduce a compact plasmonic resonator that is capable of generating a Fano resonance in the transmission spectrum. The Fano resonance is observed with its unique lineshape. The proposed design is simple, compact, easy to fabricate and can be easily developed for different applications. The device structure is made of a gold layer, a metalinsulator- metal waveguide, and a rectangular cavity. As an application to the proposed plasmonic resonator, we introduce a gas sensor which is operational at the near infrared spectral range. The sensor possesses a high sensitivity of 1500nm/RIU at the telecom wavelength 1.55μm. FDTD simulation tools were conducted for the optimization of the device structure and obtaining the results.
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