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Dan Shi
at Changchun Univ of Science and Technology
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Publications (1)
Proceedings Article | 11 September 2013 Paper
Effect of InGaAs strain reducing layer and rapid thermal annealing on the properties of InAs/GaAs quantum
Proceedings Volume 8907, 890753 (2013) https://doi.org/10.1117/12.2034902
KEYWORDS: Quantum dots, Indium arsenide, Annealing, Indium gallium arsenide, Gallium arsenide, Optical properties, Quantum wells, Molecular beam epitaxy, Semiconductors, Quantum communications
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