Dr. Shiang-Feng Tang Profile

Dr. Shiang-Feng Tang

Assistant Scientist at Chung Shan Institute of Science and Technology

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Publications (12)

Proceedings Article | 6 May 2013 Paper

Buffer direct injection readout integrated circuit design for dual band infrared focal plane array detector

Tai-Ping Sun, Yi-Chuan Lu, Hsiu-Li Shieh, Shiang-Feng Tang, Wen-Jen Lin

Proceedings Volume 8773, 877306 (2013) https://doi.org/10.1117/12.2017730

KEYWORDS: Sensors, Infrared sensors, Amplifiers, Switches, Readout integrated circuits, Infrared radiation, Resistance, Signal processing, Capacitors, Infrared detectors

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Proceedings Article | 31 January 2013 Paper

Research of capacitor transimpedance amplifier for infrared readout integrated circuit design with variable integration time

Tai-Ping Sun, Yi-Chuan Lu, Hsiu-Li Shieh, Ming-Sheng Yang, Tse-Hsin Chen, Shiang-Feng Tang, Wen-Jen Lin

Proceedings Volume 8759, 87592S (2013) https://doi.org/10.1117/12.2014793

KEYWORDS: Capacitors, Infrared radiation, Amplifiers, Sensors, Infrared imaging, Infrared sensors, Signal processing, Integrated circuit design, Switches, Staring arrays

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Proceedings Article | 16 September 2011 Paper

Design of integrated readout circuit with enhanced capacitance mechanism for dual-band infrared detector

Tai-Ping Sun, Yi-Chuan Lu, Hsiu-Li Shieh, Shiuan-Shuo Shiu, Yi-Ting Liu, Shiang-Feng Tang, Wen-Jen Lin

Proceedings Volume 8155, 815505 (2011) https://doi.org/10.1117/12.894337

KEYWORDS: Capacitors, Readout integrated circuits, Integrated circuit design, Integrated circuits, Sensors, Capacitance, Infrared radiation, Device simulation, Infrared sensors, Infrared detectors

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Proceedings Article | 19 August 2010 Paper

Optimization of readout circuit with background suppression for dual-band quantum well infrared focal plane array photodetector

Yi-Chuan Lu, Tai-Ping Sun, Hsiu-Li Shieh, Jian-Cheng Ye, Sen-Chuan Hung, Meng-Lieh Sheu, Shiang-Feng Tang, Wen-Jen Lin

Proceedings Volume 7780, 778018 (2010) https://doi.org/10.1117/12.860605

KEYWORDS: Mid-IR, Infrared radiation, Cadmium sulfide, Staring arrays, Long wavelength infrared, Sensors, Infrared detectors, Infrared imaging, Infrared sensors, Quantum wells

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Proceedings Article | 9 January 2008 Paper

The investigations of InAs quantum dots overgrown on In0.1Ga0.9As surfactant layer and 10º off-angle (100) GaAs substrate

Shiang-Feng Tang, Min-Yu Hsu, Cheng-Der Chiang, C.-C. Su, Chuan-Pu Liu, Yu-Ching Fang

Proceedings Volume 6800, 68001E (2008) https://doi.org/10.1117/12.759448

KEYWORDS: Gallium arsenide, Gallium, Indium arsenide, Quantum dots, Arsenic, Atomic force microscopy, Indium, Luminescence, Heterojunctions, Transmission electron microscopy

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Proceedings Article | 13 June 2007 Paper

Dual-band infrared imaging analyses for 256 × 256 InAs/GaAs quantum dot infrared photodetector focal plane array

Shiang-Feng Tang, Cheng-De Lee, Chih-Chang Shih, Cheng Der Chiang, Yau-Tang Gau, San-Te Yang, Tai-Ping Sun, Fu-Fa Lu

Proceedings Volume 6542, 65420P (2007) https://doi.org/10.1117/12.719123

KEYWORDS: Staring arrays, Thermography, Infrared imaging, Mid-IR, Long wavelength infrared, Infrared radiation, Quantum dots, Quantum well infrared photodetectors, Infrared photography, Photodetectors

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Proceedings Article | 7 February 2007 Paper

Numerical simulation of temperature-dependence on distributed Bragg reflector (DBR) and performance analyses for proton-implant/oxide confined VCSEL: comparison with transmission matrix, matrix calculating methods, and Macleod model

Hong-Mau Tsai, Shiang-Feng Tang, Shih-Tsang Sua, Tzu-Chiang Chen, Cheng-Der Chiang

Proceedings Volume 6484, 64840I (2007) https://doi.org/10.1117/12.698893

KEYWORDS: Vertical cavity surface emitting lasers, Aluminum, Gallium, Mirrors, Refractive index, Reflectivity, Gallium arsenide, Oxides, Resistance, Wave propagation

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Proceedings Article | 3 February 2007 Paper

Calculations of bandstructures on the lens and pyramid-shaped InAs quantum dot for confirming the photoluminescence and photoresponse

Tzu-Huan Huang, Shiang-Feng Tang, Tzu-Chiang Chen, Fu-Fa Lu, Cheng-Der Chiang

Proceedings Volume 6479, 64790G (2007) https://doi.org/10.1117/12.698911

KEYWORDS: Indium arsenide, Finite element methods, Gallium arsenide, Quantum dots, Luminescence, Heterojunctions, Transmission electron microscopy, Absorption, Gallium, Chemical elements

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Electronic and optical properties of ideal and real quantum dots (QDs) are extensively studied and derived for the recent decade. Strain caused by the differences of the lattice constants of dot and wetting, barrier materials are decisive for both the self-assembly mechanisms and the electro-optical properties. The research is mainly investigated for realizing the strain effects on the optical properties of InAs/GaAs self-assembled QDs embedded in GaAs barrier layer incorporated with the three-dimensional (3D) Schördinger equation and solved by using finite element method (FEM). From 3D QD geometrical profiles establishing by the spatially geometric equations, the confined electron and hole bandstructures on altering sized lens and pyramidal shape-like QDs with numerical calculations and strained heterostructure of the finite element approximations have been proposed. Applying the fast FEM models, it is demonstrated that the correspondence of ground, excited eigenstates, the probability of density function (|Ψ|²) of the confined levels from the single InAs QD to a matrix of nine QDs to obtain the transition energy and coordinated absorption wavelength to be predicted and summarized clearly. Through calculating energy levels within the conduction and valence band edge confinement on the InAs/GaAs heterostructure with FEM to contradistinguish with corrected to optical transitions and linear absorption spectra can be achieved for verifying to being the specific wavelengths from photoluminescence (PL) and photoresponse (PR) measurements for quantum dot infrared photodetector. By fitting the energy differences among the subbands, the geometrical shape and size of QD can be predicted. Inducting the tendency from single QD to the matrix of 9 QDs, the step-wise bands have been obtained being some regularity clearly. And from the transmission electron microscope (TEM) measurement, the dominant sizes of QDs in the really grown wafer remain the consistent with the numerical analyses applied in 3D QD profile that is interpreted using spatially geometric equations.

Proceedings Article | 13 February 2006 Paper

Electronic characteristics of doped InAs/GaAs quantum dot photodetector: temperature dependent dark current and noise density

Chung-Chi Liao, Shiang-Feng Tang, Tzu-Chiang Chen, Cheng-Der Chiang, San-Te Yang, Wen-Kuan Su

Proceedings Volume 6119, 611905 (2006) https://doi.org/10.1117/12.644422

KEYWORDS: Quantum dots, Gallium, Quantum well infrared photodetectors, Photodetectors, 3D modeling, Infrared radiation, Metalorganic chemical vapor deposition, Aluminum, Infrared photography, Interference (communication)

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Proceedings Article | 10 February 2006 Paper

Temperature dependent VCSEL optical characteristics based on graded Al_xGa_1-xAs/GaAs distributed Bragg reflectors: reflectivity and beam profile analyses

Shih-Tsang Su, Shiang-Feng Tang, Tzu-Chiang Chen, Cheng-Der Chiang, San-Te Yang, Wen-Kuan Su

Proceedings Volume 6132, 61320L (2006) https://doi.org/10.1117/12.644432

KEYWORDS: Gallium, Aluminum, Vertical cavity surface emitting lasers, Reflectivity, Mirrors, Refractive index, Gallium arsenide, Wave propagation, Waveguides, Distributed Bragg reflectors

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The vertical cavity surface emitting laser (VCSEL) based on graded distributed Bragg reflectors (DBR) consisted of a top mirror of 20 pairs of Al_xGa_1-xAs/Al_yGa_1-yAs (x=0~0.9, y=0~0.12) quarter-wave stacks and a bottom mirror of 34 pairs of Al_yGa_1-yAs/Al_xGa_1-xAs quarter-wave stacks has been demonstrated. Using two proposed transfer matrix methods, the simulation of DBR reflectivity depending on temperature refractive index of Al_xGa_1-xAs and Al_yGa_1-yAs are discussed and investigated. The simulation results could be achieved to well predicted the DBR performance under operating temperature variances, i.e., the temperature on varying reflectivity and full width half maximum (FWHM), wavelength stop-band shifts of the laser reflector, where using the multi-layer films evolution software of essential Macleod and modified transfer matrix method, respectively. Under our simulation, assuming the physically VCSEL device feature such as the linear grading DBR structure sandwiched with a n-type GaAs substrate and air films, we have systematically studied the temperature effects on the key parameters of top and bottom DBR schemes. In contrast with the temperature dependent DBR on the 850nm-VCSEL characteristics simulated with the above two transfer methods, the temperature varying spectra of VCSEL are agreed with the our simulated results presented in this paper. Also the temperature dependent model of DBR based on refractive index of graded multi-Al_xGa_1-xAs/ Al_yGa_1-yAs has been proposed. So, a series of optoelectronic measurements experimentally confirm our results again. The maximum reflectivity of the top and bottom DBRs are 96.4 and 99.98%, respectively. The central wavelengths of the bandwidth spectra in the top and bottom DBR are same. i.e., 840nm. These results can be obtained the criteria for the high performance VCSEL design. The far-field patterns of transverse electromagnetic fields confined in <15μm active-layer aperture of selectively oxidized VCSEL have been observed.

Proceedings Article | 29 April 2003 Paper

Surface morphology and photoluminescence of InAs quantum dots grown on [110]-oriented streaked-islands under ultralow V/III ratio

Shiang Feng Tang, Shih Yen Lin, S. T. Yang, ChengDer Chiang, Ya-Tung Cherng, H. T. Shen, T. E. Nee, Ray Lin, Min Yu Hsu

Proceedings Volume 5118, (2003) https://doi.org/10.1117/12.498276

KEYWORDS: Indium arsenide, Gallium arsenide, Luminescence, Quantum dots, Indium, Atomic force microscopy, 3D image processing, Epitaxy, Vapor phase epitaxy, Natural surfaces

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Proceedings Article | 11 July 2000 Paper

Observation of self-assembled InAs/GaAs quantum dot structure with temperature-dependent photoluminescence and measurement of electrical characteristics

ShiangFeng Tang, Shih-Yen Lin, YuCheng Liao, Si-Chen Lee, Ya-Tung Cherng

Proceedings Volume 4078, (2000) https://doi.org/10.1117/12.392131

KEYWORDS: Quantum dots, Luminescence, Gallium arsenide, Superlattices, Indium arsenide, Optical properties, Temperature metrology, Heterojunctions, Semiconductors, Molecular beam epitaxy

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Showing 5 of 12 publications

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