Pattern dimension of photomask for flat panel display (FPD) is becoming finer year by year, and it can be seen the
movement to use phase shift mask in the critical layer to improve the transfer performance to the panel. For example,
transferring small contact holes with high accuracy, a high-transmission phase shift mask capable of obtaining stronger
phase shift effect may be required.
Currently, we are developing high-transmission phase shift mask blanks for i-line exposure using silicide-based material,
and we determined stable manufacturing conditions by investigating the relationship between amount of film-forming
process gas and optical properties such as refractive index n and extinction coefficient k. In addition, we confirmed that
the cross-sectional shape of this new silicide phase shift film is good, and it can be formed uniformly on large substrate.
In this paper, we will introduce the current development status of new silicide phase shift film and the differences from
MoSi phase shift film. Moreover, we will introduce high-precision Cr-Binary film suitable for this new silicide film as
well.
In this presentation we introduce photolithography for Flat Panel Display.
The conventional problem for large-size photomask blanks is uniformity. For a large area, it is really difficult to improve substrate flatness and PSM transmittance/phase shifting angle uniformity.
In this presentation we introduce our “Super Flat Mask (SFM) series” that have excellent flatness over G10 area.
We also introduce our Att-Phase Shift film over G10 area. These films have uniform optical characteristics and nearly orthogonal cross section after etching. Along with very flat substrates, these films contribute well to production of high resolution panels.
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