GaN-based photonic crystal surface-emitting lasers(PCSELs) with AlN/GaN distributed Bragg reflectors were
fabricated and analyzed. Different lasing characteristics of GaN-based PCSEL has been determeined and demonstrated
by the PC lattice constants. The laser emission behavior covered the whole PC patterns of 50 μm in diameter. Under the
optical pumping at room temperature, the PCSEL with PC lattice constant of 230nm shows a threshold energy density of
about 2.7 mJ/cm2. Above the threshold, one dominated peak emits at 420.11 nm with a linewidth of 1.1 Å. The lasing
wavelength emitted from PC lasers with different lattice constants occurs at the calculated band-edges provided by the
PC patterns which further shows different polarization angles due to the light diffracted in specific directions,
corresponding exactly to Γ, K, and M directions in the K-space. The PCSEL also shows a characteristic temperature of
148K and a spontaneous emission coupling efficiency β of about 5x10-3. Besides, the coupled-wave model in the PC
hexagonal-lattice is applied to distinguish the discrepancy in threshold power and the corresponding coupling coefficient.
The results show the lasing actions within Γ, K, and M modes have the substantial relation between the threshold energy
density and the coupling coefficient.
In the paper, we describe the fabrication and performance characteristics of GaN-based vertical-cavity surface-emitting lasers (VCSELs) by optical pumping and current injection. According to the employment of high-quality and high-reflectivity AlN/GaN DBRs in the whole structure, the lasing action of optically pumped GaN-based VCSELs with hybrid mirrors has been observed at room temperature. Due to the excellent results of optically pumped GaN-based VCSELs with hybrid mirrors, we further demonstrated the lasing behavior of GaN-based VCSELs by continuous-wave current injection at 77 K. The laser has one dominated blue wavelength located at 462 nm with a linewidth of about 0.15 nm and the threshold injection current at 1.4 mA. The divergence angle and polarization ratio of the GaN-based VCSELs with hybrid mirrors are about 11.7° and 80%, respectively. A larger spontaneous coupling efficiency of about 7.5×10-2 was also measured.
Characteristics of GaN-based photonic crystal surface-emitting lasers (PCSELs) were investigated and analyzed. We
demonstrated two different lattice constant of the GaN-based PCSEL. One with lattice constant of 290nm emits a blue
wavelength at 401.8 nm with a linewidth of 1.6 Angstrom and shows a threshold energy density about 2.7 mJ/cm2 under the
optical pumping at room temperature. The other with lattice constant of 234nm observed a wavelength at 423.8nm
with a linewidth of 1.1 Angstrom and energy density about 3.5 mJ/cm2. The laser emission covers whole circularly 2D PC
patterns (50 µm in diameter) with a small divergence angle. The lasing wavelength emitted from 2D PC lasers with
different lattice constants occurs at the calculated band-edges provided by the PC patterns. The characteristics of large
area, small divergence angle, and single mode emission from the GaN-based 2D surface-emitting PC lasers should be
promising in high power blue-violet emitter applications. The lasing wavelength emitted from PCSELs with different
lattice constants occurs at the calculated band-edges showing different polarization angles due to the light diffracted in
specific directions, corresponding exactly to Γ, K, and M directions in the K-space. Furthermore, the PCSEL also shows
a spontaneous emission coupling efficiency β of about 5x10-3 and a characteristic temperature of 148K.
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