Dr. Shinji Tarutani Profile

Dr. Shinji Tarutani

at FUJIFILM Corp

SPIE Involvement:

Author

Publications (26)

Proceedings Article | 17 April 2014 Paper

Novel EUV resist materials design for 14nm half pitch and below

Hideaki Tsubaki, Shinji Tarutani, Toru Fujimori, Hiroo Takizawa, Takahiro Goto

Proceedings Volume 9048, 90481E (2014) https://doi.org/10.1117/12.2046205

KEYWORDS: Extreme ultraviolet lithography, Polymers, Extreme ultraviolet, Line width roughness, Lithography, Diffusion, Optical lithography, Absorption, Surface roughness, Photoresist processing

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Polymers with a different Tg and activation energy were prepared to clarify influences of acid diffusion on resolution at 15 nm half-pitch (hp) and 14 nm hp using a EUV micro-field exposure tool (MET) at LBNL. Resolution on such a narrow pattern was limited by collapse and pinching. Clear relationship between pinching numbers and polymer Tg indicates that acid diffusion is one of major contributors on the pinching. In addition, polymers with a low thermal activation energy (Ea) on deprotection were effective for reducing pinching. This is probably originated from its high chemically amplification character even in low post-exposure bake (PEB) temperature to obtain both large chemical contrast and short acid diffusion. On the other hand, a good correlation between a cleanable outgassing amount and Ea indicates trade-off relationship between outgassing and resolution. Advantages of n-butyl acetate (nBA) developer have been investigated in viewpoint of dissolution uniformity. Surface roughness of a non-patterned resist film at half-exposed area, which was well correlated with LWR, was measured by AFM as indicator of uniformity in development process. To avoid any differences in resist chemistry other than development process, cross linking negative tone resist was applied for this study. The surface roughness obtained by nBA, which is conventional negative-tone imaging (NTI) developer, was 32 % lower than that obtained by 2.38 % TMAH solution. NTI resist system with a nBA developer and optimized resist reduced LWR from 4.8 nm to 3.0 nm in comparison with conventional positive tone resist with a 2.38 % TMAH developer. In addition, advantage on semi-dense trench patterning was well defined. New EUV sensitizer with 1.15 times higher EUV absorption resulted in 1.15 times higher acid yield by EUV exposure. Lithography performance of the new EUV sensitizer has been investigated by MET at SEMATECH Albany. Sensitivity was indeed improved from 20 mJ/cm² to 17 mJ/cm² according to the acid yield increase, but resolution was significantly degraded.

Proceedings Article | 1 April 2013 Paper

EUV resist materials design for 15nm half pitch and below

Hideaki Tsubaki, Shinji Tarutani, Naoki Inoue, Hiroo Takizawa, Takahiro Goto

Proceedings Volume 8679, 867905 (2013) https://doi.org/10.1117/12.2011357

KEYWORDS: Diffusion, Extreme ultraviolet lithography, Polymers, Line width roughness, Extreme ultraviolet, Contamination, Electron beam lithography, Semiconducting wafers, Lithography, Scanning electron microscopy

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Proceedings Article | 29 March 2013 Paper

LWR study on resist formulation parameters

Kyoungyoung Cho, Shinji Tarutani, Naoki Inoue, Hideaki Tsubaki, Mark Neisser

Proceedings Volume 8682, 868217 (2013) https://doi.org/10.1117/12.2011386

KEYWORDS: Line width roughness, Polymers, Amplifiers, Diffusion, Line edge roughness, Extreme ultraviolet, Semiconducting wafers, Photoresist processing, Extreme ultraviolet lithography, Molecules

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Proceedings Article | 29 March 2013 Paper

Negative tone imaging process and materials for EUV lighography

Shinji Tarutani, Wataru Nihashi, Shuuji Hirano, Natsumi Yokokawa, Hiroo Takizawa

Proceedings Volume 8682, 868214 (2013) https://doi.org/10.1117/12.2011384

KEYWORDS: Polymers, Nanoimprint lithography, Image processing, Photoresist processing, Extreme ultraviolet, Materials processing, Image resolution, Image quality, Imaging systems, Photomasks

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SPIE Journal Paper | 14 August 2012

Design considerations for ultraviolet-nanoimprint lithography resists

Kazuyuki Usuki, Satoshi Wakamatsu, Tadashi Oomatsu, Akiko Hattori, Kouji Shitabatake, Shinji Tarutani, Kunihiko Kodama, Hideto Tanabe

JM3, Vol. 11, Issue 3, 033008, (August 2012) https://doi.org/10.1117/12.10.1117/1.JMM.11.3.033008

KEYWORDS: Etching, Quartz, Resistance, Fluorine, Nanoimprint lithography, Lithography, Photoresist processing, Silicon, Dry etching, Contamination

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Proceedings Article | 21 March 2012 Paper

Design considerations for UV-NIL resists

Kazuyuki Usuki, Satoshi Wakamatsu, Tadashi Oomatsu, Akiko Hattori, Shinji Tarutani, Kunihiko Kodama, Hideto Tanabe, Kouji Shitabatake

Proceedings Volume 8323, 832305 (2012) https://doi.org/10.1117/12.915812

KEYWORDS: Etching, Quartz, Resistance, Nanoimprint lithography, Fluorine, Silicon, Photoresist processing, Dry etching, Contamination, Semiconducting wafers

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Proceedings Article | 8 March 2012 Paper

Functional resist materials for negative tone development in advanced lithography

Shinji Tarutani, Kana Fujii, Kei Yamamoto, Kaoru Iwato, Michihiro Shirakawa

Proceedings Volume 8325, 832505 (2012) https://doi.org/10.1117/12.916281

KEYWORDS: Etching, Lithography, Polymers, Resistance, Dry etching, Photoresist processing, Optical lithography, Photomasks, Scanning electron microscopy, Carbon

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Proceedings Article | 8 March 2012 Paper

EUV resist materials for 20nm and below half-pitch applications

Hideaki Tsubaki, Shinji Tarutani, Hiroo Takizawa, Takahiro Goto

Proceedings Volume 8325, 832509 (2012) https://doi.org/10.1117/12.916378

KEYWORDS: Polymers, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, Line width roughness, Electron beam lithography, Capillaries, Lithography, Research management, Diffusion

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Proceedings Article | 16 April 2011 Paper

High volume manufacturing capability of negative tone development process

Shinji Tarutani, Sou Kamimura, Kana Fujii, Keita Katou, Yuuichirou Enomoto

Proceedings Volume 7972, 79720N (2011) https://doi.org/10.1117/12.879391

KEYWORDS: Lithography, Photoresist processing, Electroluminescence, Photomasks, High volume manufacturing, Polymers, Semiconducting wafers, Line width roughness, Materials processing, Optical lithography

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Proceedings Article | 16 April 2011 Paper

Characterizing polymer bound PAG-type EUV resist

Hiroshi Tamaoki, Shinji Tarutani, Hideaki Tsubaki, Toshiya Takahashi, Naoki Inoue, Tooru Tsuchihashi, Hiroo Takizawa, Hidenori Takahashi

Proceedings Volume 7972, 79720A (2011) https://doi.org/10.1117/12.879394

KEYWORDS: Polymers, Diffusion, Line width roughness, Extreme ultraviolet lithography, Lithography, Semiconducting wafers, Nanoimprint lithography, Extreme ultraviolet, Polymer thin films, Research management

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Proceedings Article | 8 April 2011 Paper

Unraveling the effect of resist composition on EUV optics contamination

I. Pollentier, I. Neira, A.-M. Goethals, R. Gronheid, S. Tarutani, H. Tamaoki, H. Tsubaki, T. Takahashi

Proceedings Volume 7969, 79692L (2011) https://doi.org/10.1117/12.881214

KEYWORDS: Contamination, Polymers, Medium wave, Extreme ultraviolet lithography, Extreme ultraviolet, EUV optics, Photoresist materials, Resist chemistry, Chemistry, Semiconducting wafers

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SPIE Journal Paper | 1 October 2010

Comparing positive and negative tone development process for printing the metal and contact layers of the 32- and 22-nm nodes

Joost Bekaert, Lieve Van Look, Vincent Truffert, Frederic Lazzarino, Geert Vandenberghe, Mario Reybrouck, Shinji Tarutani

JM3, Vol. 9, Issue 04, 043007, (October 2010) https://doi.org/10.1117/12.10.1117/1.3524829

KEYWORDS: Photomasks, Printing, Scanning electron microscopy, Etching, Double patterning technology, Optical lithography, Semiconducting wafers, Lithography, Electroluminescence, Metals

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Proceedings Article | 31 March 2010 Paper

Study on acid diffusion length effect with PAG-blended system and anion-bounded polymer system

Shinji Tarutani, Hideaki Tsubaki, Hidenori Takahashi, Takayuki Itou, Kentaro Matsunaga, Gousuke Shiraishi, Toshiro Itani

Proceedings Volume 7639, 76391O (2010) https://doi.org/10.1117/12.846033

KEYWORDS: Polymers, Diffusion, Lithography, Line width roughness, Semiconducting wafers, Polymer thin films, Extreme ultraviolet lithography, Research management, Optical lithography, Photoresist processing

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Proceedings Article | 30 March 2010 Paper

Process parameter influence to negative tone development process for double patterning

Shinji Tarutani, Sou Kamimura, Jiro Yokoyama

Proceedings Volume 7639, 76391Q (2010) https://doi.org/10.1117/12.846027

KEYWORDS: Semiconducting wafers, Photoresist processing, Double patterning technology, Optical lithography, Etching, Image processing, Lithography, Photomasks, Dry etching, Inspection

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Proceedings Article | 30 March 2010 Paper

Study on approaches for improvement of EUV-resist sensitivity

Shinji Tarutani, Hideaki Tsubaki, Hidenori Takahashi, Takayuki Itou

Proceedings Volume 7639, 763909 (2010) https://doi.org/10.1117/12.846031

KEYWORDS: Polymers, Diffusion, Extreme ultraviolet, Absorption, Ionization, Electroluminescence, Extreme ultraviolet lithography, Yield improvement, Semiconducting wafers, Research management

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Proceedings Article | 26 March 2010 Paper

Resist material for negative tone development process

Shinji Tarutani, Sou Kamimura, Yuuichiro Enomoto, Keita Katou

Proceedings Volume 7639, 763904 (2010) https://doi.org/10.1117/12.846026

KEYWORDS: Polymers, Photoresist processing, Lithography, Double patterning technology, Etching, Diffusion, Surface plasmons, Image processing, Optical lithography, Dry etching

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Proceedings Article | 10 March 2010 Paper

Printing the metal and contact layers for the 32- and 22-nm node: comparing positive and negative tone development process

L. Van Look, J. Bekaert, V. Truffert, V. Wiaux, F. Lazzarino, M. Maenhoudt, G. Vandenberghe, Mario Reybrouck, Shinji Tarutani

Proceedings Volume 7640, 764011 (2010) https://doi.org/10.1117/12.848228

KEYWORDS: Printing, Photomasks, Scanning electron microscopy, Optical lithography, Etching, Semiconducting wafers, Lithography, Double patterning technology, Metals, Electroluminescence

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Proceedings Article | 4 March 2010 Paper

Advances in dual-tone development for pitch frequency doubling

Carlos Fonseca, Mark Somervell, Steven Scheer, Yuhei Kuwahara, Kathleen Nafus, Roel Gronheid, Shinji Tarutani, Yuuichiro Enomoto

Proceedings Volume 7640, 76400E (2010) https://doi.org/10.1117/12.846575

KEYWORDS: Floods, Semiconducting wafers, Photoresist processing, Photomasks, Image processing, Double patterning technology, Manufacturing, Printing, Optical lithography, Scanning electron microscopy

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Proceedings Article | 1 April 2009 Paper

Development of materials and processes for negative tone development toward 32-nm node 193-nm immersion double-patterning process

Shinji Tarutani, Tsubaki Hideaki, Sou Kamimura

Proceedings Volume 7273, 72730C (2009) https://doi.org/10.1117/12.814093

KEYWORDS: Line width roughness, Photoresist processing, Image processing, Double patterning technology, Photomasks, Semiconducting wafers, Particles, Polymers, Lithography, Materials processing

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Proceedings Article | 26 March 2008 Paper

Development of materials and processes for double patterning toward 32-nm node 193-nm immersion lithography process

Shinji Tarutani, Hideaki Tsubaki, Shinichi Kanna

Proceedings Volume 6923, 69230F (2008) https://doi.org/10.1117/12.771773

KEYWORDS: Polymers, Photoresist processing, Image processing, Double patterning technology, Line width roughness, Photomasks, Polymer thin films, Optical lithography, Second-harmonic generation, Etching

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Proceedings Article | 11 April 2006 Paper

Materials and process parameters study on ArF immersion defectivity

Shinichi Kanna, Haruki Inabe, Kei Yamamoto, Toshiaki Fukuhara, Shinji Tarutani, Hiromi Kanda, Wada Kenji, Kunihiko Kodama, Koji Shitabatake

Proceedings Volume 6153, 615308 (2006) https://doi.org/10.1117/12.657805

KEYWORDS: Digital watermarking, Polymers, Lithography, Materials processing, Water, Photoresist processing, Silicon films, Scanners, Liquids, Head

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Proceedings Article | 4 May 2005 Paper

Study and control of the interfacial mass transfer of resist components in 193-nm immersion lithography

Shinichi Kanna, Haruki Inabe, Kei Yamamoto, Shinji Tarutani, Hiromi Kanda, Kazuyoshi Mizutani, Kazuyuki Kitada, Seiji Uno, Yasumasa Kawabe

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.600490

KEYWORDS: Diffusion, Lithography, Immersion lithography, Polymers, Photoresist processing, Thermodynamics, Control systems, Semiconducting wafers, Molecules, Scanners

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Proceedings Article | 26 June 2003 Paper

Zero MEF hole formation with Atten-PSM and modified illumination

Shuji Nakao, Tadashi Miyagi, Shinji Tarutani, Shigenori Yamashita, Junji Miyazaki, Hidehiko Kozawa, Akira Tokui, Kouichirou Tsujita

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485323

KEYWORDS: Critical dimension metrology, Image resolution, Photomasks, Photography, Optical proximity correction, Tolerancing, Scanning electron microscopy, Lithographic illumination, Spatial resolution, Semiconducting wafers

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Proceedings Article | 12 June 2003 Paper

Below 70-nm contact hole pattern with RELACS process on ArF resist

Mamoru Terai, Toshiyuki Toyoshima, Takeo Ishibashi, Shinji Tarutani, Kiyohisa Takahashi, Yusuke Takano, Hatsuyuki Tanaka

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485167

KEYWORDS: Photoresist processing, Lithography, Semiconducting wafers, Image processing, Photomasks, Scanning electron microscopy, Polymers, Resolution enhancement technologies, Optical lithography, 193nm lithography

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Proceedings Article | 30 July 2002 Paper

Iso-focal characteristics of line patterns in dark field imaging

Shuji Nakao, Shinji Tarutani, Ayumi Minamide, Akira Tokui, Kouichirou Tsujita, Ichiriou Arimoto

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474548

KEYWORDS: Critical dimension metrology, Spherical lenses, Logic devices, Photomasks, Optical proximity correction, Printing, Phase shifts, Image transmission, Monochromatic aberrations, Resolution enhancement technologies

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Proceedings Article | 11 June 1999 Paper

Design of acid labile protecting groups in chemically amplified resists

Jun Fujita, Koshi Sasaki, Yasuhiro Kameyama, Yuzuru Chika, Takeshi Kashiwagi, Takaaki Niinomi, Yuki Tanaka, Shinji Tarutani, Tameichi Ochiai

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350245

KEYWORDS: Carbonates, Chemically amplified resists, Molybdenum, Lithography, Coating, Ions, Semiconducting wafers, Oxygen, Chemical analysis, Deep ultraviolet

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Showing 5 of 26 publications

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