Dr. Shinn-Sheng Yu Profile

Dr. Shinn-Sheng Yu

Technical Manager at Taiwan Semiconductor Manufacturing Co Ltd

SPIE Involvement:

Author

Publications (21)

SPIE Press Book | 7 April 2018

Optical Physics for Nanolithography

Shinn-Sheng Yu, Anthony Yen

KEYWORDS: Imaging systems, Diffraction, Optical imaging, Electromagnetic radiation, Spherical lenses, Magnetism, Polarization, Wave propagation, Geometrical optics, Photomasks

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Optical Physics for Nanolithography

Proceedings Article | 19 March 2015 Paper

Paper

An accurate method to determine the amount of out-of-band light in an EUV scanner

Shinn-Sheng Yu, Yen-Cheng Lu, Chih-Tsung Shih, Chia-Chun Chung, Shang-Chieh Chien, Shun-Der Wu, Norman Chen, Shu-Hao Chang, Hsiang-Yu Chou, Jui-Ching Wu, Tao-Ming Huang, Jack J. H. Chen, Anthony Yen

Proceedings Volume 9422, 94221T (2015) https://doi.org/10.1117/12.2085089

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Photomasks, Optical proximity correction, Reflectivity, Aluminum, Line width roughness, Light, Scanners, Light sources

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Proceedings Article | 13 March 2015 Paper

Paper

Mitigation of image contrast loss due to mask-side non-telecentricity in an EUV scanner

Chih-Tsung Shih, Shinn-Sheng Yu, Yen-Cheng Lu, Chia-Chun Chung, Jack J. H. Chen, Anthony Yen

Proceedings Volume 9422, 94220Y (2015) https://doi.org/10.1117/12.2085092

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Diffraction, Electroluminescence, Scanners, Lithography, Reflectivity, Extreme ultraviolet, Chromium, Resolution enhancement technologies

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Proceedings Article | 1 April 2013 Paper

Paper

Limitation of OAI + AttPSM in EUVL

Shinn-Sheng Yu, Yen-Cheng Lu, Chih-Tsung Shih, Jack J. Chen, Anthony Yen

Proceedings Volume 8679, 86791L (2013) https://doi.org/10.1117/12.2010943

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Electroluminescence, Lithographic illumination, Signal attenuation, Diffraction, Phase shifts, Extreme ultraviolet, Image enhancement, Projection systems

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Proceedings Article | 23 March 2012 Paper

Paper

The role resist plays in EUVL extensibility

Shinn-Sheng Yu, Anthony Yen, Chih-T'sung Shih, Yen-Cheng Lu, Shu-Hao Chang, Jui-Ching Wu, Jimmy Hu, Timothy Wu

Proceedings Volume 8322, 83222A (2012) https://doi.org/10.1117/12.916024

KEYWORDS: Extreme ultraviolet lithography, Electroluminescence, Diffusion, Lithography, Extreme ultraviolet, Modulation transfer functions, Nanoimprint lithography, Performance modeling, Photomasks, Image resolution

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Proceedings Article | 8 April 2011 Paper

Paper

On the extensibility of extreme UV lithography

Shinn-Sheng Yu, Anthony Yen, Shu-Hao Chang, Chih-T'sung Shih, Yen-Cheng Lu, Jimmy Hu, Timothy Wu

Proceedings Volume 7969, 79693A (2011) https://doi.org/10.1117/12.881586

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Electroluminescence, Extreme ultraviolet, Lithography, Phase shifts, Scanners, Optical lithography, Semiconducting wafers, Imaging systems

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Proceedings Article | 7 April 2011 Paper

Paper

Printability of buried mask defects in extreme UV lithography

Pei-Cheng Hsu, Ming-Jiun Yao, Wen-Chang Hsueh, Chia-Jen Chen, Shin-Chang Lee, Ching-Fang Yu, Luke Hsu, Sheng-Ji Chin, Jimmy Hu, Shu-Hao Chang, Chih-T'sung Shih, Yen-Cheng Lu, Timothy Wu, Shinn-Sheng Yu, Anthony Yen

Proceedings Volume 7969, 79691D (2011) https://doi.org/10.1117/12.881583

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Inspection, Etching, Extreme ultraviolet, Manufacturing, Deposition processes, Defect inspection, Chromium, Lithography

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Proceedings Article | 5 April 2007 Paper

Paper

OCD metrology by floating n/k

Shinn-Sheng Yu, Jacky Huang, Chih-Ming Ke, Tsai-Sheng Gau, Burn Lin, Anthony Yen, Lawrence Lane, Vi Vuong, Yan Chen

Proceedings Volume 6518, 65183C (2007) https://doi.org/10.1117/12.713341

KEYWORDS: Metrology, Semiconducting wafers, Critical dimension metrology, Lithography, Thin films, Scanning electron microscopy, Process control, Deposition processes, Roentgenium, Error analysis

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Proceedings Article | 21 March 2006 Paper

Paper

Systematic optimization of the thin-film stack by minimizing CD sensitivity

Shinn-Sheng Yu, Burn Lin, Anthony Yen, Chih-Ming Ke

Proceedings Volume 6154, 615440 (2006) https://doi.org/10.1117/12.658323

KEYWORDS: Thin films, Critical dimension metrology, Reflectivity, Lithography, Refractive index, Semiconducting wafers, Silicon, Optimization (mathematics), Process control, Semiconductor manufacturing

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SPIE Journal Paper | 1 October 2005

Thin-film optimization strategy in high numerical aperture optical lithography, part 2: applications to ArF

Shinn-Sheng Yu, Burn Lin, Anthony Yen

JM3, Vol. 4, Issue 04, 043004, (October 2005) https://doi.org/10.1117/12.10.1117/1.2137987

KEYWORDS: Thin films, Optical lithography, Reflection, Antireflective coatings, Immersion lithography, Refractive index, Critical dimension metrology, Scanners, Reflectivity, Wave propagation

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SPIE Journal Paper | 1 October 2005

Thin-film optimization strategy in high numerical aperture optical lithography, part 1: principles

Shinn-Sheng Yu, Burn Lin, Anthony Yen, Chih-Ming Ke, Te-Chih Huang, Bang-Chein Ho, Chun-Kuang Chen, Tsai-Sheng Gau, Hung-Chang Hsieh, Yao-Ching Ku

JM3, Vol. 4, Issue 04, 043003, (October 2005) https://doi.org/10.1117/12.10.1117/1.2137967

KEYWORDS: Thin films, Wave propagation, Magnetism, Optical lithography, Critical dimension metrology, Interfaces, Scanners, Absorption, Lithography, Multilayers

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Proceedings Article | 12 May 2005 Paper

Paper

Analytic theory of symmetric two-beam interference in high-NA optical lithography

Shinn-Sheng Yu, Burn Lin

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.601564

KEYWORDS: Beryllium, Electroluminescent displays, Optical lithography, Refraction, Lithography, Image acquisition, Image processing, Magnetism, Semiconductor manufacturing, Lithographic illumination

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Proceedings Article | 4 May 2005 Paper

Paper

Double exposure for the contact layer of the 65-nm node

Dah-Chung Owe-Yang, S. S. Yu, Harrison Chen, C. Chang, Bang-Chein Ho, John Lin, Burn Lin

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.599651

KEYWORDS: Image processing, Photomasks, Ultraviolet radiation, Optical lithography, Printing, Photoresist processing, Polymers, Semiconductors, Critical dimension metrology, Image resolution

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The critical dimension (CD) of contact holes for the 65-nm application specific integrated circuit (ASIC) is 100 nm according to the 2002 update of the International Technology Roadmap for Semiconductors. The common through-pitch depth of focus (DOF) of such contact holes is very small using the current ArF exposure tool. High-numerical-aperture (NA) ArF exposure tools are not expected to improve the common DOF that scales by the square of the numerical half aperture. High-transmission attenuated phase-shifting masks increase the DOF of isolated contact holes. Off-axis illumination such as annular or quadrupole illumination improves the DOF of dense contact holes. Nonetheless, both the isolated and the dense contact holes need to be printed within spec on logic circuit. To delineate 100-nm contact holes at several different pitches, we proposed the pack-and-unpack (PAU) process which employs double exposures. First, dummy holes are added to the surroundings of isolated contact holes facilitating the patterning of the resultant dense pattern with a resolution enhancement technique that favors dense contact holes. For example, dense holes are packed to 180-nm pitch and imaged with high-NA lens setting and quadrupole illumination. Then, the second image is used to open the desired holes or block the dummy contact holes. The purpose of this study was to develop new methods and new materials for the patterning of the second image. Three approaches were investigated. The first approach was forming an isolation layer to protect the first image; second, applying UV curing to harden the first image; third, using alcohol-based resists to pattern the second image. Among those three approaches of printing the second image, using resist in alcohols is the most convenient method. Even though the CD control of the second image is not so critical, resolution and process window of resists may need further improvement for 45-nm node and below. Using the second approach allows conventional ArF resists, which does not raise as many concerns as the alcohol-based resists. With the first approach, a lot more work is needed to prevent intermixing and reactions between the isolation layer and the resist for the second image. The results of this work point to the directions for material developments of the PAU process. Both the alcohol-based resists and UV curing are good approaches for PAU. Further characterizations such as DOF, exposure latitude (EL), and mask error factor (MEF) on them will be carried out in the near future.

Proceedings Article | 24 May 2004 Paper

Paper

90-nm lithography process characterization using ODP scatterometry technology

Chih-Ming Ke, Shinn-Sheng Yu, Yu-Hsi Wang, Yu-Jun Chou, Jeng-Horng Chen, Bih-Huey Lee, Hong-Yuan Chu, Hua-Tai Lin, Tsai-Sheng Gau, Chih-Hsiang Lin, Yao-Ching Ku, Burn Lin, Jacky Huang, J. Hsu, Victor Liu, Dave Hetzer, Lip Yap, Wenge Yang, Kaoru Araki

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.536123

KEYWORDS: Critical dimension metrology, Scanning electron microscopy, Semiconducting wafers, Transmission electron microscopy, Metrology, Scatterometry, Finite element methods, Process control, Lithography, Wafer-level optics

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SPIE Journal Paper | 1 April 2004

Mask error tensor and causality of mask error enhancement for low-k₁ imaging: theory and experiments

Chun-Kuang Chen, Tsai-Sheng Gau, Jaw-Jung Shin, Ru-Gun Liu, Shinn-Sheng Yu, Anthony Yen, Burn-Jeng Lin

JM3, Vol. 3, Issue 02, (April 2004) https://doi.org/10.1117/12.10.1117/1.1669508

KEYWORDS: Photomasks, Critical dimension metrology, Semiconducting wafers, Tolerancing, Error analysis, Scanners, Diffraction, Solids, Lithography, Electroluminescence

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Proceedings Article | 17 December 2003 Paper

Paper

Mask pattern fidelity quantification

Wen-Chuan Wang, Shih-Ming Chang, Chih-Cheng Chin, Chi-Lun Lu, Angus S.J. Chin, Hung-Chang Hsieh, Shinn-Sheng Yu

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518041

KEYWORDS: Photomasks, Optical proximity correction, Semiconducting wafers, Image processing, Lithography, Image analysis, Image enhancement, Scanning electron microscopy, Photoresist processing, Logic

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Proceedings Article | 2 June 2003 Paper

Paper

Application of scatterometry for CD and profile metrology in 193-nm lithography process development

Li-Jui Chen, Chih-Ming Ke, Shinn Sheng Yu, Tsai-Sheng Gau, Pei-Hung Chen, Yao Ching Ku, Burn Lin, Dan Engelhard, Dave Hetzer, Jason Yang, Kelly Barry, Lip Yap, Wenge Yang

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.483692

KEYWORDS: Scatterometry, Critical dimension metrology, Metrology, Lithography, Scanning electron microscopy, Semiconducting wafers, Deep ultraviolet, Scatter measurement, Reflectometry, Photoresist materials

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Proceedings Article | 30 July 2002 Paper

Paper

Mask error tensor and causality of mask error enhancement for low-k1 imaging: theory and experiments

Chun-Kuang Chen, Tsai-Sheng Gau, Jaw-Jung Shin, Ru-Gun Liu, Shinn Sheng Yu, Anthony Yen, Burn Lin

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474574

KEYWORDS: Photomasks, Critical dimension metrology, Semiconducting wafers, Mask making, Lithography, Tolerancing, Scanners, Optical lithography, Error analysis, Semiconductor manufacturing

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Proceedings Article | 14 September 2001 Paper

Paper

Trench pattern lithography for 0.13- and 0.10-um logic devices at 248-nm and 193-nm wavelengths

Ying-Ying Wang, Hua Tai Lin, Shinn Sheng Yu, Chun-Kuang Chen, Yao Ching Ku, Anthony Yen, Burn Lin

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435728

KEYWORDS: Atrial fibrillation, Optical proximity correction, Lithography, Photomasks, Lithographic illumination, Photoresist materials, Optical lithography, Logic devices, Optics manufacturing, SRAF

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Proceedings Article | 5 July 2000 Paper

Paper

0.13-um optical lithography for random logic devices using 248-nm attenuated phase-shifting masks

Yung-Tin Chen, Chia-Hui Lin, Hua Tai Lin, Hung-Chang Hsieh, Shinn Sheng Yu, Anthony Yen

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.388927

KEYWORDS: Optical proximity correction, Atrial fibrillation, Photomasks, Line edge roughness, Phase shifts, Electroluminescence, Optical lithography, Logic devices, Scanners, Lithography

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Proceedings Article | 26 July 1999 Paper

Paper

Study of pupil filters for depth of focus enhancement in printing contact holes

Chun-Ming Wang, Shinn Sheng Yu, Anthony Yen

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354396

KEYWORDS: Image filtering, Nanoimprint lithography, Printing, Point spread functions, Optical filters, Bessel functions, Photomasks, Binary data, Linear filtering, Lithography

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Showing 5 of 21 publications

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