Anti-sticking efficiency remains a key issue in nanoimprint lithography. In order to address this problem, a selfassembled
monolayer (SAM) of a fluorinated silane release agent is generally applied to the stamp surface, either in wet
or in vapour phase. We present here the study on vapour deposition of (tridecafluoro-1,1,2,2-tetrahydrooctyl)TriChloroSilane (F13-TCS) and wet and vapour deposition of a commercial product, OPTOOL DSX from Daikin. They are both fluorinated silanes used for the formation of anti-adhesive layers in nanoimprint lithography. Results will be compared in term of anti-adhesion properties and homogeneity for the obtained layers. Characterizations
are made by means of contact angle measurements, Fourier Transform Infra-Red analysis and Atomic Force Microscopy
observations. The vapour phase deposition of F13-TCS allows us to reach surface energies as low as 11mN/m without
increasing initial roughness. OPTOOL DSXTM deposition in wet phase presents comparable results, but with an
increased roughness mainly due to the deposition procedure. The durability of the formed layers was investigated as a
function of number of prints. For both materials, a significant degradation of the anti-adhesion properties occurs after
few imprinted dies.
The paper addresses two microwave photonics functionalities based on device potentialities. The first one is
related to the specific use of a mode locked (multi-section) laser diode in the analog domain where different modulation
functions can be achieved. The second one deals with the specific design of a photodetector aiming to separately detect
multiple modulated input beams and to group the resulting photocurrents into a single one. This leads to build an
optoelectronic "add" function that can be used, for example, in microwave photonics signal processing applications such
as optical beamforming networks for phased array antennas.
A uniform Bragg grating as dispersive device of InGaAsP/InP integrated chirped pulse compressors are studied. Results of numerical analysis for the propagation of chirped ultrafast pulses are presented. The compression factor and the length of the device have been designed looking for an optimum behaviour for a monolithic implementation in a 40 GHz mode-locked diode laser.
In this work we present a new mode-locked device that can be used for millimeter-wave photonic applications. Such device presents for certain bias conditions a dual-mode behavior we have investigated for millimeter wave generation. Through the small signal analysis of the device, we have identified a resonance at the frequency separation of the longitudinal modes that has allowed us to demonstrate signal transmission at 40 GHz. The millimeter wave signal generated in detection is studied in terms of phase noise and the noise intrinsic to the emitter.
In this work we present a new mode-locked device that can be used for photonic millimetre-wave applications, and more specifically optoelectronic mixing. This device is based on a mode-locked MQW-DFB multisection laser that presents for certain bias conditions a dual longitudinal mode behavior (39.5 GHz separation) that can be used for mm-wave generation and transmission. In this work we focus on the possibility of achieving optoelectronic mixing using this new device through the injection of an intermediate frequency (IF) signal in one of the sections (absorber) while the gain section is used to mode-locked the two longitudinal modes by injecting a signal at 39.5 GHz. Demonstration of the optical up-conversion is carried out through the study of the modulation sidebands for different IF frequencies and a spurious free dynamic range (SFDR) of 65dB-HZ2/3 has been measured. Transmission of an up-converted NRZ 32Mbps PRBS signal using this device for optical mixing is also demonstrated.
We present here the design, fabrication and first measurements of integrated Bragg grating apodized filters, operating at a free-space wavelength of about 1550 nm, based on InP material line ridge waveguides. Their apodized transmission spectra are obtained by the mean of sampled grating structures.
The fabrication process by means of electron beam lithography will be described. It has been used to realize the sampled gratings which are spatially localized on the wafer.
The transmission spectrum of the filters is measured. The transmission dip is almost -30 dB over almost 0.25 nm which is in a good agreement with theoretical calculations. The suppression is better than 20dB outside a bandwidth of almost 1nm, whereas a uniform grating with the same dimensions only presents almost 10dB suppression outside the same bandwidth.
We have investigated the characteristics of 1550 nm GaInAsP/InP multiple quantum well (MQW) structures to be used as the gain medium in monolithic mode-locked lasers. For this purpose, a series of laser structures with 3 QWs, 5 QWs and 8 QWs were grown and processed into ridge waveguide lasers. The impact of the quantum well number was studied by analyzing the changes in threshold current, external quantum efficiencies, gain-spectra and linewidth enhancement factors, which are valuable in design and modeling of the mode-locked lasers. Monolithic 20 GHz mode-locked lasers were fabricated. Pulse trains with a good extinction ratio of 14.8 dB and less than 14 ps in width were demonstrated, and an average power of 1 mW could be coupled into an optical fiber.
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