We examined the potential of amorphous Ge-Bi-Se chalcogenide films prepared from RF magnetron co-sputtering.(Co)-sputtered films’ compositions were analysed using EDX spectroscopy. Pre-deposition calculations were used to find the expected composition, and a good agreement with experimentally determined compositions were observed. The amorphous to crystalline phase change in films were closely examined by XRD analysis and Raman spectroscopy in terms of atomic % of Ge by slowly increasing the GeSe2 contribution during co-sputtering. The influence of the composition on the optical band gap energy, refractive index and transmission spectra were also analysed using variable angle spectroscopic ellipsometry(VASE) and spectrophotometry analysis from visible to mid-IR. Third-order nonlinear optical parameters of the co-sputtered films were estimated using Sheik-Bahae formalism. The ridge waveguides were fabricated from RF magnetron co-sputtered Ge-Bi-Se films on Si/SiO2 substrate to obtain single-mode waveguides at 1.55 μm.
Financial support from Czech Science Foundation and European Union’s Horizon Europe Framework Programme under grant agreement No 101092723 is greatly acknowledged.
Phase change memory thin films from Ge-Sb-Te system with large (GeTe):(Sb2Te3) ratio have been deposited via UV pulsed laser deposition technique. The studied compositions were Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15. Physico-chemical properties of the Ge-Sb-Te thin films, based on the scanning electron microscopy with energydispersive X-ray analysis, X-ray diffraction and reflectometry, atomic force microscopy, optical reflectivity, sheet resistance temperature dependences, and variable angle spectroscopic ellipsometry measurements, were studied in order to assess the effect of chemical composition of the deposited layers. All the obtained data confirm the importance of GeTe content in (GeTe)1-x(Sb2Te3)x thin films.
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