Dr. Stephan Lutgen Profile

Dr. Stephan Lutgen

uLED Architect and Platform Lead

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Publications (14)

Proceedings Article | 17 February 2011 Paper

Recent results of blue and green InGaN laser diodes for laser projection

Stephan Lutgen, Dimitri Dini, Ines Pietzonka, Soenke Tautz, Andreas Breidenassel, Alfred Lell, Adrian Avramescu, Christoph Eichler, Teresa Lermer, Jens Müller, Georg Bruederl, Alvaro Gomez-Iglesias, Uwe Strauss, Wolfgang Scheibenzuber, Ulrich Schwarz, Bernhard Pasenow, Stephan Koch

Proceedings Volume 7953, 79530G (2011) https://doi.org/10.1117/12.874757

KEYWORDS: Semiconductor lasers, Laser damage threshold, Diodes, Indium gallium nitride, Gallium nitride, Laser applications, Pulsed laser operation, Waveguides, Temperature metrology, Continuous wave operation

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Mobile laser projection is of great commercial interest. Today, a key parameter in embedded mobile applications is the optical output power and the wall plug efficiency of blue and green lasers. We report on improvements of the performance of true blue riedge waveguide InGaN lasers at 452nm with cw-output power up to 800mW in overstress and mono mode operation up to 500mW in a temperatures range of 20°C to 80°C. We succeeded in high and almost temperature independent wall plug efficiencies >20% at stable output power levels from 200 to 500mW in cw-operation. Due to several improvements of our blue laser diodes we now estimate life times is in the order of 40khrs for 80mW output power in cw-operation at 40°C. Additional overstress degradation tests at power levels up to 200mW show a strong dependency of lifetime with output power. Furthermore, we present pioneering results on true green InGaN laser diodes on c-plane GaN-substrates. The technological challenge is to achieve In-rich InGaN-quantum wells with sufficiently high material quality for lasing. We investigated the competing recombination processes below laser threshold like nonradiative defect recombination by electro-optical measurements, such confirming that low defect densities are essential for stimulated emission. A model for alloy fluctuations in In-rich InGaN-MQWs based on spectral and time resolved photoluminescence measurements yields potential fluctuations in the order of E₀=57meV for our blue laser diodes. To get a closer insight into the physics of direct green InGaN-Laser we investigated the inhomogeneous broadening of experimentally measured gain curves via Hakki-Paoli-measurements in comparison to calculated gain spectra based on microscopic theory showing the importance of strong LO-phonon coupling in this material system. Investigations of current dependent gain measurements and calculations yield a factor of 2 higher inhomogeneous broadening for our green lasers than for our blue laser diodes on c-plane GaN. Based on the improvements of the material quality and design we demonstrate true green InGaN-Laser in cw-operation at 522nm with more than 80mW output power on c-plane GaN. The combination of low laser threshold ~60-80mA, high slope efficiency ~0.65W/A and low operating voltage 6.9-6.4V of our green monomode RWG-Laser results in a high wall plug efficiency of 5-6% in a temperature range of 20-60°C.

Proceedings Article | 11 March 2010 Paper

Analytical methods to study loss mechanisms and lifetime investigations of blue InGaN laser diodes

J. Müller, G. Brüderl, M. Schillgalies, A. Breidenassel, S. Tautz, D. Dini, T. Lermer, S. Lutgen, U. Strauß

Proceedings Volume 7602, 760222 (2010) https://doi.org/10.1117/12.842130

KEYWORDS: Indium gallium nitride, Semiconductor lasers, Testing and analysis, Laser damage threshold, Quantum wells, Gallium nitride, Applied physics, Quantum efficiency, Laser applications, Light sources

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Proceedings Article | 18 February 2010 Paper

High-performance at low cost: the challenge manufacturing frequency doubled green semiconductor lasers for mass markets

T. Hoefer, M. Schmitt, T. Schwarz, M. Kuehnelt, R. Schulz, I. Pietzonka, H. Lindberg, C. Lauer, S. Lutgen, U. Steegmueller, U. Strauss

Proceedings Volume 7582, 758207 (2010) https://doi.org/10.1117/12.842494

KEYWORDS: Semiconductor lasers, Laser applications, Projection systems, Modulation, Silicon, Reliability, Mirrors, Crystals, Heads up displays, Laser damage threshold

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Proceedings Article | 12 February 2010 Paper

Progress of blue and green InGaN laser diodes

Stephan Lutgen, Adrian Avramescu, Teresa Lermer, Marc Schillgalies, Desiree Queren, Jens Müller, Dimitri Dini, Andreas Breidenassel, Uwe Strauss

Proceedings Volume 7616, 76160G (2010) https://doi.org/10.1117/12.842131

KEYWORDS: Semiconductor lasers, Continuous wave operation, Indium gallium nitride, Diodes, Gallium nitride, Pulsed laser operation, Laser damage threshold, Electroluminescence, Waveguides, Charged particle optics

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Proceedings Article | 19 February 2009 Paper

Temperature dependence of blue InGaN lasers

Stefanie Brüninghoff, Sönke Tautz, Matthias Sabathil, Désirée Queren, Stephan Lutgen, Uwe Strauß

Proceedings Volume 7216, 72161C (2009) https://doi.org/10.1117/12.807979

KEYWORDS: Temperature metrology, Semiconductor lasers, Laser damage threshold, Indium gallium nitride, Quantum wells, Resistance, Continuous wave operation, Doping, Cell phones, Laser applications

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Proceedings Article | 8 May 2008 Paper

High power semiconductor disk laser with monolithically integrated pump lasers

Wolfgang Diehl, Tony Albrecht, Peter Brick, Michael Furitsch, Stefan Illek, Stephan Lutgen, Ines Pietzonka, Johann Luft, Wolfgang Stolz

Proceedings Volume 6997, 699711 (2008) https://doi.org/10.1117/12.781018

KEYWORDS: Semiconductor lasers, Disk lasers, Semiconductors, Transparent conductors, Absorption, Modes of laser operation, High power lasers, Semiconducting wafers, Pulsed laser operation, Continuous wave operation

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Proceedings Article | 15 February 2008 Paper

True-blue InGaN laser for pico size projectors

U. Strauβ, S. Brüninghoff, M. Schillgalies, C. Vierheilig, N. Gmeinwieser, V. Kümmler, G. Brüderl, S. Lutgen, A. Avramescu, D. Queren, D. Dini, C. Eichler, A. Lell, U. Schwarz

Proceedings Volume 6894, 689417 (2008) https://doi.org/10.1117/12.761720

KEYWORDS: Indium gallium nitride, Magnesium, Laser damage threshold, Quantum wells, Semiconductor lasers, Luminescence, Reflectivity, Projection systems, Doping, Laser applications

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Proceedings Article | 13 February 2007 Paper

Measurement of the internal quantum efficiency of InGaN quantum wells

A. Laubsch, M. Sabathil, G. Bruederl, J. Wagner, M. Strassburg, E. Baur, H. Braun, U. Schwarz, A. Lell, S. Lutgen, N. Linder, R. Oberschmid, B. Hahn

Proceedings Volume 6486, 64860J (2007) https://doi.org/10.1117/12.700829

KEYWORDS: Quantum wells, Gallium nitride, Indium gallium nitride, Temperature metrology, Doping, Light emitting diodes, Luminescence, Internal quantum efficiency, Electron holes, Magnesium

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Proceedings Article | 14 March 2005 Paper

Green semiconductor disk laser with 0.7W cw output power

Stephan Lutgen, Michael Kuehnelt, Ulrich Steegmueller, Peter Brick, Tony Albrecht, Wolfgang Reill, Johann Luft, Bernadette Kunert, Stefan Reinhard, Kerstin Volz, Wolfgang Stolz

Proceedings Volume 5737, (2005) https://doi.org/10.1117/12.590069

KEYWORDS: Semiconductor lasers, Semiconductors, Disk lasers, Continuous wave operation, Second-harmonic generation, Optical pumping, Optical semiconductors, Mirrors, Infrared lasers, Visible radiation

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Proceedings Article | 1 September 2004 Paper

Multiwatt semiconductor disk lasers for near-infrared wavelengths

Peter Brick, Stephan Lutgen, Tony Albrecht, Wolfgang Reill, Johann Luft, Werner Spath, Bernardette Kunert, Stefan Reinhard, Kerstin Volz, Wolfgang Stolz

Proceedings Volume 5452, (2004) https://doi.org/10.1117/12.544235

KEYWORDS: Semiconductor lasers, Semiconductors, Disk lasers, Resistance, Laser optics, Continuous wave operation, Mirrors, Optical semiconductors, Solid state lasers, Solid state electronics

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Proceedings Article | 19 June 2003 Paper

High-efficiency high-power semiconductor disc laser

Peter Brick, Stephan Lutgen, Tony Albrecht, Johann Luft, Werner Spath

Proceedings Volume 4993, (2003) https://doi.org/10.1117/12.479463

KEYWORDS: Semiconductor lasers, Semiconductors, High power lasers, Laser optics, Resistance, Optical semiconductors, Mirrors, Continuous wave operation, Luminescence, Solids

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Proceedings Article | 19 June 2003 Paper

Modeling and experimental result analysis for high-power VECSELs

Aramais Zakharian, Joerg Hader, Jerome Moloney, Stephan Koch, Stephan Lutgen, Peter Brick, Tony Albrecht, Stefan Grotsch, Johann Luft, Werner Spath

Proceedings Volume 4993, (2003) https://doi.org/10.1117/12.479503

KEYWORDS: Quantum wells, Semiconductors, Semiconductor lasers, Thermal modeling, Optical pumping, Absorption, Resistance, Refractive index, Continuous wave operation, Mirrors

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Proceedings Article | 29 April 1999 Paper

VCSELs for datacom applications

Torsten Wipiejewski, Hans-Dieter Wolf, Lutz Korte, Wolfgang Huber, Guenter Kristen, Charlotte Hoyler, Harald Hedrich, Oliver Kleinbub, Tony Albrecht, Juergen Mueller, Andreas Orth, Zeljko Spika, Stephan Lutgen, Hartwig Pflaeging, Joerg Harrasser, Karsten Droegemueller, Volker Plickert, Detlef Kuhl, Juergen Blank, Doris Pietsch, Herwig Stange, Holger Karstensen

Proceedings Volume 3627, (1999) https://doi.org/10.1117/12.347093

KEYWORDS: Vertical cavity surface emitting lasers, Data communications, Oxides, Channel projecting optics, Reliability, Resistance, Mirrors, Eye, Semiconductors, Semiconductor lasers

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Proceedings Article | 23 April 1998 Paper

Ultrafast coherent and incoherent dynamics of intersubband excitations in quasi-two-dimensional semiconductors

Thomas Elsaesser, Robert Kaindl, Stephan Lutgen, Michael Woerner, Andreas Hase, Harald Kuenzel

Proceedings Volume 3277, (1998) https://doi.org/10.1117/12.306140

KEYWORDS: Scattering, Picosecond phenomena, Absorption, Quantum wells, Phonons, Polarization, Mid-IR, Ultrafast phenomena, Plasma, Femtosecond phenomena

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Showing 5 of 14 publications

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