Mr. Stijn W. H. K. Steenbrink Profile

Stijn W. H. K. Steenbrink

at MAPPER Lithography

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Author

Publications (11)

Proceedings Article | 16 August 2019 Presentation

Performance validation of Mapper’s FLX-1200 (Conference Presentation)

Marco Wieland, Jonathan Pradelles, Stéfan Landis, Laurent Pain, Guido Rademaker, Isabelle Servin, Guido De Boer, Pieter Brandt, Remco J. Jager, Stijn W. H. Steenbrink

Proceedings Volume 10958, 109580I (2019) https://doi.org/10.1117/12.2514920

KEYWORDS: Wafer-level optics, Semiconducting wafers, Critical dimension metrology, Electron beams, Optical alignment, Maskless lithography, Switching, Electron beam lithography, Standards development, Lithography

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Mapper has installed its first product, the FLX–1200, at CEA-Leti in Grenoble (France). This is a maskless lithography system, based on massively parallel electron-beam writing with high-speed optical data transport for switching the electron beams. The FLX-1200, containing 65,000 parallel electron beams, has a 1 wph throughput at 300 mm wafers and is capable of patterning any resolution and any different type of structure all the way down to 28 nm node patterns. The system has an optical alignment system enabling mix-and-match with optical 193 nm immersion system using standard NVSM marks. Mapper Lithography and CEA-Leti are collaborating to develop turnkey solution for specific applications. In figure 1 the basic operation principle of the Mapper technology is shown. The electron optics have no central crossovers making them intrinsically insensitive to Coulomb forces (electron repulsion). The electron optics are modular and much cheaper than high-NA DUV optics, and can be replaced or upgraded in the field. The wafer exposure happens one column of fields at a time and always in the same direction. There is no need to meander. The focus and leveling is performed during stage fly-back to reduce metrology overhead. Each column of fields is aligned separately, with dedicated alignment targets. Figure 1, Basic operation of the Mapper technology. In figure 2 the way the beams are distributed over the electron optics slit is shown. The writing strategy is as follows: - There are up to 5 slits, staggered in X direction for reasons of wafer coverage. The approach is roughly analogous to an inkjet printer - Each slit area consists of 204 x 13 individual groups of beamlets, organized in a hexagonal array. - All beamlets are simultaneously horizontally deflected over a range of 2µm while the wafer is scanned vertically. - Each group comprises 49 individual beamlets (7x7). Each of the 49 beamlets can independently be switched on and off during exposure. - Each beamlet results in a Gaussian spot on the wafer with 25 nm FW50 diameter (10.6nm 1). - Total beamlet count will therefore equal 5 x 204x13 x 49 = 649,740. In the FLX-1200 and FLX-1300 the central 10% are used (one half slit area): 65,000 A more detailed description of the principles of operation is given in [2]. Figure 2,Distribution of the beams over the electron optics slit. The focus of presentation will be the reporting of the performance achieved of the tool installed at CEA-Leti during endurance runs in full tool configuration. This includes status of: - Exposure throughput - Achieved resolution and CD uniformity - Stitching performance - Matched Machine Overlay - Tool availability and uptime Also the different application areas for such a maskless system are discussed. In figure 3 a preview of a CD uniformity measurement result is shown. On a 300 mm wafer fields of 5mm x 5mm have been exposed containing 60nm dense lines and spaces. The main source of CD variation is caused by differences between the groups of beamlets. To measure this variation we have taken 824 SEM images, each taken of a pattern written by a different beam group. The result is shown in figure 3. The variation is 8nm 3s, and follows a Gaussian distribution of 6nm 3s. Figure 3, Distribution of 824 CD measurements results on 60nm dense lines and spaces

Proceedings Article | 19 September 2018 Paper

Performance validation of Mapper FLX-1200

Jonathan Pradelles, Yoann Blancquaert, Stefan Landis, Laurent Pain, Guido Rademaker, Isabelle Servin, Guido de Boer, Pieter Brandt, Michel Dansberg, Remco Jager, Jerry Peijster, Erwin Slot, Stijn Steenbrink, Marco Wieland

Proceedings Volume 10775, 1077507 (2018) https://doi.org/10.1117/12.2324054

KEYWORDS: Semiconducting wafers, Overlay metrology, Prototyping, Optical scanning, Scanning electron microscopy, Lithography, Line width roughness, Optical alignment, Electron beams, Silicon

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Proceedings Article | 19 March 2018 Presentation + Paper

Performance validation of Mapper's FLX-1200

Marco Wieland, Guido de Boer, Pieter Brandt, Michel Dansberg, Remco Jager, Jerry Peijster, Erwin Slot, Stijn Steenbrink, Yoann Blancquaert, Stefan Landis, Laurent Pain, Jonathan Pradelles, Guido Rademaker, Isabelle Servin

Proceedings Volume 10584, 105840G (2018) https://doi.org/10.1117/12.2300816

KEYWORDS: Semiconducting wafers, Line width roughness, Optical alignment, Overlay metrology, Electron beams, Electron beam lithography

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Proceedings Article | 27 April 2017 Presentation

Overlay performance assessment of MAPPER's FLX-1200 (Conference Presentation)

Ludovic Lattard, Isabelle Servin, Jonathan Pradelles, Yoann Blancquaert, Guido Rademaker, Laurent Pain, Guido de Boer, Pieter Brandt, Michel Dansberg, Remco J. Jager, Jerry J. Peijster, Erwin Slot, Stijn W. H. Steenbrink, Niels Vergeer, Marco Wieland

Proceedings Volume 10144, 101440N (2017) https://doi.org/10.1117/12.2260878

KEYWORDS: Semiconducting wafers, Lithography, Electron beam lithography, Photomasks, Switching, Electron beams, Lithographic illumination, Integrated optics, Optical alignment, Wafer-level optics

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Mapper Lithography has introduced its first product, the FLX–1200, which is installed at CEA-Leti in Grenoble (France). This is a mask less lithography system, based on massively parallel electron-beam writing with high-speed optical data transport for switching the electron beams. This FLX platform is initially targeted for 1 wph performance for 28 nm technology nodes, but can also be used for less demanding imaging. The electron source currently integrated is capable of scaling to 10 wph at the same resolution performance, which will be implemented by gradually upgrading the illumination optics. The system has an optical alignment system enabling mix-and-match with optical 193 nm immersion systems using standard NVSM marks. The tool at CEA-Leti is in-line with a Sokudo Duo clean track. Mapper Lithography and CEA-Leti are working in collaboration to develop turnkey solution for specific applications. At previous conferences we have presented imaging results including 28nm node resolution, cross wafer CDu of 2.5nm 3 and a throughput of half a wafer per hour, overhead times included. At this conference we will present results regarding the overlay performance of the FLX-1200. In figure 2 an initial result towards measuring the overlay performance of the FLX-1200 is shown. We have exposed a wafer twice without unloading the wafer in between exposures. In the first exposure half of a dense dot array is exposed. In the second exposure the remainder of the dense dot array is exposed. After development the wafer has been inspected using a CD-SEM at 480 locations distributed over an area of 100mm x 100mm. For each SEM image the shift of the pattern written in the first exposure relative to the pattern written in the second exposure is measured. Cross wafer this shift is 7 nm u+3s in X and 5 nm u+3s in Y. The next step is to evaluate the impact of unloading and loading of the wafer in between exposures. At the conference the latest results will be presented.

Proceedings Article | 26 March 2013 Paper

MAPPER: progress toward a high-volume manufacturing system

G. de Boer, M. Dansberg, R. Jager, J. J. M. Peijster, E. Slot, S. W. H. K. Steenbrink, M. Wieland

Proceedings Volume 8680, 86800O (2013) https://doi.org/10.1117/12.2011486

KEYWORDS: Electron beam lithography, Semiconducting wafers, Collimators, Electron beams, Wafer-level optics, Lithography, High volume manufacturing, Data corrections, Maskless lithography, Switching

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Proceedings Article | 1 April 2010 Paper

MAPPER: high-throughput maskless lithography

M. Wieland, G. de Boer, G. ten Berge, M. van Kervinck, R. Jager, J. J. Peijster, E. Slot, S. W. H. Steenbrink, T. Teepen, B. Kampherbeek

Proceedings Volume 7637, 76370F (2010) https://doi.org/10.1117/12.849480

KEYWORDS: Semiconducting wafers, Electron beams, Maskless lithography, Polymethylmethacrylate, Collimators, Wafer-level optics, Lens design, Electron beam lithography, Lithography, Switching

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Proceedings Article | 12 December 2009 Paper

Imaging performance of production-worthy multiple-E-beam maskless lithography

S. J. Lin, W. C. Wang, Jack Chen, Faruk Krecinic, Burn Lin, Guido de Boer, Erwin Slot, Remco Jager, Stijn Steenbrink, Bert-Jan Kampherbeek, Marco Wieland

Proceedings Volume 7520, 752009 (2009) https://doi.org/10.1117/12.838573

KEYWORDS: Maskless lithography, Semiconducting wafers, Electron beam lithography, Line width roughness, Critical dimension metrology, Finite element methods, Manufacturing, Electron beams, Photomasks, Image resolution

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Proceedings Article | 27 May 2009 Paper

Mapper: high throughput maskless lithography

V. Kuiper, B. Kampherbeek, M. Wieland, G. de Boer, G. ten Berge, J. Boers, R. Jager, T. van de Peut, J. J. M. Peijster, E. Slot, S. W. H. K. Steenbrink, T. Teepen, A. H. V. van Veen

Proceedings Volume 7470, 74700Q (2009) https://doi.org/10.1117/12.835188

KEYWORDS: Electron beam lithography, Electron beams, Semiconducting wafers, Lithography, Maskless lithography, Wafer-level optics, Optical lithography, Double patterning technology, Collimators, Photomasks

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Proceedings Article | 18 March 2009 Paper

MAPPER: high-throughput maskless lithography

M. Wieland, G. de Boer, G. ten Berge, R. Jager, T. van de Peut, J. Peijster, E. Slot, S. Steenbrink, T. Teepen, A. H. V. van Veen, B. J. Kampherbeek

Proceedings Volume 7271, 72710O (2009) https://doi.org/10.1117/12.814025

KEYWORDS: Semiconducting wafers, Electron beams, Electron beam lithography, Wafer-level optics, Lithography, Maskless lithography, Semiconductors, Electrodes, Manufacturing, Optical lithography

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Maskless electron beam lithography, or electron beam direct write, has been around for a long time in the semiconductor industry and was pioneered from the mid-1960s onwards. This technique has been used for mask writing applications as well as device engineering and in some cases chip manufacturing. However because of its relatively low throughput compared to optical lithography, electron beam lithography has never been the mainstream lithography technology. To extend optical lithography double patterning, as a bridging technology, and EUV lithography are currently explored. Irrespective of the technical viability of both approaches, one thing seems clear. They will be expensive [1]. MAPPER Lithography is developing a maskless lithography technology based on massively-parallel electron-beam writing with high speed optical data transport for switching the electron beams. In this way optical columns can be made with a throughput of 10-20 wafers per hour. By clustering several of these columns together high throughputs can be realized in a small footprint. This enables a highly cost-competitive alternative to double patterning and EUV alternatives. In 2007 MAPPER obtained its Proof of Lithography milestone by exposing in its Demonstrator 45 nm half pitch structures with 110 electron beams in parallel, where all the beams where individually switched on and off [2]. In 2008 MAPPER has taken a next step in its development by building several tools. The objective of building these tools is to involve semiconductor companies to be able to verify tool performance in their own environment. To enable this, the tools will have a 300 mm wafer stage in addition to a 110-beam optics column. First exposures at 45 nm half pitch resolution have been performed and analyzed. On the same wafer it is observed that all beams print and based on analysis of 11 beams the CD for the different patterns is within 2.2 nm from target and the CD uniformity for the different patterns is better than 2.8 nm.

Proceedings Article | 3 April 2008 Paper

MAPPER: high throughput maskless lithography

E. Slot, M. Wieland, G. de Boer, P. Kruit, G. ten Berge, A. Houkes, R. Jager, T. van de Peut, J. Peijster, S. Steenbrink, T. Teepen, A. van Veen, B. Kampherbeek

Proceedings Volume 6921, 69211P (2008) https://doi.org/10.1117/12.771965

KEYWORDS: Semiconducting wafers, Electron beams, Wafer-level optics, Critical dimension metrology, Optics manufacturing, Lithography, Maskless lithography, Scanning electron microscopy, Silicon, Electron beam lithography

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Proceedings Article | 28 March 2008 Paper

High throughput maskless lithography: low voltage versus high voltage

S. W. H. Steenbrink, B. Kampherbeek, M. Wieland, J. Chen, S. Chang, M. Pas, J. Kretz, C. Hohle, D. van Steenwinckel, S. Manakli, J. Le-Denmat, L. Pain

Proceedings Volume 6921, 69211T (2008) https://doi.org/10.1117/12.771971

KEYWORDS: Semiconducting wafers, Scattering, Silicon, Critical dimension metrology, Electron beam lithography, Laser scattering, Lenses, Lithography, Modulation transfer functions, Maskless lithography

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