Dr. Suchit Bhattarai Profile

Dr. Suchit Bhattarai

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Publications (9)

Proceedings Article | 27 March 2017 Paper

Contrast curves for low energy electron exposures of an EUV resist in a scanning electron microscope

Suchit Bhattarai, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 10143, 101432C (2017) https://doi.org/10.1117/12.2259795

KEYWORDS: Scattering, Scanning electron microscopy, Extreme ultraviolet, Monte Carlo methods, Extreme ultraviolet lithography, Electron microscopes, Chemistry, Photoresist materials, Quantum efficiency, Spectroscopy, Energy efficiency, Solids, Ranging, Chemically amplified resists, Lithography

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Proceedings Article | 25 March 2016 Paper

Study of energy delivery and mean free path of low energy electrons in EUV resists

Suchit Bhattarai, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 9779, 97790B (2016) https://doi.org/10.1117/12.2220390

KEYWORDS: Electrons, Scattering, Extreme ultraviolet, Dielectrics, Spectroscopy, Electron microscopes, Absorption, Phonons, Data modeling, Reflectometry, Optical testing, Reflectance spectroscopy, Solids

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Proceedings Article | 6 April 2015 Paper

Simulation study of the influence of PEB reaction rates on resist LER

Suchit Bhattarai, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 9422, 94222I (2015) https://doi.org/10.1117/12.2087566

KEYWORDS: Line edge roughness, Calibration, Extreme ultraviolet, Quenching (fluorescence), Photons, Point spread functions, Stochastic processes, Data modeling, Systems modeling, Lithography

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Proceedings Article | 16 March 2015 Paper

Analysis of shot noise limitations due to absorption count in EUV resists

Suchit Bhattarai, Weilun Chao, Shaul Aloni, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 9422, 942209 (2015) https://doi.org/10.1117/12.2087303

KEYWORDS: Line edge roughness, Extreme ultraviolet, Absorption, Extreme ultraviolet lithography, Electron beam lithography, Plasmons, Lithography, Photons, Photomasks, Spectroscopy

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Proceedings Article | 28 July 2014 Paper

Extreme ultraviolet mask roughness: requirements, characterization, and modeling

Patrick Naulleau, Suchit Bhattaria, Rick Chao, Rene Claus, Kenneth Goldberg, Frank Goodwin, Eric Gullikson, Donggun Lee, Andy Neureuther, Jong-Ju Park

Proceedings Volume 9256, 92560J (2014) https://doi.org/10.1117/12.2070303

KEYWORDS: Photomasks, Extreme ultraviolet, Speckle, Line width roughness, Inspection, Atomic force microscopy, Lithography, Scattering, Scatter measurement, Line edge roughness

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Proceedings Article | 17 April 2014 Paper

Limitations of resist-based characterization of EUV mask surface roughness

Suchit Bhattarai, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 9048, 904837 (2014) https://doi.org/10.1117/12.2048249

KEYWORDS: Line edge roughness, Surface roughness, Photomasks, Extreme ultraviolet, Stochastic processes, Ranging, Semiconducting wafers, Coherence (optics), Image processing, Image quality

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Proceedings Article | 17 April 2014 Paper

Comparative analysis of shot noise in EUV and e-beam lithography

Suchit Bhattarai, Weilun Chao, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 9048, 90481H (2014) https://doi.org/10.1117/12.2048248

KEYWORDS: Extreme ultraviolet, Line edge roughness, Electron beam lithography, Extreme ultraviolet lithography, Point spread functions, Absorption, Binary data, Scattering, Lithography, Laser scattering

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Proceedings Article | 1 April 2013 Paper

Simulation analysis of LER and dose tradeoffs for EUV resists with photo-decomposable quenchers

Suchit Bhattarai, Andrew Neureuther, Patrick Naulleau

Proceedings Volume 8679, 867925 (2013) https://doi.org/10.1117/12.2012669

KEYWORDS: Line edge roughness, Diffusion, Quantum efficiency, Extreme ultraviolet, Photo decomposable quencher, Extreme ultraviolet lithography, Lithography, Stochastic processes, Printing, Line width roughness

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Proceedings Article | 23 March 2012 Paper

The SEMATECH Berkeley MET: demonstration of 15-nm half-pitch in chemically amplified EUV resist and sensitivity of EUV resists at 6.x-nm

Chris Anderson, Dominic Ashworth, Lorie Mae Baclea-An, Suchit Bhattari, Rikos Chao, Rene Claus, Paul Denham, Ken Goldberg, Andrew Grenville, Gideon Jones, Ryan Miyakawa, Ken Murayama, Hiroki Nakagawa, Senajith Rekawa, Jason Stowers, Patrick Naulleau

Proceedings Volume 8322, 832212 (2012) https://doi.org/10.1117/12.917386

KEYWORDS: Chemically amplified resists, Extreme ultraviolet, Mass attenuation coefficient, Optical lithography, Chemical elements, Extreme ultraviolet lithography, Phase shifts, Photomasks, Printing, Reticles

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Showing 5 of 9 publications

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