Blue Phosphorescent Organic Light-Emitting Didoe (PHOLED) is a sole solution for overcoming deficit electroluminescence efficiency (EL) of blue fluorescent OLEDs. However, low device lifetime of PHOLED has been a key issue that delays its commercial debut. In this work, we demonstrate the unprecedented device lifetime of blue PHOLED which is the longest device lifetime to our best knowledge. Platinum(II) complex-based PHOLED exhibits deep blue emission with Commission International de l’Eclairage (CIE) y-value less than 0.2. Newly designed tetradentate platinum (II) complex played a critical role on improving stability along with host materials which forms intermolecular charge-transfer(CT) complex. Addition of di-tert-butylbenzene to benzimidazole not only prohibits undesired CT complex between host and guest but also enhanced material stability by having high metal centered triplet state(3MC) in the Pt complex. The both host materials of hole transporting and electron transporting materials utilized tert-phenyl-silane as a bulky unit to enhance color purity of PHOLED and material stability of host materials.
The inspection of thin-film thickness on a wafer is one of the key steps for the semiconductor manufacturing processes. This paper proposes estimating the film thickness profile of the wafer, where the 3-band RGB color imaging camera and the hyperspectral imaging module are utilized to achieve the robust metrology performance. The simulation results are designed for investigating the characteristics of estimated film thickness profiles based on the Gaussian process regression. We demonstrate this cost-effective solution is beneficial for monitoring the CMP process with small computational power. The proposed measurement method has a great potential to solve bottlenecks from the physical metrology processes.
We present a comprehensive model to analyze, quantitatively, and predict the process of degradation of OLEDs considering polaron, exciton, exciton–polaron interactions, exciton–exciton interactions and a newly proposed impurity effect. The loss of efficiency during degradation is presented as a function of quencher density. The density and generation mechanisms of quenchers are extracted using a voltage rise model. The comprehensive model is applied to stable blue phosphorescent OLEDs, and the results show that the model describes the voltage rise and external quantum efficiency loss very well, and that the quenchers in emitting layer are mainly generated by polaron-induced degradation of dopants. Quencher formation was confirmed from a mass spectrometry. The polaron density per dopant molecule is reduced by controlling the emitter doping ratio, resulting in the highest reported LT50 of 431 hours at an initial brightness of 500 cd/m2 with CIEy<0.25 and high EQE>18%.
KEYWORDS: Data modeling, Semiconducting wafers, Metrology, Image processing, General packet radio service, Visual process modeling, Sensors, Chemical mechanical planarization, RGB color model
Measuring the thickness of thin films on a wafer is one of the most important steps for the semiconductor manufacturing process. This paper proposes a vision-based methodology for estimating a film thickness profile of the wafer. The scalability and industrial applicability of obtaining film thickness for the wafer with a small computational cost are demonstrated. Experimental results and numerical simulations are designed for investigating the characteristics of estimated solutions based on multiple representative nonlinear regression methods. The regression models are trained with the training data which consists of image value and thickness value pairs where the thickness value is obtained from the physical metrology system. There is an inevitable trade-off between the accuracy and the computational time in the spectrum-based film thickness measurement system in general, but the performance of the proposed methodology satisfied both the accuracy and the estimation time to a moderate extent.
Recently all-organic thermally activated delayed fluorescent (TADF) emitters have attracted great attention. In TADF emitters, nonemissive triplet states can be also harvested via population of emissive singlet states through reverse intersystem crossing (RISC). The RISC can be induced by the small energy gap between the lowest singlet (S1) and triplet (T1) states. Due to this ability of TADF, 100% internal quantum efficiency and high maximum external quantum efficiency (EQEmax) comparable to those of phosphorescent organic light emitting diodes (OLEDs) have been already reported in TADF OLEDs. In this study, we demonstrate high efficiency TADF OLEDs which are attributed to employing triazine acceptor type TADF compounds having high RISC rates(kRISC).
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